Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J11 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSST8 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J11 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Type Package Code Basic ordering unit (pieces) TT8J11 Taping TCR 3000 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Continuous Pulsed Continuous Drain current Source current (Body Diode) Pulsed Power dissipation Channel temperature Range of storage temperature VGSS ID IDP Is *1 Isp *1 PD *2 Tch Tstg Limits Unit 12 0 to 8 3.5 V V A 12 0.8 12 A A A 1.25 1 150 55 to 150 W / TOTAL W / ELEMENT C C ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Symbol * Rth (ch-a) Limits Unit 100 125 ˚C / W /TOTAL ˚C / W /ELEMENT * Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A Data Sheet TT8J11 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Gate-source leakage Symbol Gate threshold voltage Static drain-source on-state resistance Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 12 - - V ID=1mA, V GS=0V IDSS - - 10 A VDS=12V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=6V, ID=1mA - 31 43 - 43 60 - 60 90 - 80 160 IGSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Min. RDS (on)* ID=3.5A, VGS=4.5V m ID=1.7A, VGS=2.5V ID=1.7A, VGS=1.8V ID=0.7A, VGS=1.5V l Yfs l* 4 - - S ID=3.5A, VDS=6V Input capacitance Ciss - 2600 - pF VDS=6V Output capacitance Coss - 200 - pF VGS=0V Reverse transfer capacitance Crss - 190 - pF f=1MHz Turn-on delay time td(on)* - 15 - ns ID=1.7A, VDD 6V tr * - 30 - ns VGS=4.5V td(off)* - 170 - ns RL=3.5 tf * - 60 - ns RG=10 Total gate charge Qg * - 22 - nC ID=3.5A Gate-source charge Qgs * Gate-drain charge Qgd * - 3.9 3.1 - nC nC VDD 6V VGS=4.5V Forward transfer admittance Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=3.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A Data Sheet TT8J11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 3.5 3.5 Ta=25°C pulsed Ta=25°C pulsed 3 3 VGS=-4.5V 2.5 VGS=-4.5V Drain Current : -ID [A] Drain Current : -ID [A] 2.5 VGS=-4.0V 2 VGS=-2.8V 1.5 VGS=-1.8V VGS=-1.5V 1 VGS=-4.0V VGS=-2.8V VGS=-1.8V 2 VGS=-1.5V 1.5 1 0.5 VGS=-1.2V 0.5 VGS=-1.2V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 Ta=25°C pulsed VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 100 10 1 0.01 0.1 1 100 10 1 0.01 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=-2.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : -VDS [V] Drain-Source Voltage : -VDS [V] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 100 10 1 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 1 0.01 10 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VGS=-1.8V pulsed 0.1 1 10 Drain Current : -ID [A] 3/6 2011.05 - Rev.A Data Sheet TT8J11 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Drain Current 100 VGS=-1.5V pulsed VDS=-6V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [mΩ] 1000 100 10 1 0.01 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 10 0.1 Drain Current : -ID [A] 10 Drain Current : -ID [A] Fig.10 Source Current vs. Source-Drain Voltage Fig.9 Typical Transfer Characteristics 10 10 VGS=0V pulsed VDS=-6V pulsed Source Current : -Is [A] 1 Drain Currnt : -ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 Gate-Source Voltage : -VGS [V] 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] Fig.12 Switching Characteristics Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 1000 td(off) ID=-0.7A 150 ID=-3.5A tf 100 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed 100 tr 10 td(on) VDD≒-6V VGS=-4.5V RG=10Ω Ta=25°C Pulsed 50 1 0 0 2 4 6 0.01 8 Gate-Source Voltage : -VGS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 Drain Current :- ID [A] 4/6 2011.05 - Rev.A Data Sheet TT8J11 Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage 100000 5 4 10000 Capacitance : C [pF] Gate-Source Voltage : -VGS [V] Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=-6V ID=-3.5A Pulsed 3 2 Ciss 1000 Coss 100 1 0 0 5 10 15 20 10 25 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] Total Gate Charge : -Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Crss 5/6 2011.05 - Rev.A Data Sheet TT8J11 Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 50% 90% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ES protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A