CYSTEKEC BTA1300A3 Low vce(sat) pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/4
Low VCE(SAT) PNP Epitaxial Planar Transistor
BTA1300A3
Description
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier
applications.
Features
• High DC current gain and excellent hFE linearity.
HFE(1)=140—600(VCE=-1V,IC=-0.5A)
HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A)
• Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).
Symbol
BTA1300A3
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCES
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
-20
-20
-10
-6
-2
-5
750
150
-55~+150
V
V
V
V
A
mW
°C
°C
Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.
BTA1300A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-20
-10
-6
140
60
-
Typ.
120
140
50
Max.
-0.1
-0.1
-0.5
-1.5
600
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=-50uA
IC=-10mA
IE=-1mA
VCB=-20V
VEB=-6V
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-500mA
VCE=-1V, IC=-4A
VCE=-1V, IE=500mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTA1300A3
Y
140~280
GR
200~400
BL
300~600
CYStek Product Specification
Spec. No. : C816A3
Issued Date : 2003.04.15
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=40IB
Current Gain---HFE
Saturation Voltage---(mV)
VCE=1V
100
100
10
1
1
10
100
1000
1
10000
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
ON Voltage vs Collector Current
Power Derating Curve
1000
Power Dissipation---PD(mW)
ON Voltage---(mV)
800
VBE(ON)@VCE=1V
100
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
Collector Current IC---(mA)
BTA1300A3
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
A1300
3
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1300A3
CYStek Product Specification
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