ON NTA7002N Small signal mosfet 30 v, 154 ma, single, n−channel, gate esd protection, sc−75 Datasheet

NTA7002N
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−75
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Features
•
•
•
•
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
Pb−Free Package is Available
RDS(on)
Typ @ VGS
V(BR)DSS
ID MAX
(Note 1)
1.4 W @ 4.5 V
30 V
154 mA
2.3 W @ 2.5 V
Applications
3
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
1
Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDSS
30
V
Gate−to−Source Voltage
VGS
"10
V
Continuous Drain
Current (Note 1)
Steady State = 25°C
ID
154
mA
Power Dissipation
(Note 1)
Steady State = 25°C
PD
300
mW
N−Channel
PIN CONNECTIONS
SC−75 (3−Leads)
Gate
1
3
Pulsed Drain Current
tP v 10 ms
IDM
618
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
ISD
154
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Junction−to−Ambient – Steady State (Note 1)
2
(Top View)
MARKING DIAGRAM
3
3
THERMAL RESISTANCE RATINGS
Parameter
Source
Drain
2
Symbol
Max
Unit
RqJA
416
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
T6 MG
SC−75 / SOT−416
G
CASE 463
1
2
STYLE 5
T6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
Device
NTA7002NT1
NTA7002NT1G
Package
Shipping†
SC−75
3000 Tape & Reel
SC−75
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 1
1
Publication Order Number:
NTA7002N/D
NTA7002N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V,
T = 85 °C
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±25
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
±1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
T = 85 °C
±1.0
mA
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 100 mA
1.0
1.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 154 mA
1.4
7.0
VGS = 2.5 V, ID = 154 mA
2.3
7.5
VDS = 3 V, ID = 154 mA
80
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 2)
Forward Transconductance
gFS
0.5
W
mS
CAPACITANCES
Input Capacitance
CISS
11.5
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
Output Capacitance
COSS
10
Reverse Transfer Capacitance
CRSS
3.5
td(ON)
13
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
tf
ns
15
98
ns
60
Drain−Source Diode Characteristics
Forward Diode Voltage
VSD
VGS = 0 V, IS = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
0.77
0.9
V
NTA7002N
TYPICAL PERFORMANCE CURVES
VGS = 10 V
5V
2.8 V
2.4 V
0.18
0.16
0.14
0.2
TJ = 25°C
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
0.2
2V
0.12
0.1
0.08
0.06
0.04
0.02
1.4 V
0
1.2 V
0
0.4
0.8
1.6
1.2
0.16
0.12
0.08
TJ = 125°C
0.04
TJ = 25°C
TJ = −55°C
0
0.6
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
2.5
VGS = 4.5 V
TJ = 125°C
2
1.5
TJ = 25°C
1
TJ = −55°C
0.5
0
0.1
0.15
0.05
ID, DRAIN CURRENT (AMPS)
0.2
2.5
TJ = 25°C
1.5
VGS = 4.5 V
1
0.5
0
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1000
ID = 0.15 A
VGS = 4.5 V
VGS = 0 V
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
2
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
0.8
1
1.2
1.4
1.6
1.8
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.4
1.2
1
0.8
0.6
100
TJ = 150°C
10
TJ = 125°C
0.4
0.2
0
−50
1
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTA7002N
TYPICAL PERFORMANCE CURVES
20
Ciss
1000
TJ = 25°C
VDD = 5.0 V
ID = 75 mA
VGS = 4.5 V
Crss
t, TIME (ns)
C, CAPACITANCE (pF)
25
15
10
Ciss
tr
td(on)
10
Coss
5
0
10
td(off)
tf
100
VDS = 0 V
5
VGS = 0 V
0
VGS
Crss
5
10
15
1
20
1
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
10
RG, GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
IS, SOURCE CURRENT (AMPS)
0.16
0.14
VGS = 0 V
TJ = 25°C
0.12
0.1
0.08
0.06
0.04
0.02
0
0.5
0.65
0.55
0.6
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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4
0.8
100
NTA7002N
PACKAGE DIMENSIONS
SC−75 / SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
NOM
0.031
0.002
0.008
0.006
0.063
0.031
0.04 BSC
0.004 0.006
0.061 0.063
MIN
0.027
0.000
0.006
0.004
0.059
0.027
MAX
0.035
0.004
0.012
0.010
0.067
0.035
0.008
0.065
NTA7002N
ON Semiconductor and
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