Plastic-Encapsulate Transistors FEATURES MMBTA56 Epitaxial planar die construction. (PNP) Complementary NPN types available Marking:2GM MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current -Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 arameter 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Max Unit ollector-base breakdown voltage VCBO IC=-100μA,IE=0 -80 V Collector-emitter breakdown voltage VCEO IC=-1.0mA,IB=0 -80 V Emitter-base breakdown voltage VEBO IE=-100μA,IC=0 -4 collector cut-off current ICBO IE = 0; VCB = -80V -0.1 μA collector cut-off current ICEO IB= 0; VCB = -80V -0.1 μA DC current gain hFE V VCE = -1V;IC = -10mA 100 - VCE = -1V;IC = -100mA 100 - collector-emitter saturation voltage VCE(sat) IC = -100mA; IB = -10mA -0.25 V base-emitter saturation voltage VBE(sat) IC = -100mA; VCE = -1.0V -1.2 V fT IC = -100mA; VCE = -1V; Transition frequency 50 MHz f = 100MHz GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors MMBTA56 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2