NTE NTE2558 Silicon npn transistor darlington, high voltage, high speed switch w/ damper diode Datasheet

NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w/ Damper Diode
Features:
D High Reliability
D High Collector–Base Breakdown Voltage
D On–Chip Damper Diode
Applications:
D High–Voltage, High–Power Switching
D Induction Cookers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
600
mA
DC Current Gain
hFE
VCE = 5V, IC = 15A
25
–
–
800
–
–
V
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 15A, IB = 0.75A
–
–
3.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 15A, IB = 0.75A
–
–
2.5
V
150
0
–
–
V
IEC = 15A
–
–
2.0
V
IC = 15A, IB1 = 1A,
IB2 = –5A, VCC = 200V,
RL = 13.3Ω
–
–
2.0
µs
Collector–Base Breakdown Voltage
Diode Forward Voltage
Fall Time
V(BR)CBO IC = 5mA, IE = 0
VF
tf
Schematic Diagram
C
B
E
.810(20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
B
C
E
Note: Collector connected to heat sink.
.023
(0.6)
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