Infineon IKI04N60T Low loss duopack : igbt in trenchstop and fieldstop technology Datasheet

IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5μs
• Designed for :
- Frequency Converters
- Drives
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
PG-TO-220-3-1
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
PG-TO-262-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IKP04N60T
600 V
4A
1.5 V
175 °C
K04T60
PG-TO-220-3-1
IKI04N60T
600 V
4A
1.5 V
175 °C
K04T60
PG-TO-262-3
Type
E
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
Pulsed collector current, tp limited by Tjmax
ICpuls
12
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
-
12
Diode forward current, limited by Tjmax
IF
600
Unit
V
A
8
4
TC = 25°C
8
TC = 100°C
4
Diode pulsed current, tp limited by Tjmax
IFpuls
12
Gate-emitter voltage
VGE
±20
V
tSC
5
μs
Power dissipation TC = 25°C
Ptot
42
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Short circuit withstand time
2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
1
2)
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.5 Feb. 09
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
3.5
K/W
RthJCD
5
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j = 25° C
-
1.5
2.05
T j = 17 5° C
-
1.9
-
T j = 25° C
-
1.65
2.05
T j = 17 5° C
-
1.6
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V, I C = 0. 2mA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15V, I C = 4A
V G E = 0V, I F = 4A
Gate-emitter threshold voltage
VGE(th)
I C = 60µA,V C E =V G E
Zero gate voltage collector current
ICES
V C E = 600V ,
V G E = 0V
µA
T j = 25° C
-
-
40
T j = 17 5° C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0V ,V G E = 2 0V
-
-
100
Transconductance
gfs
V C E = 20V, I C = 4A
-
2.2
-
Integrated gate resistor
RGint
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25V,
-
252
-
Output capacitance
Coss
V G E = 0V,
-
20
-
Reverse transfer capacitance
Crss
f= 1 M Hz
-
7.5
-
Gate charge
QGate
V C C = 4 80V, I C = 4A
-
27
-
nC
Internal emitter inductance
LE
-
7
-
nH
-
36
-
A
pF
V G E = 1 5V
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
IC(SC)
V G E = 1 5V,t S C ≤5μs
V C C = 400V,
T j ≤ 150° C
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.5 Feb. 09
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
84
-
Ets
T j = 25° C,
V C C = 4 00V, I C = 4A ,
V G E = 0/ 1 5V ,
R G = 47 Ω,
L σ 1 ) = 150nH,
C σ 1 ) =47pF
Energy losses include
“tail” and diode
reverse recovery.
-
145
-
Diode reverse recovery time
trr
T j = 25° C,
-
28
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00V, I F = 4A,
-
79
-
nC
Diode peak reverse recovery current
Irrm
di F / dt = 61 0A / μs
Diode peak rate of fall of reverse
recovery current during t b
di r r / d t
-
7
-
-
164
-
-
43
-
-
61
-
µJ
Anti-Parallel Diode Characteristic
-
5.3
-
A
-
346
-
A/μs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
-
10
-
-
185
-
-
83
-
-
99
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
97
-
Ets
T j = 17 5° C,
V C C = 4 00V, I C = 4A ,
V G E = 0/ 1 5V ,
R G = 47 Ω
L σ 1 ) = 150nH,
C σ 1 ) =47pF
Energy losses include
“tail” and diode
reverse recovery.
-
196
-
Diode reverse recovery time
trr
T j = 17 5° C
-
95
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00V, I F = 4A,
-
291
-
nC
Diode peak reverse recovery current
Irrm
di F / dt = 61 0A / μs
-
6.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
di r r / d t
-
253
-
A/μs
µJ
Anti-Parallel Diode Characteristic
1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
T C =80°C
8A
T C =110°C
6A
4A
Ic
2A
0A
10H z
100H z
1kH z
10kH z
50µs
DC
10V
100V
1ms
10ms
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
8A
IC, COLLECTOR CURRENT
POWER DISSIPATION
1A
1V
100kH z
40W
Ptot,
10µs
0.1A
Ic
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 47Ω)
30W
20W
10W
0W
25°C
tp=2µs
10A
12A
50°C
75°C
4A
2A
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
6A
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
8A
10A
V GE =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
15V
13V
6A
11V
9V
4A
7V
2A
13V
6A
11V
9V
4A
7V
0A
0V
1V
2V
3V
0V
8A
6A
4A
2A
T J = 1 7 5 °C
2 5 °C
0V
2V
4V
6V
8V
2V
3V
2.5V
IC =8A
2.0V
1.5V
IC =4A
1.0V
IC =2A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
15V
2A
0A
0A
V GE =20V
8A
5
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
t d(off)
100ns
tf
t d(on)
10ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tr
100ns
tf
t d(on)
10ns
tr
1ns
0A
2A
4A
6A
50Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
100Ω
150Ω
200Ω
250Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
t d(off)
100ns
t, SWITCHING TIMES
tf
t d(on)
10ns
tr
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG=47Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
6
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
*) E on and E ts include losses
*) E on and E ts include losses
E, SWITCHING ENERGY LOSSES
E ts *
0.3m J
E off
0.2m J
E on *
0.1m J
0.0m J
0A
2A
4A
E, SWITCHING ENERGY LOSSES
due to diode recovery
du e to diode recovery
0.4 mJ
E ts*
0.3 mJ
E off
0.2 mJ
E on*
0.1 mJ
0.0 mJ
25Ω 50Ω
6A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
E ts *
100µJ
E off
75µJ
50µJ
E on*
25µJ
0µJ
25°C
50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
200Ω
250Ω
*) E on and E ts include losses
due to diode recovery
150µJ
125µJ
150Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
175µJ
100Ω
due to diode recovery
0.25m J
0.20m J
0.15m J
E ts *
0.10m J E off
0.05m J
E on *
0.00m J
300V
350V
400V
450V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
1 5V
12 0V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
48 0V
1 0V
100pF
C oss
5V
10pF
C rss
0V
0nC
5 nC
0V
10 nC 15 nC 2 0n C 2 5n C 3 0nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=4 A)
10V 20V 30V 40V 50V 60V 70V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
60A
50A
40A
30A
20A
tSC,
IC(sc), short circuit COLLECTOR CURRENT
12µs
10A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0
10 K/W
0.2
R,(K/W)
0.38216
0.68326
1.49884
0.93550
0.1
0.05
-1
10 K/W
τ, (s)
-2
5.16*10
-3
7.818*10
-4
9*10
-4
1.134*10
R1
0.02
0.01
R2
C1=τ1/R1
C2=τ2/R2
single pulse
1µs
10µs
100µs
1ms
0.2
0
10 K/W
R,(K/W)
0.29183
0.79081
1.86970
2.04756
0.1
0.05
-1
10 K/W
R1
0.02
10µs 100µs
160ns
120ns
80ns
TJ=25°C
40ns
Qrr, REVERSE RECOVERY CHARGE
TJ=175°C
R2
C1=τ1/R1
C2=τ2/R2
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
0.35µC
200ns
6
single pulse
1µs
280ns
240ns
τ, (s)
-2
7.018*10
-2
1.114*10
-3
1.236*10
-4
2.101*10
0.01
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
trr, REVERSE RECOVERY TIME
D=0.5
T J =175°C
0.30µC
0.25µC
0.20µC
T J =25°C
0.15µC
0.10µC
0.05µC
0.00µC
0ns
400A/µs
400A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
Rev. 2.5 Feb. 09
TrenchStop® Series
T J =175°C
T J=175°C
8A
6A
T J =25°C
4A
2A
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr,
REVERSE RECOVERY CURRENT
10A
400A/µs
T J=25°C
-200A/µs
-100A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
400A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
10A
I F =8A
2.0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
-300A/µs
0A/µs
0A
8A
6A
T J =25°C
4A
175°C
4A
1.5V
2A
1.0V
0.5V
2A
0A
IKP04N60T
pIJIKI04N60Tdsadsa
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
Power Semiconductors
10
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 2.5 Feb. 09
TrenchStop® Series
PG-TO-220-3-1
Power Semiconductors
11
IKP04N60T
pIJIKI04N60Tdsadsa
Rev. 2.5 Feb. 09
TrenchStop® Series
Power Semiconductors
12
IKP04N60T
pIJIKI04N60Tdsadsa
Rev. 2.5 Feb. 09
IKP04N60T
pIJIKI04N60Tdsadsa
TrenchStop® Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity C σ =40pF.
Figure B. Definition of switching losses
Power Semiconductors
13
Rev. 2.5 Feb. 09
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2/16/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.5 Feb. 09
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