IXYS IXFN36N100 Hiperfet power mosfets single die mosfet Datasheet

HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 36N100
VDSS
ID25
RDS(on)
= 1000V
=
36A
Ω
= 0.24Ω
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
G
S
Symbol
Test Conditions
S
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C, Chip capability
36
A
IDM
TC = 25°C, pulse width limited by TJM
IAR
A
TC = 25°C
36
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
5
V/ns
700
W
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
Weight
Symbol
Test Conditions
VGS = 0 V, ID = 3 mA
1000
VGH(th)
V DS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
© 2001 IXYS All rights reserved
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
TJ = 25°C
TJ = 125°C
S
G
144
dv/dt
miniBLOC, SOT-227 B (IXFN)
E153432
V
5.0
V
±200
nA
100
2
µA
mA
0.24
Ω
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
• Easy to mount
•
•
Space savings
High power density
98520C (02/01)
IXFN 36N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 15 V; ID = 0.5 • ID25, pulse test
18
40
S
9200
pF
1200
pF
Crss
300
pF
td(on)
41
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
= 1 Ω (External),
ns
ns
30
ns
Qg(on)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
380
nC
65
nC
185
nC
RthJC
0.18
K/W
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 VTJ = 25°C
TJ =125°C
TJ = 25°C
QRM
IRM
K/W
0.05
RthCK
Source-Drain Diode
M4 screws (4x) supplied
Dim.
tf
Qgs
55
110
miniBLOC, SOT-227 B
36
A
144
A
1.3
V
180
330
2
8
ns
ns
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN 36N100
50
80
VGS =10V
9V
8V
7V
ID - Amperes
60
TJ = 125OC VGS =10V
9V
8V
7V
6V
40
ID - Amperes
TJ = 25OC
40
6V
20
6V
30
20
5V
10
5V
0
0
0
4
8
12
16
0
20
5
10
15
20
25
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
2.2
VGS = 10V
VGS = 10V
2.2
RDS(ON) - Normalized
RDS(ON) - Normalized
2.0
TJ = 125OC
1.8
1.6
1.4
1.2
O
TJ = 25 C
1.9
ID = 36A
1.6
ID =18A
1.3
1.0
1.0
25
0.8
0
10
20
30
40
50
50
75
RDS(on) normalized to 0.5 ID25 value
vs. ID
40
50
32
40
24
16
8
30
TJ = 125oC
20
TJ = 25oC
10
0
-50
-25
0
25
50
75
100 125 150
T C - Degrees C
Figure 5. Drain Current vs. Case Temperature
© 2001 IXYS All rights reserved
150
RDS(on) normalized to 0.5 ID25
value vs. TJ
Figure 4.
ID - Amperes
ID - Amperes
125
T J - Degrees C
ID - Amperes
Figure 3.
100
0
3.5
4.0
4.5
5.0
5.5
6.0
VGS - Volts
Figure 6. Admittance Curves
6.5
7.0
IXFN 36N100
12
30000
VDS = 500 V
ID = 18 A
IG = 10 mA
8
Ciss
10000
Capacitance - pF
VGS - Volts
10
6
4
f = 100kHz
Coss
1000
Crss
2
100
0
0
100
200
300
400
500
0
600
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Figure 8. Capacitance Curves
Figure 7. Gate Charge
100
ID - Amperes
80
60
TJ = 125OC
40
TJ = 25OC
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
R(th)JC - K/W
1.000
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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