ROHM RV1C002UN

RV1C002UN
RV1C002UN
Datasheet
Nch 20V 150mA Small Signal MOSFET
lOutline
VDSS
20V
RDS(on) (Max.)
2.0W
ID
150mA
PD
100mW
lFeatures
(3)
VML0806
(2)
(1)
lInner circuit
1) The world smallest Package (0806size).
(1) Source
(2) Gate
(3) Drain
2) Low voltage drive(1.2V) makes this
device ideal for partable equipment.
3) Drive circuits can be simple.
*1 BODY DIODE
*2 ESD PROTECTION DIODE
4) Built-in G-S Protection Diode.
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
180
Tape width (mm)
Switching
8
Type
Basic ordering unit (pcs)
8,000
Taping code
T2CL
Marking
RY
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
20
V
Continuous drain current
ID *1
150
mA
ID,pulse *2
600
mA
Gate - Source voltage
VGSS
8
V
Power dissipation
PD *3
100
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
1250
°C/W
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = 1mA
20
-
-
V
Zero gate voltage drain current
IDSS
VDS = 20V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 8V, VDS = 0V
-
-
10
mA
VDS = 10V, ID = 100mA
0.3
-
1.0
V
VGS=4.5V, ID=150mA
-
1.4
2.0
VGS=2.5V, ID=150mA
-
1.7
2.6
VGS=1.8V, ID=150mA
-
2.2
3.4
VGS=1.5V, ID=20mA
-
2.7
5.4
VGS=1.2V, ID=10mA
-
3.8
11.4
VGS=4.5V, ID=150mA, Tj=125°C
-
2.3
4.6
110
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
VGS (th)
RDS(on) *4
gfs *4
VDS=10V, ID=150mA
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
12
-
Output capacitance
Coss
VDS = 10V
-
5
-
Reverse transfer capacitance
Crss
f = 1MHz
-
3
-
VDD ⋍ 10V, VGS = 4.5V
-
3
-
tr *4
ID =75mA
-
4
-
td(off) *4
RL = 133W
-
12
-
tf *4
RG = 10W
-
25
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
*4
Conditions
Unit
Min.
Typ.
Max.
-
-
80
mA
-
-
600
mA
-
-
1.2
V
Ta = 25°C
VGS = 0V, Is = 150mA
3/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0
0.8
0.6
0.4
0.2
0
0
50
100
150
200
-25
Junction Temperature : Tj [°C]
25
50
75
100
125
150
Junction Temperature : Tj [°C]
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
0.15
0.15
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V
0.1
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V
Ta=25ºC
Pulsed
Drain Current : ID [A]
Drain Current : ID [A]
0
VGS=1.2V
0.05
VGS=1.2V
0.1
0.05
VGS=1.0V
VGS=1.0V
Ta=25ºC
Pulsed
0
0
0
0.2
0.4
0.6
0.8
1
0
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Drain - Source Voltage : VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
1
50
VDS= 10V
VGS = 0V
ID = 1mA
Pulsed
45
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
40
35
30
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
25
20
0.001
-50
0
50
100
150
0
1
1.5
2
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
10
2.0
VDS= 10V
VDS = 10V
ID = 1mA
Pulsed
1.8
1.6
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
0.5
1.4
1.2
1.0
0.8
0.6
0.4
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.2
0.0
-50
0
50
100
0.01
0.01
150
Junction Temperature : Tj [°C]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
0.1
1
Drain Current : ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
100
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
10
Ta=25ºC
9
8
ID= 10mA
7
ID= 150mA
6
5
4
3
2
1
0
0
2
4
6
8
Ta=25ºC
1
0
0.001
Gate - Source Voltage : VGS [V]
0.1
1
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(II)
100
VGS = 10V
ID = 150mA
Pulsed
3
2
1
0
-50 -25
0
25
50
75
100 125 150
Static Drain - Source On-State Resistance
: RDS(on) [W]
5
Static Drain - Source On-State Resistance
: RDS(on) [W]
0.01
Drain Current : ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
4
VGS= 1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
10
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.01
0.1
1
Drain Current : ID [A]
Junction Temperature : Tj [ºC]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
VGS = 4.5V
6/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristic curves
Fig.13 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
100
VGS = 2.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
1
0.1
0.01
0.1
1
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
100
VGS = 1.8V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
1
0.1
0.01
0.1
Drain Current : ID [A]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(VI)
Static Drain - Source On-State Resistance
: RDS(on) [W]
100
VGS = 1.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.001
0.01
0.1
1
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(V)
10
100
VGS = 1.2V
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.001
0.01
0.1
1
Drain Current : ID [A]
Drain Current : ID [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1
7/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lElectrical characteristic curves
Fig.18 Switching Characteristics
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
100
1000
Ta=25ºC
VDD= 10V
VGS= 4.5V
RG=10W
10
Ciss
Coss
Switching Time : t [ns]
Capacitance : C [pF]
Ta=25ºC
f=1MHz
VGS=0V
100
tf
td(off)
10
Crss
tr
1
1
0.01
0.1
1
10
0.01
100
td(on)
0.1
1
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.19 Source Current
vs. Source Drain Voltage
1
Source Current : IS [A]
VGS=0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.001
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
lNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
9/10
2012.08 - Rev.A
Data Sheet
RV1C002UN
lDimensions (Unit : mm)
b1
D
E
e1
L
VML0806
L
b
e
l1
A1
l2
A
l1
b3
b2
Patterm of terminal position areas
DIM
A
A1
b
b1
D
E
e
e1
L
DIM
b2
b3
l1
l2
MILIMETERS
MIN
MAX
0.33
0.39
0.00
0.05
0.10
0.20
0.45
0.55
0.55
0.65
0.75
0.85
0.35
0.50
0.15
0.25
MILIMETERS
MIN
MAX
0.25
0.70
0.30
0.90
INCHES
MIN
0.013
0.000
0.004
0.018
0.022
0.030
MAX
0.015
0.002
0.008
0.022
0.026
0.033
0.014
0.020
0.006
0.010
INCHES
MIN
-
MAX
0.010
0.028
0.012
0.035
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1120A