Fairchild FQU5N60CTU N-channel qfet mosfet 600 v, 2.8 a, 2.5 ohm Datasheet

FQD5N60C / FQU5N60C
N-Channel QFET MOSFET
600 V, 2.8 A, 2.5 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
• 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V,
ID = 1.4 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS compliant
D
!
D
●
G
S
D-PAK
FQD Series
G D S
G!
I-PAK
◀
▲
●
●
FQU Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD5N60C / FQU5N60C
600
Unit
V
2.8
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
1.8
A
11.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
IAR
Avalanche Current
(Note 1)
2.8
A
EAR
(Note 1)
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
4.9
4.5
2.5
mJ
V/ns
W
PD
Power Dissipation (TC = 25°C)
49
0.39
-55 to +150
W
W/°C
°C
300
°C
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
Max
2.56
Unit
°C/W
-
50
°C/W
-
110
°C/W
Typ
-
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
IDSS
IGSSF
IGSSR
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
2.0
2.5
Ω
--
4.7
--
S
--
515
670
pF
--
55
72
pF
--
6.5
8.5
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.4 A
gFS
Forward Transconductance
VDS = 40 V, ID = 1.4 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4, 5)
--
10
30
ns
--
42
90
ns
--
38
85
ns
--
46
100
ns
--
15
19
nC
--
2.5
--
nC
--
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
--
--
11.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 2.8 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
ns
Qrr
Reverse Recovery Charge
--
2.2
--
µC
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Electrical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
0
10
1
10
ID, Drain Current [A]
1
10
-1
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
10
-2
10
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
1
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
5
VGS = 10V
4
3
2
VGS = 20V
1
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
0
2
4
6
8
10
10
0.2
0.4
0.6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
Coss
400
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
VGS, Gate-Source Voltage [V]
Ciss
VDS = 120V
10
800
Capacitance [pF]
0.8
VSD, Source-Drain voltage [V]
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 4.5A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
0
4
8
12
16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 1.4 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
1
10
10 µs
2.0
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1 ms
10 ms
100 ms
DC
0
10
1.5
1.0
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.5
-2
10
0
10
1
2
10
0.0
25
3
10
10
50
75
100
125
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10
150
※ N o te s :
1 . Z θ J C ( t) = 2 .5 6 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0
0 .2
PDM
0 .1
0 .0 5
t1
t2
10
-1
0 .0 2
0 .0 1
Z
θ JC
( t), T h e r m a l R e s p o n s e
VDS, Drain-Source Voltage [V]
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Typical Characteristics
FQD5N60C / FQU5N60C N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Mechanical Dimensions
D - PAK
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com
FQD5N60C / FQU5N60C N-Channel MOSFET
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