Central CBRHDSH1-90 Surface mount high density 1 amp silicon schottky bridge rectifier Datasheet

CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
FEATURES:
HD DIP CASE
• Low Leakage Current (40nA TYP @ VRRM)
• Low Forward Voltage Drop Schottky Diodes
• High 1.0A Current Rating
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
100
100
V
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
UNITS
V
VR(RMS)
IO
71
V
1.0
A
IFSM
PD
20
A
1.2
W
-50 to +125
°C
-55 to +150
°C
85
°C/W
TJ
Tstg
ΘJA
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
VR=100V
0.04
10
IR
IR
BVR
VF
VF
CJ
VR=100V, TA=50°C
VR=100V, TA=100°C
IR=150μA
UNITS
μA
1.0
mA
20
mA
100
V
IF=500mA
IF=1.0A
615
700
mV
690
750
mV
VR=4.0V, f=1.0MHz
230
pF
R6 (22-May 2012)
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH110
R6 (22-May 2012)
w w w. c e n t r a l s e m i . c o m
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (22-May 2012)
w w w. c e n t r a l s e m i . c o m
Similar pages