AOSMD AO4616 30v complementary mosfet Datasheet

AO4616
30V Complementary MOSFET
General Description
Product Summary
The AO4616 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
N-Channel
VDS= 30V
P-Channel
-30V
ID= 8A (VGS=10V)
-7A (VGS=-10V)
RDS(ON)
RDS(ON)
< 20mΩ (VGS=10V)
< 22mΩ (VGS=-10V)
< 28mΩ (VGS=4.5V)
< 40mΩ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S1
S2
n-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
ID
TA=70°C
p-channel
Max p-channel
-30
Units
V
±20
±20
V
8
-7
A
6.5
-6
IDM
40
-40
Avalanche Current C
IAS, IAR
19
27
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
18
36
mJ
Pulsed Drain Current
Power Dissipation B
C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 2: Jan. 2011
Steady-State
Steady-State
2
1.3
TJ, TSTG
Symbol
t ≤ 10s
2
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 9
AO4616
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
V
Gate-Body leakage current
VDS=0V, VGS=±16V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=6A
10
µA
1.8
2.4
V
16.5
20
23
28
19.5
28
mΩ
1
V
2.5
A
A
gFS
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
IGSS
Coss
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
600
740
888
pF
VGS=0V, VDS=15V, f=1MHz
77
110
145
pF
50
82
115
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
VGS=10V, VDS=15V, ID=8A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
Turn-Off Fall Time
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
www.aosmd.com
Page 2 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
VDS=5V
4V
25
25
3.5V
10V
20
3V
ID(A)
ID (A)
20
15
15
10
10
125°C
5
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
30
25
RDS(ON) (mΩ )
2
VGS=4.5V
20
15
VGS=10V
10
VGS=4.5V
ID=6A
1.4
1.2
VGS=10V
ID=8A
1
17
5
2
10
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
40
25
50
1.0E+02
ID=8A
1.0E+01
35
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
30
25
25°C
1.0E-01
125°C
1.0E-02
25°C
20
1.0E-03
15
1.0E-04
10
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
800
600
400
Coss
2
200
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
100.0
Crss
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
10s
DC
0.0
0.01
Power (W)
ID (Amps)
10.0
10
100
1
0.00001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
Rev 2: Jan. 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Jan. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 9
AO4616
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7A
RDS(ON)
-1.4
Forward Transconductance
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
µA
100
nA
-2.0
-2.5
V
17.5
22
24.5
33
27.5
40
-40
VGS=-4.5V, ID=-3.5A
VDS=-5V, ID=-7A
IS=-1A,VGS=0V
gFS
Units
-5
TJ=125°C
Static Drain-Source On-Resistance
Max
-1
TJ=55°C
VSD
Coss
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
mΩ
mΩ
24
-0.75
S
-1
V
-2.5
A
830
1040
1250
pF
125
180
235
pF
75
125
175
pF
2
4
6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
19
23
nC
Qg(4.5V) Total Gate Charge
7.5
9.6
12
nC
VGS=10V, VDS=-15V, ID=-7A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
3.6
nC
4.6
nC
10
ns
VGS=10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
5.5
ns
26
ns
IF=-7A, dI/dt=500A/µs
11.5
15
25
32.5
9
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
www.aosmd.com
Page 6 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
60
-10V
VDS=-5V
-7V
-5V
50
30
40
-ID(A)
-ID (A)
-4.5V
30
20
125°C
20
-3.5V
10
25°C
10
VGS=-3V
0
0
0
1
2
3
4
0
5
1
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
Normalized On-Resistance
1.6
35
RDS(ON) (mΩ )
2
VGS=-4.5V
30
25
VGS=-10V
20
15
10
VGS=-10V
ID=-7A
1.4
17
5
2
VGS=-4.5V
10
I =-3.5A
1.2
1
D
0.8
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
60
ID=-7A
1.0E+01
50
40
125°C
40
-IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
30
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
20
1.0E-04
10
1.0E-05
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=-15V
ID=-7A
1400
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
800
600
Coss
400
2
200
Crss
0
0
0
5
15
Qg 10
(nC)
Figure 7: Gate-Charge Characteristics
0
20
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
10s
DC
0.0
0.01
Power (W)
-ID (Amps)
10.0
10
100
1
0.00001
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jan. 2011
www.aosmd.com
Page 8 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2: Jan. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 9 of 9
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