DSK ERA12-04 Plastic silicon rectifier Datasheet

Diode Semiconductor Korea ERB12-01---ERB12-10
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERB12
-01
ERB12
-02
ERA12
-04
ERB12
-06
ERB12
-10
UNITS
Maximum recurrent peak reverse voltage
V RRM
100
200
400
600
1000
V
Maximum RMS voltage
V RMS
70
140
280
420
700
V
Maximum DC blocking voltage
VDC
100
200
400
600
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.0
A
IFSM
60.0
A
VF
1.1
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
IR
5.0
50.0
Typical junction capacitance
(Note1)
CJ
15
Typical thermal resistance
(Note2)
RθJA
50
TJ
- 55---- + 150
TSTG
- 55 ---- +150
Operating junction temperature range
Storage temperature range
A
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
ERB12-01---ERB12-10
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
100
100
10
JUNCTION CAPACITANCE,pF
TJ=25
Pulse Width=300uS
4
2
1. 0
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
0. 4
0. 1
0 .04
0 . 01
0. 6
0. 8 1. 0
1. 2
1. 4
1. 6 1. 8
60
40
20
10
4
2
1
0.1
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
.4
1.0
2
10
100
REVERSE VOLTAGE,VOLTS
FIG.4 -- FORWARD DERATING CURVE
1.0
70
TJ=125
8.3ms Single Half
Sine-Wave
60
50
40
30
20
10
0
1
4
10
NUMBER OF CYCLES AT 60Hz
100
AVERAGE FORWARD CURRENT
AMPERES
80
AMPERES
.2
2.0
FIG.3 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
TJ=25
f=1MHz
.8
.6
.4
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
.2
0
25
50
75
100
125
150
175
200
AMBIENNT TEMPERATURE,
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