BAS21SLT1G, NSVBAS21SLT1G Dual Series High Voltage Switching Diode Features www.onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 • • ESD Rating − Machine Model: Class B These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 3 CATHODE/ANODE 3 1 MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Peak Forward Surge Current CATHODE 2 ANODE 1 2 Symbol Value Unit VR 250 Vdc VRRM 250 Vdc IF 225 mAdc IFM(surge) 625 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C °C/W SOT−23 CASE 318 STYLE 11 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RJA 417 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2000 October, 2016 − Rev. 7 1 JT M G G 1 JT = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS21SLT1G SOT−23 3000 / Tape & Reel (Pb−Free) NSVBAS21SLT1G SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS21SLT1/D BAS21SLT1G, NSVBAS21SLT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit − − 0.1 100 250 − − − 1000 1250 OFF CHARACTERISTICS IR Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR iR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TA = −55°C 1000 25°C 800 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 1200 155°C 600 400 200 1 1 10 100 1000 7000 6000 5000 TA = 155°C 4000 3000 6 5 4 3 2 1 0 TA = 25°C TA = −55°C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage www.onsemi.com 2 100 200 300 BAS21SLT1G, NSVBAS21SLT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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