NEC NESG3031M05 Necs npn sige high frequency tran sis tor Datasheet

PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG3031M05
HIGH FREQUENCY TRANSISTOR
FEATURES
•
LOW NOISE FIGURE AND HIGH-GAIN
NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
•
MAXIMUM STABLE POWER GAIN:
MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
•
SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
•
M05 PACKAGE:
Flat-lead 4 pin thin-type super minimold package
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG3031M05
50 pcs (Non reel)
• 8 mm wide embossed taping
NESG3031M05-T1
3 kpcs/reel
• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
Ptot Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
California Eastern Laboratories
NESG3031M05
ELECTRICAL CHARACHTERISTICS (TA = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
|S21e|2
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
6.0
8.5
−
dB
NF
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
−
0.95
−
dB
DC Current Gain
hFE
Note 1
RF Characteristics
Insertion Power Gain
Noise Figure (1)
ZS = ZSopt, ZL = ZLopt
Noise Figure (2)
NF
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
−
1.1
1.5
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
10.0
−
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5
−
dB
−
0.15
0.25
pF
dB
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
Cre Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
11.0
14.0
−
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
13.0
−
dBm
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
18.0
−
dBm
Note 3
MSG
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
RANK
FB
Marking
T1K
hFE Value
220 to 380
NESG3031M05
PACKAGE DIMENSIONS (Units in mm)
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD (M05, 2012 PACKAGE
2.05±0.1
2
0.59±0.05
0.11+0.1
-0.05
1
4
0.30+0.1
-0.05
T1K
0.65
0.65
1.30
2.0±0.1
3
1.25±0.1
PIN CONNECTIONS
1.
2.
3.
4.
Base
Emitter
Collector
Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/05/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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