Samsung K6T4008U1C-TB10 512kx8 bit low power and low voltage cmos static ram Datasheet

K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No. History
Draft Data
Remark
0.0
Initial Draft
January 13, 1998
Advance
0.1
Revisied
- Speed bin change
KM68U4000C : 85/100ns → 70/85/100ns
- DC Characteristics change
ICC : 5mA at read/write → 4mA at read
ICC1 : 3mA → 4mA
ICC2 : 35mA → 30mA
ISB : 0.5mA → 0.3mA
ISB1 : 10µA → 15µA for commercial parts
- Add 32-TSOP1-0820
June 12, 1998
Preliminary
0.11
Errata correct
- 32-TSOP1-0813 products: T → TG
November 7, 1998
1.0
Finalize
January 15, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
• Process Technology: TFT
• Organization: 512K×8
• Power Supply Voltage
K6T4008V1C Family: 3.0~3.6V
K6T4008U1C Family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0820F, 32-TSOP1-0813.4F
The K6T4008V1C and K6T4008U1C families are fabricated by
SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature Vcc Range
K6T4008V1C-B
Commercial(0~70°C)
K6T4008U1C-B
K6T4008V1C-F
Industrial(-40~85°C)
K6T4008U1C-F
Speed
Standby
(ISB1, Max)
3.0~3.6V
701)/85ns
2.7~3.3V
701)/85/100ns
3.0~3.6V
701)/85ns
2.7~3.3V
701)/85/100ns
15µA
30mA
20µA
PKG Type
Operating
(ICC2, Max)
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
1. The paramerter is measured with 30pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A18
1
32
VCC
VCC
32
1
A16
2
31
A15
A15
31
2
A18
A16
A14
3
30
A17
A17
30
3
A14
A12
4
29
WE
WE
29
4
A12
A7
5
28
A13
A13
28
5
A7
A6
6
27
A8
A8
27
6
A6
A5
7
26
A9
A9
26
7
A5
A4
A4
8
25
A11
A11
25
8
A4
A5
A3
9
24
OE
OE
24
9
A3
A6
A2
10
23
A10
A10
23
10
A2
A7
A1
11
22
CS
CS
22
11
A1
12
21
I/O8
I/O8
21
12
A0
I/O1
13
20
I/O7
I/O7
20
13
I/O1
I/O2
14
19
I/O6
I/O6
19
14
I/O2
I/O3
15
18
I/O5
I/O5
18
15
I/O3
VSS
16
17
I/O4
I/O4
17
16
VSS
A0
32-SOP
32-TSOP2
(Forward)
32-TSOP2
(Reverse)
Clk gen.
A0
A1
Row
select
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP1
32-STSOP1
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A14
A16
A18
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Data
cont
I/O8
Function
A0~A18 Address Inputs
WE
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
Name
A2 A3 A8 A9 A10 A11 A13 A15 A17
CS
Function
Vcc
Power
Vss
Ground
I/O Circuit
Column select
Data
cont
WE
Name
Memory array
1024 rows
512×8 columns
A12
I/O1
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
Precharge circuit.
Control
logic
OE
I/O 1~I/O8 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
PRODUCT LIST
Commercial Temp Products(0~70°C)
Part Name
Industrial Temp Products(-40~85°C)
Function
Part Name
Function
K6T4008V1C-GB70
K6T4008V1C-GB85
K6T4008V1C-VB70
K6T4008V1C-VB85
K6T4008V1C-MB70
K6T4008V1C-MB85
K6T4008V1C-TB70
K6T4008V1C-TB85
K6T4008V1C-YB70
K6T4008V1C-YB85
32-SOP, 70ns, 3.3V, LL
32-SOP, 85ns, 3.3V, LL
32-TSOP2-F, 70ns, 3.3V, LL
32-TSOP2-F, 85ns, 3.3V, LL
32-TSOP2-R, 70ns, 3.3V, LL
32-TSOP2-R, 85ns, 3.3V, LL
32-TSOP1-F, 70ns, 3.3V, LL
32-TSOP1-F, 85ns, 3.3V, LL
32-sTSOP1-F, 70ns, 3.3V, LL
32-sTSOP1-F, 85ns, 3.3V, LL
K6T4008V1C-GF70
K6T4008V1C-GF85
K6T4008V1C-VF70
K6T4008V1C-VF85
K6T4008V1C-MF70
K6T4008V1C-MF85
K6T4008V1C-TF70
K6T4008V1C-TF85
K6T4008V1C-YF70
K6T4008V1C-YF85
32-SOP, 70ns, 3.3V, LL
32-SOP, 85ns, 3.3V, LL
32-TSOP2-F, 70ns, 3.3V, LL
32-TSOP2-F, 85ns, 3.3V, LL
32-TSOP2-R, 70ns, 3.3V, LL
32-TSOP2-R, 85ns, 3.3V, LL
32-TSOP1-F, 70ns, 3.3V, LL
32-TSOP1-F, 85ns, 3.3V, LL
32-sTSOP1-F, 70ns, 3.3V, LL
32-sTSOP1-F, 85ns, 3.3V, LL
K6T4008U1C-GB70
K6T4008U1C-GB85
K6T4008U1C-GB10
K6T4008U1C-VB70
K6T4008U1C-VB85
K6T4008U1C-VB10
K6T4008U1C-MB70
K6T4008U1C-MB85
K6T4008U1C-MB10
K6T4008U1C-TB70
K6T4008U1C-TB85
K6T4008U1C-TB10
K6T4008U1C-YB70
K6T4008U1C-YB85
K6T4008U1C-YB10
32-SOP, 70ns, 3.0V, LL
32-SOP, 85ns, 3.0V, LL
32-SOP, 100ns, 3.0V, LL
32-TSOP2-F, 70ns, 3.0V, LL
32-TSOP2-F, 85ns, 3.0V, LL
32-TSOP2-F, 100ns, 3.0V, LL
32-TSOP2-R, 70ns, 3.0V, LL
32-TSOP2-R, 85ns, 3.0V, LL
32-TSOP2-R, 100ns, 3.0V, LL
32-TSOP1-F, 70ns, 3.0V, LL
32-TSOP1-F, 85ns, 3.0V, LL
32-TSOP1-F, 100ns, 3.0V, LL
32-sTSOP1-F, 70ns, 3.0V, LL
32-sTSOP1-F, 85ns, 3.0V, LL
32-sTSOP1-F, 100ns, 3.0V, LL
K6T4008U1C-GF70
K6T4008U1C-GF85
K6T4008U1C-GF10
K6T4008U1C-VF70
K6T4008U1C-VF85
K6T4008U1C-VF10
K6T4008U1C-MF70
K6T4008U1C-MF85
K6T4008U1C-MF10
K6T4008U1C-TF70
K6T4008U1C-TF85
K6T4008U1C-TF10
K6T4008U1C-YF70
K6T4008U1C-YF85
K6T4008U1C-YF10
32-SOP, 70ns, 3.0V, LL
32-SOP, 85ns, 3.0V, LL
32-SOP, 100ns, 3.0V, LL
32-TSOP2-F, 70ns, 3.0V, LL
32-TSOP2-F, 85ns, 3.0V, LL
32-TSOP2-F, 100ns, 3.0V, LL
32-TSOP2-R, 70ns, 3.0V, LL
32-TSOP2-R, 85ns, 3.0V, LL
32-TSOP2-R, 100ns, 3.0V, LL
32-TSOP1-F, 70ns, 3.0V, LL
32-TSOP1-F, 85ns, 3.0V, LL
32-TSOP1-F, 100ns, 3.0V, LL
32-sTSOP1-F, 70ns, 3.0V, LL
32-sTSOP1-F, 85ns, 3.0V, LL
32-sTSOP1-F, 100ns, 3.0V, LL
FUNCTIONAL DESCRIPTION
CS
OE
WE
1)
1)
I/O
Mode
Power
H
X
X
High-Z
Deselected
Standby
L
H
H
High-Z
Output Disabled
Active
L
L
H
Dout
Read
Active
L
X1)
L
Din
Write
Active
1. X means don′t care (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
Ratings
Unit
Remark
VIN,VOUT
-0.5 to VCC+0.5
V
-
VCC
-0.3 to 4.6
V
-
PD
1.0
W
-
TSTG
-65 to 150
°C
-
0 to 70
°C
K6T4008V1C-L, K6T4008U1C-L
-40 to 85
°C
K6T4008V1C-P, K6T4008U1C-P
TA
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
K6T4008V1C Family
K6T4008U1C Family
3.0
2.7
3.3
3.0
3.6
3.3
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
VIH
K6T4008V1C, K6T4008U1C Family
2.2
-
Vcc+0.32)
V
Input low voltage
VIL
K6T4008V1C, K6T4008U1C Family
-
0.6
V
-0.3
3)
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+2.0V in case of pulse width ≤ 30ns
3. Undershoot : -2.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Min
Typ
Max
Unit
Input leakage current
Item
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
Average operating current
Symbol
Test Conditions
ICC
IIO=0mA, CS=VIL, VIN=VIL or V IH, Read
-
-
4
mA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA CS≤0.2V,VIN≤0.2V or V IN≥Vcc-0.2V
-
-
4
mA
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN =VIH or VIL
-
-
30
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.2
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs = V IL or VIH
-
-
0.3
mA
Standby Current (CMOS)
ISB1
CS≥Vcc-0.2V, Other inputs=0~Vcc
-
-
151)
µA
1. Industrial product = 20µA
4
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL1)=30pF+1TTL
CL1)
1. Including scope and jig capacitance
1. 70ns product
AC CHARACTERISTICS (K6T4008V1C Family: Vcc=3.0~3.6V, K6T4008U1C Family: Vcc=2.7~3.3V
Commercial product:: T A=0 to 70°C, Industrial product: TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Write
85ns
Units
100ns
Min
Max
Min
Max
Min
Max
tRC
70
-
85
-
100
-
ns
Address access time
tAA
-
70
-
85
-
100
ns
Chip select to output
tCO
-
70
-
85
-
100
ns
Output enable to valid output
tOE
-
35
-
40
-
50
ns
Chip select to low-Z output
tLZ
10
-
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
25
0
25
0
30
ns
Output disable to high-Z output
tOHZ
0
25
0
25
0
30
ns
Output hold from address change
tOH
10
-
10
-
15
-
ns
Write cycle time
tWC
70
-
85
-
100
-
ns
Chip select to end of write
tCW
60
-
70
-
80
-
ns
Address set-up time
tAS
0
-
0
-
0
-
ns
Address valid to end of write
tAW
60
-
70
-
80
-
ns
Write pulse width
tWP
55
-
55
-
70
-
ns
Write recovery time
tWR
0
-
0
-
0
-
ns
Write to output high-Z
tWHZ
0
25
0
25
0
30
ns
Data to write time overlap
tDW
30
-
35
-
40
-
ns
Data hold from write time
tDH
0
-
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
5
-
ns
Read cycle time
Read
70ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR
CS≥Vcc-0.2V
Data retention current
IDR
Vcc=3.0V, CS≥Vcc-0.2V
Data retention set-up time
tSDR
Recovery time
tRDR
See data retention waveform
Min
Typ
Max
Unit
2.0
-
3.6
V
-
0.5
0
-
-
5
-
-
15
1)
µA
ms
1. Industrial product = 20µA
5
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL , WE=VIH)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO1
CS
tHZ
tOE
OE
Data out
High-Z
tOLZ
tLZ
tOHZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tAS(3)
tDW
tDH
Data Valid
Data in
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS
Controlled)
tWC
Address
tAS(3)
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. t CW is measured from the CS going low to end of write.
3. t AS is measured from the address valid to the beginning of write.
4. t WR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
tSDR
Data Retention Mode
tRDR
3.0/2.7V
2.2V
VDR
CS≥VCC - 0.2V
CS
GND
7
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
PACKAGE DIMENSIONS
Units: millimeters(inches)
32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)
0~8°
#17
14.12±0.30
0.556±0.012
#1
11.43±0.20
0.450±0.008
#16
2.74±0.20
0.108±0.008
3.00
0.118 MAX
20.87
0.822 MAX
20.47±0.20
0.806±0.008
0.20 +0.10
-0.05
0.008+0.004
-0.002
13.34
0.525
#32
0.80±0.20
0.031±0.008
0.10 MAX
0.004 MAX
( 0.71 )
0.028
+0.100
-0.050
+0.004
0.016 -0.002
0.41
1.27
0.050
0.05
MIN
0.002
8
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
PACKAGE DIMENSIONS
Units: millimeters(inches)
32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F)
+0.10
-0.05
0.008+0.004
-0.002
0.20
20.00±0.20
0.787±0.008
#1
#32
8.40
0.331MAX
0.50
0.0197
#17
#16
0.25
0.010 TYP
0.25
)
0.010
8.00
0.315
(
0.05
0.002 MIN
1.00±0.10
0.039±0.004
1.20
0.047MAX
18.40±0.10
0.724±0.004
+0.10
-0.05
0.006+0.004
-0.002
0~8°
0.45 ~0.75
0.018 ~0.030
(
0.10 MAX
0.004MAX
0.15
0.50
)
0.020
32 PIN SMALLER THIN SMALL OUTLINE PACKAGE TYPE I (0813.4F)
+0.10
-0.05
0.008+0.004
-0.002
0.20
13.40±0.10
0.528±0.008
#1
#32
8.40
0.331 MAX
#16
0.25
0.010 TYP
#17
1.00±0.10
0.039±0.004
1.20
0.047 MAX
11.80±0.10
0.465±0.004
+0.10
-0.05
0.006+0.004
-0.002
0.05
0.002 MIN
0.15
0~8°
0.45 ~0.75
0.018 ~0.030
(
9
1.10 MAX
0.004 MAX
0.50
0.0197
0.25
)
0.010
8.00
0.315
(
0.50
)
0.020
Revision 1.0
January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
PACKAGE DIMENSIONS
Units: millimeters(inches)
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0.25
( 0.010 )
#32
0~8°
#17
11.76±0.20
0.463±0.008
#1
10.16
0.400
0.45~0.75
0.018 ~ 0.030
#16
21.35
0.841 MAX
1.00±0.10
0.039±0.004
1.20
0.047 MAX
20.95±0.10
0.825±0.004
(
0.15 +0.10
-0.05
0.006 +0.004
-0.002
0.50
)
0.020
0.10 MAX
0.004 MAX
( 0.95 )
0.037
0.40±0.10
0.016±0.004
0.05 MIN
0.002
1.27
0.050
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0~8°
0.25
(
)
0.010
#1
#16
11.76±0.20
0.463±0.008
#32
10.16
0.400
0.45 ~0.75
0.018 ~ 0.030
#17
21.35
0.841 MAX
1.00±0.10
0.039±0.004
+0.10
-0.05
0.006 +0.004
-0.002
0.15
( 0.50 )
0.020
1.20
0.047 MAX
20.95±0.10
0.825±0.004
0.10 MAX
0.004 MAX
(
0.95
)
0.037
0.40±0.10
0.016±0.004
1.27
0.050
0.05
MIN
0.002
10
Revision 1.0
January 1999
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