Diode Semiconductor Korea FDB101S --- FDB107S VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A SILICON BRIDGE RECTIFIERS FEATURES DB - S Rating to 1000V PRV Surge overload rating to 30 Amperes peak 1± 0.1 Ideal for printed circuit board 6.4± 0.1 0.3 Reliable low cost construction utilizing molded 8.3± 0.3 6.3± 0.2 7.9± 0.2 plastic technique results in inexpensive product 1.2± 0.3 10± 0.6 Lead solderable per MIL-STD-202 method 208 8.3± 0.1 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 2.5± 0.15 5± 0.2 94V-O Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FDB 101S FDB 102S FDB 103S FDB 104S FDB 105S FDB 106S FDB 107S UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard Output current @TA=25 IF(AV) 1.0 A IFSM 30.0 A VF 1.3 V 10.0 μA 1.0 mA Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 IR Maximum reverse recovery time (Note1) t rr Operating junction temperature range TJ - 55 ---- + 125 TSTG - 55 ---- + 150 Storage temperature range NOTE:1. Measured with IF=0.5A,IR=1A, Irr=0.25A. 150 250 500 ns www.diode.kr Diode Semiconductor Korea FDB101S --- FDB107S 24 8 .3 m s S in g le H a lf S in e W a v e T J= 25 18 12 6 1 10 100 FIG.2 -- FORWARD DERATING CURVE AVERAGE FORWARD OUTPUT CURRENT, AMPERSE 30 AMPERSE PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 1.0 R esislive or Indu ctive Load 9.5m m PCB 0.5 COPPERPADS (13m m x 13m m ) 0 0 25 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 75 100 125 150 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 100 30 INSTANTANEOUS REVERSE CURRENT, MICRO AMPERSE 10 1.0 AMPERSE INSTANTANEOUS FORWARD CURRENT, 50 0.1 TJ=125 Pulse Width =300uS 0.1 0.3 0.6 0.9 1.2 1.5 10 1.0 TJ=25 0.1 1.8 .01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr