TSC MBR1050CT Dual common cathode schottky rectifier Datasheet

MBR1035CT thru MBR10200CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBR
MBR
MBR
MBR
MBR
MBR
MBR
1035
1045
1050
1060
1090 10100 10150 10200
CT
CT
CT
CT
CT
CT
CT
CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
200
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
140
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
200
V
Maximum average forward rectified current
IF(AV)
10
A
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
10
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Peak repetitive reverse surge current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25℃
IF= 5 A, TJ=125℃
IF= 10 A, TJ=25℃
IF= 10 A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
VF
IR
1
0.5
A
0.70
0.80
0.85
0.88
0.57
0.65
0.75
0.78
0.80
0.90
0.95
0.98
0.67
0.75
0.85
0.88
2
5
0.1
15
10
V
mA
Voltage rate of change (Rated VR)
dV/dt
10000
Typical thermal resistance
RθJC
1.5
TJ
- 55 to +150
O
C
TSTG
- 55 to +150
O
C
Operating junction temperature range
Storage temperature range
V/μs
O
C/W
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308060
Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
PART NO.
PACKING CODE
QUALIFIED
MBR10xxCT
(Note 1)
Prefix "H"
C0
GREEN COMPOUND
CODE
PACKAGE
PACKING
TO-220AB
50 / Tube
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
EXAMPLE
AEC-Q101
PACKING CODE
PREFERRED P/N
PART NO.
MBR1060CT C0
MBR1060CT
C0
MBR1060CT C0G
MBR1060CT
C0
MBR1060CTHC0
MBR1060CT
QUALIFIED
H
GREEN COMPOUND
DESCRIPTION
CODE
G
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
5
4
3
2
RESISTIVE OR
INDUCTIVE LOAD
1
0
0
50
100
150
PEAK FORWARD SURGE CURRENT (A)
AVERAGE FORWARD A
CURRENT (A)
6
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
180
8.3ms Single Half Sine Wave
JEDEC Method
150
120
90
60
30
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
1000
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
Pulse Width=300μs
1% Duty Cycle
100
MBR1050CT-1060CT
10
MBR1035CT-1045CT
MBR1090CT-10100CT
1
MBR10150-10200CT
0.1
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Document Number: DS_D1308060
1.2
1.4
10
TJ=125℃
1
TJ=75℃
0.1
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG. 5- TYPICAL JUNCTION CAPACITANCE
100
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
10
1000
1
0.1
100
0.1
1
10
0.01
100
0.1
1
10
100
T-PULSE DURATION. (sec)
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
13.19
14.79
0.519
0.582
H
2.41
2.67
0.095
0.105
I
4.42
4.76
0.174
0.187
J
1.14
1.40
0.045
0.055
K
5.84
6.86
0.230
0.270
L
2.20
2.80
0.087
0.110
M
0.35
0.64
0.014
0.025
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1308060
Version: K13
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308060
Version: K13
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