ON MC74VHCT132ADTRG Quad 2-input nand schmitt trigger Datasheet

MC74VHCT132A
Quad 2-Input NAND Schmitt
Trigger
The MC74VHCT132A is an advanced high speed CMOS Schmitt
NAND trigger fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining CMOS low power dissipation.
Pin configuration and function are the same as the MC74VHC00,
but the inputs have hysteresis and, with its Schmitt trigger function,
the VHCT132A can be used as a line receiver which will receive slow
input signals.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5.0 V CMOS level output swings.
The VHCT132A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 72 FETs or 18 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 6
1
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MARKING
DIAGRAMS
14
SOIC−14
D SUFFIX
CASE 751A
1
VHCT132AG
AWLYWW
1
14
1
VHCT
132A
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MC74VHCT132A/D
MC74VHCT132A
A1
1
A3
3
B1
A2
B2
8
Y1
2
B3
4
A4
6
9
12
11
Y2
5
B4
Y3
10
Y4
13
Figure 1. Logic Diagram
VCC
B4
A4
Y4
B3
A3
Y3
14
13
12
11
10
9
8
FUNCTION TABLE
Inputs
1
2
3
4
5
6
7
A1
B1
Y1
A2
B2
Y2
GND
Output
A
B
Y
L
L
H
H
L
H
L
H
H
H
H
L
Figure 2. Pinout: 14−Lead Packages (Top View)
ORDERING INFORMATION
Package
Shipping†
MC74VHCT132ADR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
MC74VHCT132ADTRG
TSSOP−14
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MC74VHCT132A
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MAXIMUM RATINGS
Symbol
Parameter
VCC
DC Supply Voltage
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
†Derating − SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage
Vin
DC Input Voltage
Vout
DC Output Voltage
TA
Operating Temperature, All Package Types
Min
Max
Unit
4.5
5.5
V
0
5.5
V
0
VCC
V
− 40
+ 85
_C
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
Min
VT+
Positive Threshold Voltage
3.0
4.5
5.5
VT−
Negative Threshold Voltage
3.0
4.5
6.0
0.35
0.5
0.6
VH
Hysteresis Voltage
3.0
4.5
5.5
0.30
0.40
0.50
VIN = VIH or VIL
IOH = − 50mA
2.0
3.0
4.5
1.9
2.9
4.4
IOH = − 4mA
IOH = − 8mA
4.5
5.5
2.58
3.94
VIN = VIH or VIL
IOL = 50mA
2.0
3.0
4.5
IOL = 4mA
IOL = 8mA
VOH
VOL
Minimum High−Level Output
Voltage
IOH = −50mA
Maximum Low−Level Output
Voltage
TA ≤ 85°C
TA = 25°C
Typ
Max
Min
1.7
2.0
2.0
Max
2.0
3.0
4.5
0.0
0.0
0.0
Min
1.6
2.0
2.0
0.35
0.5
0.6
1.20
1.40
1.60
TA ≤ 125°C
0.30
0.40
0.50
Max
Unit
1.6
2.0
2.0
V
0.35
0.5
0.6
1.20
1.40
1.60
0.30
0.40
0.50
1.9
2.9
4.4
1.9
2.9
4.4
2.48
3.80
2.34
3.66
V
1.20
1.40
1.60
V
V
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
5.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IIN
Maximum Input Leakage
Current
VIN = 5.5V or
GND
0 to
5.5
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply
Current
VIN = VCC or
GND
5.5
2.0
20
40
mA
ICCT
Quiescent Supply Current
Input: VIN = 3.4V
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage Current
VOUT = 5.5V
0.0
0.5
5.0
10
mA
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3
MC74VHCT132A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay,
A or B to Y
Cin
Min
Test Conditions
TA = − 40 to
85°C
TA ≤ 125°C
Min
Typ
Max
Min
Max
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15pF
CL = 50pF
7.6
10.1
11.9
15.4
1.0
1.0
14.0
17.5
16.5
20.0
VCC = 5.0 ± 0.5 V
CL = 15pF
CL = 50pF
4.9
6.4
7.7
9.7
1.0
1.0
9.0
11.0
11.0
13.0
4
10
10
10
Maximum Input Capacitance
pF
Typical @ 25°C, VCC = 5.0 V
CPD
16
Power Dissipation Capacitance (Note 1)
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0 V)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.3
− 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
TEST POINT
3.0V
A
1.5V
OUTPUT
GND
tPLH
DEVICE
UNDER
TEST
tPHL
VOH
Y
CL*
1.5V
VOL
*Includes all probe and jig capacitance
Figure 3. Switching Waveforms
Figure 4. Test Circuit
(a) A Schmitt-Trigger Squares Up Inputs With Slow Rise and Fall Times
VH
Vin
(b) A Schmitt-Trigger Offers Maximum Noise Immunity
VCC
VH
VT+
VT-
Vin
VCC
VT+
VT-
GND
GND
VOH
VOH
Vout
Vout
VOL
VOL
Figure 5. Typical Schmitt−Trigger Applications
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4
MC74VHCT132A
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE K
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
0.25
M
C A
S
B
S
DETAIL A
h
A
e
DIM
A
A1
A3
b
D
E
e
H
h
L
M
b
X 45 _
M
A1
C
SEATING
PLANE
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
MC74VHCT132A
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
ON Semiconductor and the
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