JMNIC MJE18006 Silicon npn power transistor Datasheet

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
MJE18006
·
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
·Improved efficiency due to low base
drive requirements:
-High and flat DC current gain hFE
-Fast switching
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
6
A
ICM
Collector current-Peak
15
A
IB
Base current
4
A
IBM
Base current-Peak
8
A
PD
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
1.25
℃/W
Rth j-A
Thermal resistance junction to ambient
62.5
℃/W
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Product Specification
www.jmnic.com
Silicon NPN Power Transistors
MJE18006
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; L=25mH
VCEsat-1
Collector-emitter saturation voltage
IC=1.3A ;IB=0.13A
TC=125℃
VCEsat-2
Collector-emitter saturation voltage
MIN
TYP.
MAX
450
UNIT
V
0.6
V
0.65
IC=3A ;IB=0.6A
TC=125℃
0.7
V
0.8
VBEsat-1
Emitter-base saturation voltage
IC=1.3A; IB=0.13A
1.2
V
VBEsat-2
Emitter-base saturation voltage
IC=3A; IB=0.6A
1.3
V
Collector cut-off current
VCES=RatedVCES;
VEB=0
ICES
0.1
0.5
TC=125℃
VCES=800V
0.1
mA
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
14
hFE-2
DC current gain
IC=3A ; VCE=1V
6
hFE-3
DC current gain
IC=1.3A ; VCE=1V
11
hFE-4
DC current gain
IC=10mA ; VCE=5V
10
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
14
MHz
Collector outoput capacitance
f=1MHz ; VCB=10V;f=1.0MHz
75
pF
90
ns
fT
COB
34
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
ton
Turn-on time
toff
Turn-off time
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
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1.7
2.5
μs
0.2
0.3
μs
1.2
2.5
μs
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
MJE18006
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
JMnic
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