Microsemi APTML1002U60R020T3AG Linear mosfet power module Datasheet

APTML1002U60R020T3AG
VDSS = 1000V
RDSon = 600mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
Linear MOSFET
Power Module
Application
•
Electronic load dedicated to power supplies and
battery discharge testing
Features
•
•
•
•
•
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
28 27 26 25
•
•
20 19 18
23 22
29
16
30
15
31
14
32
•
•
•
•
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
13
2
3
4
7
8
10 11 12
Pins 13/14 ; 29/30 ; 31/32 must be shorted together
Absolute maximum ratings (per leg)
IDM
VGS
RDSon
PD
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
20
14
74
±30
720
520
Unit
V
A
V
mΩ
W
March, 2010
ID
Parameter
Drain - Source Breakdown Voltage
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–3
APTML1002U60R020T3AG – Rev 1
Symbol
VDSS
APTML1002U60R020T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VDS = 1000V ; VGS = 0V
Tj = 25°C
VDS = 800V ; VGS = 0V
Tj = 125°C
VGS = 10V, ID = 10A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Typ
Max
250
1000
720
4
±100
Unit
Typ
6000
775
285
Max
Unit
Typ
20
2
Max
600
2
µA
mΩ
V
nA
Dynamic Characteristics (per leg)
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
pF
Shunt Electrical Characteristics (per leg)
Symbol Characteristic
Resistance value
Rsh
Tsh
Tolerance
Psh
Load capacity
Ish
Current capacity
Min
TC=25°C
TC=80°C
TC=25°C
TC=80°C
20
10
31
22
Unit
mΩ
%
W
A
Temperature sensor PTC
Symbol
R25
R100/R25
R-55/R25
B
Characteristic
Resistance @ 25°C
Resistance ratio
Resistance ratio
Temperature coefficient
Min
1980
1.676
0.48
Tamb=100°C & 25°C
Tamb=-55°C & 25°C
Typ
1.696
0.49
7900
Max
2020
1.716
0.50
Unit
Ω
ppm/K
Thermal and package characteristics
Min
MOSFET (per leg)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
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M4
4000
-40
-40
-40
2.5
Typ
Max
0.24
150
125
100
4.7
110
Unit
°C/W
V
°C
March, 2010
Characteristic
Junction to Case Thermal Resistance
N.m
g
2–3
APTML1002U60R020T3AG – Rev 1
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
APTML1002U60R020T3AG
SP3 Package outline (dimensions in mm)
28
17
1
12
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3–3
APTML1002U60R020T3AG – Rev 1
March, 2010
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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