ON MJ4502 High-power pnp silicon transistor Datasheet

MJ4502
High-Power PNP Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
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Features
•
•
•
•
High DC Current Gain − hFE = 25−100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the NPN MJ802
Pb−Free Package is Available*
30 AMPERE
POWER TRANSISTOR
PNP SILICON
100 VOLTS − 200 WATTS
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCER
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Collector−Emitter Voltage
VCEO
90
Vdc
VEB
4.0
Vdc
Emitter−Base Voltage
Collector Current
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
W
W/_C
TJ, Tstg
−65 to +200
_C
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
MJ4502G
AYYWW
MEX
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ4502
G
A
YY
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ4502
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
MJ4502G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 12
1
Publication Order Number:
MJ4502/D
MJ4502
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 200 mAdc, RBE = 100 W)
V(BR)CER
100
−
Vdc
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc)
VCEO(sus)
90
−
Vdc
−
−
1.0
5.0
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)
ICBO
mAdc
Emitter−Base Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
DC Current Gain
(IC = 7.5 Adc, VCE = 2.0 Vdc)
hFE
25
100
−
Base−Emitter “On” Voltage
(IC = 7.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.3
Vdc
Collector−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VCE(sat)
−
0.8
Vdc
Base−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VBE(sat)
−
1.3
Vdc
fT
2.0
−
MHz
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
PD, POWER DISSIPATION (WATTS)
200
150
100
50
0
0
20
40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
180
Figure 1. Power−Temperature Derating Curve
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2
200
MJ4502
2.0
2.0
VCE = 2.0 V
TJ = 175°C
25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.2 0.3 0.5
1.0
1.6
1.4
1.2
VBE(sat) @ IC/IB = 10
1.0
0.8
VBE @ VCE = 2.0 V
0.6
0.4
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
0.1
0.03 0.05
TJ = 25°C
1.8
“ON” VOLTAGE (VOLTS)
hFE, NORMALIZED CURRENT GAIN
3.0
VCE(sat) @ IC/IB = 10
0.2
2.0 3.0 5.0
10
0
0.03 0.05
20 30
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. “On” Voltages
10
20 30
IC, COLLECTOR CURRENT (AMP)
100
1.0 ms
50
20
dc
100 ms
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
10
5.0
2.0
1.0
0.5
0.2
0.1
1.0
TJ = 200°C
5.0 ms
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS @ TC = 25°C
PULSE DUTY CYCLE v 10%
2.0 3.0
5.0
10
20 30
50
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
100
Figure 4. Active Region Safe Operating Area
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3
MJ4502
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
U
SEATING
PLANE
K
2 PL
0.13 (0.005)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJ4502/D
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