IXYS IRFP470 N-channel enhancement mode megamos fet Datasheet

MegaMOSTMFET
IRFP 470
VDSS = 500 V
ID (cont) = 24 A
RDS(on) = 0.23 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
24
A
IDM
TC = 25°C, pulse width limited by TJM
96
A
24
A
30
mJ
5
V/ns
IAR
EAR
TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
T stg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
D (TAB)
G = Gate,
S = Source,
Features
6
g
l
300
°C
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VGS = ±20 VDC, VDS = 0
I DSS
VDS = 0.8 • VDSS
VGS = 0 V
R DS(on)
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
25
250
µA
µA
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.23
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
D = Drain,
TAB = Drain
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Applications
l
l
l
l
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
l
l
l
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
92605E(5/97)
1-2
IRFP 470
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
t d(on)
11
21
S
4200
pF
450
pF
135
pF
24
30
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
33
45
ns
td(off)
RG = 2 Ω, (External)
65
80
ns
30
40
ns
160
190
nC
28
40
nC
75
85
nC
tf
Q g(on)
Q gs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Q gd
R thJC
0.42
R thCK
0.25
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
24
A
ISM
Repetitive; pulse width limited by TJM
96
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
© 2000 IXYS All rights reserved
600
TO-247 AD Outline
1
2
Terminals: 1 - Gate
3 - Source
3
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A1
2.2
2.54
.087 .102
A2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b1
1.65
2.13
.065 .084
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅ P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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