IXYS IXGJ40N60C2D1 Hiperfasttm igbts w/ diode Datasheet

HiPerFASTTM IGBTs
w/ Diode
IXGT40N60C2D1
IXGJ40N60C2D1
IXGH40N60C2D1
VCES
IC110
=
=
VCE(SAT) ≤
tfi(typ) =
600V
40A
2.7V
32ns
C2-Class High Speed IGBTs
TO-268 (IXGT)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C ( Limited by Lead)
TC = 110°C
TC = 25°C, 1ms
75
40
200
A
A
A
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 80
VCE ≤ VCES
A
PC
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
4
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
TO-268 (IXGJ)
G
C
E
C (Tab)
TO-247 (IXGH)
G
VGE(th)
IC
ICES
VCE = VCES, VGE= 0V
3.0
5.0
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 30A, VGE = 15V, Note 1
TJ = 125°C
2.2
1.7
C
= Collector
Tab = Collector
Features
z
z
z
V
200 μA
3 mA
TJ = 125°C
C (Tab)
Very High Frequency IGBT
Square RBSOA
High Current Handling Capability
Applications
Characteristic Values
Min.
Typ.
Max.
= 250μA, VCE = VGE
E
G = Gate
E = Emitter
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
C
±100
nA
2.7
V
V
z
z
z
z
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Advantages
z
High Power Density
Very Fast Switching Speeds for High
Frequency Applications
z
High Power Surface Mountable
Packages
z
© 2010 IXYS CORPORATION, All Rights Reserved
DS99041F(11/10)
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
20
IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
VCE = 25V, VGE = 0V, f = 1MHz
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
36
S
2500
220
54
pF
pF
pF
95
14
36
nC
nC
nC
18
20
ns
ns
90
32
0.20
VCE = 400V, RG = 3Ω
Note 2
Inductive load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
TO-247 & TO-268
TO-247 Outline
140
0.37
ns
ns
mJ
18
20
0.60
130
80
0.50
ns
ns
mJ
ns
ns
mJ
0.25
0.42 °C/W
°C/W
Reverse Diode (FRED)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
TJ = 150°C
1.6
IRM
trr
TJ = 100°C
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
TJ = 100°C
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
100
25
RthJC
Notes:
1
2
∅P
3
e
1 = Gate 2 = Collector
3 = Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
4.7
5.3
.185 .209
2.2
2.54
.087 .102
A1
2.2
2.6
.059 .098
A2
b
1.0
1.4
.040 .055
1.65
2.13
.065 .084
b1
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D
20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
TO-268 Leaded Outline
2.5
V
V
4
A
ns
ns
0.9 °C/W
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
1 = Gate 2,4 = Collector
3 = Emitter
TO-268 Outline
1 = Gate 2,4 = Collector
3 = Emitter
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
60
210
VG E = 15V
13V
11V
180
9V
150
40
I C - Amperes
I C - Amperes
50
VG E = 15V
13V
11V
9V
7V
30
20
120
90
7V
60
10
30
5V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
Fig. 3. Output Characteristics
60
6
7
1.3
VG E = 15V
13V
11V
9V
1.2
40
VC E (sat) - Normalized
50
I C - Amperes
5
Fig. 4. Temperature Dependence of V CE(sat)
@ 125 Deg. C
7V
30
20
I C = 60A
1.1
VG E = 15V
1
0.9
I C = 30A
0.8
5V
10
I C = 15A
0.7
0
0.6
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage
Fig. 6. Input Admittance
vs. Gate-to-Emitter voltage
4
210
T J = 25º C
180
I C - Amperes
3.5
VC E - Volts
4
V C E - Volts
V C E - Volts
3
2.5
I C = 60A
2
150
120
90
T J = 125º C
60
30A
25º C
1.5
-40º C
30
15A
1
0
5
6
7
8
9
10
11
V G E - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
12
13
14
15
4
5
6
7
V G E - Volts
8
9
10
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
70
1.8
60
Eoff - milliJoules
125º C
40
30
20
I C = 60A
TJ = 125º C
VG E = 15V
VC E = 400V
1.4
25º C
50
g f s - Siemens
1.6
T J = -40º C
1.2
1
I C = 45A
0.8
0.6
I C = 30A
0.4
10
0.2
0
I C = 15A
0
0
30
60
90
120
150
180
2
4
6
I C - Amperes
1.6
1.6
R G = 3 Ohms
R G= 10 Ohms - - - - -
Eoff - milliJoules
Eoff - MilliJoules
T J = 125ºC
0.6
16
I C = 45A
0.8
0.6
0.4
0.2
0.2
T J = 25ºC
I C = 60A
1
0.4
I C = 30A
I C = 15A
0
0
10
20
30
40
50
25
60
50
I C - Amperes
75
100
125
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
10000
f = 1M Hz
Capacitance - p F
VC E = 300V
I C = 30A
I G = 10mA
12
VG E - Volts
14
VG E = 15V
VC E = 400V
1.2
1
0.8
12
R G = 3 Ohms
R G = 10 Ohms - - - - -
1.4
VG E = 15V
VC E = 400V
1.2
10
Fig. 10. Dependence of Eoff on T emperature
Fig. 9. Dependence of Eoff on IC
1.4
8
R G - Ohms
9
6
C ies
1000
C oes
100
3
C res
10
0
0
20
40
60
80
100
Q G - nanoCoulombs
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
0
5
10
15
20
25
V C E - Volts
30
35
40
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 13. Maximum Transient Thermal Impedance
Z(th) J C - (ºC/W)
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
1
10
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
1000
60
A
nC
50
IF
30
TVJ= 100°C
VR = 300V
25
800
Qr
30
20
IF= 60A
IF= 30A
IF= 15A
600
TVJ=100°C
15
400
20
10
TVJ=25°C
200
10
0
IF= 60A
IF= 30A
IF= 15A
IRM
40
TVJ=150°C
TVJ= 100°C
VR = 300V
A
0
1
2
5
0
100
3 V
A/μs 1000
-diF/dt
VF
Fig. 14. Forward current IF versus VF
Fig. 15. Reverse recovery charge Qr
versus -diF/dt
2.0
90
1.0
400
600 A/μs
800
-diF/dt
1000
1.00
TVJ= 100°C
IF = 30A
μs
tfr
0.75
tfr
IF= 60A
IF= 30A
IF= 15A
80
200
Fig. 16. Peak reverse current IRM
versus -diF/dt
V
V FR
15
trr
Kf
0
20
TVJ= 100°C
VR = 300V
ns
1.5
0
VFR
10
0.50
IRM
70
0.5
0.0
5
Qr
0
40
80
120 °C 160
60
0
200
T VJ
400
600
800
A/μs
1000
0
0.25
0
200
400
-diF/dt
Fig. 17. Dynamic parameters Qr, IRM
versus TVJ
Fig. 18. Recovery time trr versus
-diF/dt
0.00
600 A/μs
800 1000
diF/dt
Fig. 19. Peak forward voltage VFR
and tfr versus diF/dt
1
K/W
Constants for ZthJC calculation:
i
0.1
Z thJC
1
2
3
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
t
s
1
Fig. 20. Transient thermal resistance junction to case
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_40N60C2(5Y)12-11-06-B
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