STMicroelectronics BU807 Medium voltage npn fast switching darlington transistor Datasheet

BU806
BU807
®
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
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■
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STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
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1
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 oCRT video displays.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CBO
V CEV
V CEO
V EBO
IC
I CM
I DM
IB
P tot
T stg
Tj
Parameter
Collector-base Voltage (I E = 0)
Collector-emitter Voltage (V BE = -6V)
Collector-emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
Total Power Dissipation at T case < 25 o C
Storage Temperature
Max Operating Junction Temperature
October 2003
Value
BU806
400
400
200
Unit
BU807
330
330
150
6
8
15
10
2
60
-65 to 150
150
V
V
V
V
A
A
A
A
W
o
o
C
C
1/4
BU806 / BU807
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
2.08
70
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CES
Collector Cut-off
Current (V BE = 0)
for BU807
for BU806
V CE = 330 V
V CE = 400 V
100
100
µA
µA
I CEV
Collector Cut-off
Current (V BE = -6V)
for BU807
for BU806
V CE = 330 V
V CE = 400 V
100
100
µA
µA
I EBO
Emitter Cut-off
Current (I C = 0)
V EB = 6 V
3.5
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
for BU807
for BU806
150
200
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 5A
I B = 50mA
1.5
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 5A
I B = 50mA
2.4
V
Damper Diode
Forward Voltage
I F = 4A
2
V
1
µs
µs
µs
µs
VF∗
t on
t off
ts
tf
RESISTIVE LOAD
Turn-on Time
Turn-off Time
Storage Time
Fall Time
IC = 5 A
I B1 = 50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
2/4
V CC = 100 V
I B2 = -500 mA
0.35
0.4
0.55
0.2
BU806 / BU807
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
3/4
BU806 / BU807
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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