DSK FR101 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
FR101---FR107
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
DO - 41
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR
101
FR
102
FR
103
FR
104
FR
105
FR
106
FR
107
UNITS
Maximum recurrent peak reverse voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.0
A
IFSM
30.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
5.0
IR
150
250
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
CJ
12
Typical thermal resistance
(Note3)
RθJA
55
TJ
- 55---- +150
TSTG
- 55---- + 150
Operating junction temperature range
Storage temperature range
A
100.0
500
ns
pF
/W
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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FR101---FR107
Diode Semiconductor Korea
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50
N.1.
10
N.1.
+0.5A
D.U.T.
( - )
0
(+)
50VDC
(APPROX)
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
SET TIMEBASEFOR 50/100 ns /cm
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
100
10
TJ =25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
.8
.6
.4
.2
0
25
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
14
12
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE,VOLTS
40
100
75
100
125
150
175
200
FIG.5--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
20
50
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
16
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
30
20
TJ=125
8.3ms Single Half
Sine-Wave
10
0
1
100
10
NUMBER OF CYCLES AT 60 Hz
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