HP MSA-0736-TR1 Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0735, -0736
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical Vd
• 3 dB Bandwidth:
DC to 2.4 GHz
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0735 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9591E
OUT
MSA
Vd = 4.0 V
6-394
35 micro-X Package[1]
Note:
1. Short leaded 36 package available upon
request.
MSA-0735, -0736 Absolute Maximum Ratings
Absolute Maximum[1]
60 mA
275 mW
+13 dBm
200°C
–65 to 200°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,5]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 157°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. Ths small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 1.3 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
Max.
dB
12.5
13.5
14.5
dB
± 0.6
± 1.0
GHz
2.4
Input VSWR
f = 0.1 to 2.5 GHz
2.0:1
Output VSWR
f = 0.1 to 2.5 GHz
1.8:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
4.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
5.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
19.0
tD
Group Delay
f = 1.0 GHz
psec
140
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
3.6
4.0
4.4
–7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0735
MSA-0736-BLK
MSA-0736-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-395
MSA-0735, -0736 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA)
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.13
.13
.14
.16
.19
.21
.27
.32
.37
.43
.47
.49
.51
.60
S21
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
–3
–6
–13
–20
–29
–40
–71
–107
–134
–160
–179
167
134
96
13.5
13.4
13.4
13.3
13.2
12.9
12.2
11.5
10.3
8.8
7.5
6.2
4.0
2.1
4.71
4.69
4.68
4.64
4.60
4.42
4.07
3.74
3.26
2.76
2.37
2.05
1.59
1.27
175
170
160
150
140
129
104
79
62
44
27
12
–15
–42
–19.0
–18.5
–18.6
–18.4
–18.1
–17.6
–16.5
–15.6
–15.3
–15.4
–15.3
–15.2
–15.2
–14.6
.112
.119
.118
.120
.125
.131
.149
.165
.173
.171
.173
.168
.173
.185
2
3
6
7
8
10
10
7
5
0
–4
–6
–11
–16
.29
.29
.29
.28
.28
.27
.24
.19
.15
.14
.16
.21
.28
.29
–7
–12
–24
–35
–47
–58
–83
–103
–113
–120
–120
–121
–135
–167
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
40
12
30
8
Id (mA)
G p (dB)
10
6
16
TC = +125°C
TC = +25°C
TC = –55°C
G p (dB)
Gain Flat to DC
20
12
2.0 GHz
10
10
2
6
0
0
0.1
0.3 0.5
1.0
3.0
6.0
4
0
1
2
3
4
10
5
Figure 1. Typical Power Gain vs.
Frequency, Id = 22 mA.
6.0
I d = 40 mA
12
GP
4
6
P1 dB
I d = 15 mA
I d = 22 mA
I d = 40 mA
9
6
NF (dB)
5
P1 dB (dBm)
5.5
6
NF (dB)
NF
40
Figure 3. Power Gain vs. Current.
15
13
30
I d (mA)
Figure 2. Device Current vs. Voltage.
14
12
20
Vd (V)
FREQUENCY (GHz)
G p (dB)
0.1 GHz
0.5 GHz
1.0 GHz
8
4
P1 dB (dBm)
14
I d = 22 mA
5.0
3
4.5
5
0
4
3
–55 –25
I d = 15 mA
+25
+85
+125
–3
0.1
4.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=22mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-396
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A07
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-397
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