SAVANTIC MJ16010 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
MJ16010
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Switching Regulators
·Inverters
·Solenoids
·Relay Drivers
·Motor Controls
·Deflection Circuits
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
ICM
Collector current-peak
20
A
IB
Base current
10
A
IBM
Base current-peak
15
A
PD
Total Power Dissipation
Derate above 25
175
1.0
W
W/
Ti
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
MJ16010
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCE(sat)-1
Collector-emitter saturation voltage
IC=5A; IB=0.7A
2.5
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100
3.0
3.0
V
Base-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100
1.5
1.5
V
ICER
Collector cut-off current
VCE=850V;RBE=50>;TC=100
2.5
mA
ICEV
Collector cut-off current
VCE=850V; VBE(off)=1.5V
TC=100
0.25
1.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
mA
hFE
DC current gain
IC=15A ; VCE=5V
COB
Output capacitance
VCB=10V,IE=0;f=1.0KHz
400
pF
VBE(sat)
CONDITIONS
MIN
TYP.
MAX
450
UNIT
V
5
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ; VCC=250V
IB1=1.3A ;IB2=2.6A
PW=30µs; RB2=1.6>
Duty CycleC2.0%
2
20
ns
200
ns
1200
ns
200
ns
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
MJ16010
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