ON BC856BM3T5G General purpose transistor pnp silicon Datasheet

BC856BM3T5G
Preferred Devices
General Purpose Transistor
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−723 which is designed for low
power surface mount applications.
• This is a Pb−Free Device
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−65
V
Collector−Base Voltage
VCBO
−80
V
Emitter−Base Voltage
VEBO
−5.0
V
IC
−100
mA
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
265
mW
Collector Current − Continuous
1
BASE
2
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction to Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2)
Junction and Storage
Temperature Range
2
1
2.1
mW/°C
RqJA
470
°C/W
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
March, 2006 − Rev. 1
SOT−723
CASE 631AA
STYLE 1
3B M
3B = Specific Device Code
M = Date Code
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2006
3
1
Device
BC856BM3T5G
Package
Shipping†
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BC856BM3/D
BC856BM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−65
−
−
−80
−
−
−80
−
−
−5.0
−
−
−
−
−
−
−15
−4.0
−
220
150
290
−
475
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ICBO
V
V
V
V
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
−
Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)
Collector −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)
VCE(sat)
−
−
−
−
−0.3
−0.65
V
Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)
Base −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)
VBE(sat)
−
−
−0.7
−0.9
−
−
V
Base −Emitter Voltage (IC = −2.0 mA, VCE = −5.0 V)
Base −Emitter Voltage (IC = −10 mA, VCE = −5.0 V)
VBE(on)
−0.6
−
−
−
−0.75
−0.82
mV
100
−
−
−
−
4.5
−
−
10
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
MHz
Cobo
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
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2
pF
NF
dB
BC856BM3T5G
TYPICAL CHARACTERISTICS
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
−2.0
−1.6
−1.2
IC =
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
−55°C to 125°C
−2.2
Figure 3. Collector Saturation Region
40
qVB for VBE
500
VCE = −5.0 V
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
−50 −100
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
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3
BC856BM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
A
b
b1
C
D
E
e
HE
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your
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BC856BM3/D
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