DSK GBU25D Silicon bridge rectifier Datasheet

Diode Semiconductor Korea GBU25A --- GBU25M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
SILICON BRIDGE RECT IFIERS
FEATURES
GBU
Ideal for printed circuit board
22.3± 0.3
Reliable low cos t cons truction utilizing m olded
3.7± 0.35
4 45°
-
AC
+
2.4± 0.2
2.5± 0.2
18.3± 0.5
Mounting pos ition: Any
P.
TY
2.2± 0.2
.9
R1
94V-O
1.9± 0.3
Plas tic m aterrial has U/L flam m ability clas s ification
3.8± 0.2
18.7± 0.2
7.9± 0.2
plas tic technique
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
25A
GBU
25B
GBU
25D
GBU
25G
GBU
25J
GBU
25K
GBU
25M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V R MS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average f orw ard Tc=100
output current
IF (AV)
25.0
A
IF SM
340
A
VF
1.0
V
5.0
μA
500.0
mA
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 12.5 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =125
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
Operating junction temperature range
Storage temperature range
IR
CJ
211
94
(note 2)
RθJA
21.0
(note 1)
RθJC
2.2
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
pF
/W
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
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GBU25A --- GBU25M
Diode Semiconductor Korea
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
AVERAGE FORWARD CURRENT,
AMPERES
40
35
30
25
20
15
10
5
0
50
0
100
150
TEMPERATURE,
INSTANTANEOUS FORWARD CURRENT,
AMPERES
FIG.1 -- DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
DURGE CURRENT
350
TJ =T J max.
SINGLE SINE-WAVE
(JEDEC METHOD)
280
210
140
70
0
1
10
100
NUMBER OF CYCLES AT 60Hz
TJ =25
f=1.0 MHz
VSIG=50mVp-p
200
100
10
.1
50-400V
600-1000V
1
4
10
REVERSE VOLTAGE, VOLTS
100
10
T J=25
Pulse W idth
=300uS
1
.1
.4
.6
.8
1
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
500
T J= 1 5 0
100
T J= 1 2 5
10
5 0 -4 0 0 V
6 0 0 -1 0 0 0 V
1 .0
0 .1
TJ=25
.0 1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
JUNCTION CAPACITANCE, pF
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG
1000
100
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
/W
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
1000
10
1
.1
.01
.1
1
10
100
t, HEATING TIME, sec.
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