Sony CXA2515AM Rf amplifier for cd player and cd-rom Datasheet

CXA2515AM/AN
RF Amplifier for CD Player and CD-ROM
For the availability of this product, please contact the sales office.
Description
The CXA2515AM/AN is an IC for RF signal
processing of CD player and CD-ROM.
Features
• Wide-band RF amplifier. (RF signal fc ≥ 12MHz)
• RF equalizer (T type)
• EFM time constant can be adjusted
(with switching function)
• APC (Automatic Power Control) function
• Power saving function
• Supports laser coupler
Functions
• RF summing amplifier
• RF equalizer
• Focus error amplifier
• Tracking error amplifier
• APC circuit
CXA2515AM
20 pin SOP (Plastic)
CXA2515AN
20 pin SSOP (Plastic)
Absolute Maximum Ratings
• Supply voltage
VCC
• Storage temperature Tstg
• Allowable power dissipation
PD
7
V
–65 to +150 °C
500
mW
Operating Conditions
• Supply voltage
VCC – GND +3.0 to +5.5 V
• Operating temperature Topr
–20 to +75 °C
Applications
• CD players
• CD-ROM drives
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96317D8Y
CXA2515AM/AN
Block Diagram
VCC
1.25V
LD 1
10k
55k
25
40k
56k
PD 2
VC
BUFFER
APC
19 MODE
40k
10k
56k
VCC
NC 3
VCC
PD1 4
17 RF_M
BGR
10k
2k
PD2 5
VC
RF
Summing
Amp
VC
348k
VC 6
18 VCC
Standby
20k
10k
16 BPF_SW
15 LPF_SW
RF Drive
Amp
348k
GND 7
20 APC_ON
1k
10k
32k
32k
14 RFO_1
VC
Focus
Error Amp
E 8
13 RFO_2
174k
11p
5p
F 9
Tracking
Error Amp
12 FE
73.4k
TE1 10
VC
320k
Tracking
Drive Amp
–2–
11 TE
CXA2515AM/AN
Pin Description
Pin
No.
Symbol
I/O
Equivalent circuit
Description
10k
1
LD
O
2
PD
I
1k
APC amplifier output.
1
55k
8k
APC amplifier input.
2
10k
3
NC
No connection.
10k
10k
20k
124
4
5
PD1
PD2
I
I
4
Input of RF summing
amplifier and focus error
amplifier.
32k
32k
124
348k
5
174k
348k
VC
120
6
VC
25
6
O
120
7
VC
GND
(VCC + GND) / 2 DC voltage
output.
Ground.
–3–
CXA2515AM/AN
Pin
No.
Symbol
I/O
Equivalent circuit
Description
124
124
8
8
9
10
11
E
F
TE1
TE
I
I
O
O
9
320k
124
124
11
10
73.4k
Tracking error amplifier input
for Pins 8 and 9;
tracking error amplifier output
for Pin 10;
tracking error drive output for
Pin 11.
348k
12
13
FE
RFO_2
348k
O
Focus error amplifier output
for Pin 12.
124
12
124
O
13
14
1k
14
17
RFO_1
RF_M
O
I
124
17
14
2k
Buffer switch output which
sets the RF signal time
constant.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.
Non-inversion input of RF
drive amplifier for Pin 17;
RF signal output for Pin 14;
resistance value connected
between Pins 14 and 17
which determines the low
frequency gain of RF drive
amplifier.
124
15
15
LPF_SW
O
124
17
–4–
Transistor switch output
which sets the LPF cut-off
frequency of RF amplifier.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.
CXA2515AM/AN
Pin
No.
Symbol
I/O
Equivalent circuit
Description
124
16
16
BPF_SW
O
VC
18
VCC
VCC.
50k
124
19
MODE
I
19
50k
20
APC_ON
Transistor switch output
which sets the RF amplifier
BPF boost.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.
I
20
100k
–5–
30k
Multiple-speed mode
switching input.
VCC : High multiple-speed
mode
GND: Low multiple-speed
mode
APC amplifier ON/OFF
switching.
OFF when connecting to VCC;
ON when connecting to GND.
–6–
G2-1
G2-2
Voltage gain 1
Voltage gain 2
F2-1
F2-2
V2-2
V2-3
Frequency
response 2
Maximum output
amplitude H
Maximum output
amplitude L
19
20
18
17
Frequency
response 1
16
15
14
Voltage gain difference G2-3
V2-1
Offset voltage
13
O
O
O
O
O
O
O
O
300mV
300mV
0V
–300mV
300mV
V1-3
O
2.0V
12
14
13
14
13
14
–3
G2-1 to G2-2
DC voltage measurement
DC voltage measurement
—
1.9
–4
17.7
V1 = 100mVpp, f = 1kHz
V1 = 100mVpp, f = 20kHz
Difference for G2-2
17.7
V1 = 100mVpp, f = 1kHz
–4
–50
DC voltage measurement
V1 = 100mVpp, f = 20kHz
Difference for G2-1
—
1.3
DC voltage measurement
DC voltage measurement
–3
Maximum output
amplitude L
12
O
–2.0V
V1 = 100mVpp, f = 4MHz
Difference for G1-2
V1-2
O
–3
Maximum output
amplitude H
11
O
2.0V
V1 = 100mVpp, f = 12MHz
Difference for G1-1
F1-2
O
Frequency
response
10
O
F1-1
16.5
Frequency
response
9
–2.0V
V1 = 100mVpp, f = 100kHz
O
O
G1-3
16.5
Voltage gain
8
–2.0V
V1 = 100mVpp, f = 100kHz
O
O
G1-2
14
16.5
Voltage gain
7
2.0V
V1 = 100mVpp, f = 100kHz
O
O
G1-1
–50
Pin DC current measurement
13
Voltage gain
6
–2.0V
V1-2
Offset voltage
5
–50
Pin DC current measurement
14
–2.0V
0V
V1-1
Offset voltage
4
—
Pin DC current measurement
18
2.0V
300mV
Istb
Standby current
–12
Pin DC current measurement
3
—
Min.
Pin DC current measurement
18
7
–2.0V
E4
300mV
E3
300mV 2.0V
E2
IEE
RF amplifier
FE amplifier
–2.3
2.4
—
—
0
20.7
20.7
0
–1.3
2.3
—
—
20.3
20
20
100
25
1.45
–6.3
6.3
Typ.
–1.9
—
—
—
3
23.7
23.7
50
–0.3
—
—
—
23.3
23
23
300
150
3
—
12
Max.
V
V
dB
dB
dB
dB
dB
mV
V
V
dB
dB
dB
dB
dB
mV
mV
mA
mA
mA
Unit
(Ta = 25°C, VCC = 2.5V, GND = VC, VEE = –2.5V)
MeasureDescription of output waveform
ment
and measurement method
point
Current consumption
0V
E1
Bias conditions
2
S1 S2 S3 S4
SW conditions
ICC
Symbol
Current consumption
Measurement item
1
Measurement No.
Electrical Characteristics
CXA2515AM/AN
–7–
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
TE amplifier
APC
VC
Measurement No.
69mV
0V
V4-1
V4-2
V4-3
V4-4
V4-5
Offset voltage 1
Offset voltage 2
Offset voltage 3
Offset voltage 4
Offset voltage 5
V5-1
177mV
V3-3
Maximum output
amplitude L
Offset voltage
123mV
V3-2
Maximum output
amplitude H
O
F3-4
Frequency
response 4
0V
300mV
O 300mV
O
F3-3
Frequency
response 3
O
F3-2
Frequency
response 2
F3-1
O
2.0V
1
11
V1 = 100mVpp, f = 1kHz
V1 = 100mVpp, f = 1kHz
DC voltage measurement
17.9
17.9
–50
Min.
2.0V
–2.0V
–2.0V
6
–4
V1 = 100mVpp, f = 200kHz
Difference for G3-2
–0.1
—
I1 = 0.8mADC,
DC voltage measurement
DC voltage measurement
1.8
0.8
–1.2
—
—
DC voltage measurement
DC voltage measurement
DC voltage measurement
DC voltage measurement
DC voltage measurement
1.9
–4
V1 = 100mVpp, f = 200kHz
Difference for G3-1
DC voltage measurement
–4
V1 = 100mVpp, f = 20kHz
Difference for G3-2
–4
–2.0V
–2.0V
E4
V1 = 100mVpp, f = 20kHz
Difference for G3-1
O
O
2.0V
E3
Frequency
response 1
G3-2
Voltage gain 2
O
0V
E2
MeasureDescription of output waveform
ment
and measurement method
point
–3
G3-1
Voltage gain 1
0V
E1
Bias conditions
G3-1 to G3-2
V3-1
Offset voltage
S1 S2 S3 S4
SW conditions
Voltage gain difference G3-3
Symbol
Measurement item
—
—
2.45
2.1
0.1
–1.6
—
—
—
—
—
—
0
20.9
20.9
0
Typ.
0.1
0
—
—
1.6
–0.1
–1.9
—
—
—
—
—
3
23.9
23.9
50
Max.
V
V
V
V
V
V
V
V
dB
dB
dB
dB
dB
dB
dB
mV
Unit
CXA2515AM/AN
–8–
E1
V1
S4
S3
VEE
S2
S1
VEE
VCC
43k
43k
VEE
VCC
NC
PD
LD
TE1
110k
F
110k
E
GND
33µ
VC
PD2
PD1
33µ
E2
I1
10
9
8
7
6
5
4
3
2
1
10k
Electrical Characteristics Measurement Circuit
174k
32k
32k
10k
10k
APC
55k
10k
1k
Tracking
Error Amp
73.4k
RF
Summing
Amp
20k
56k
Focus
Error Amp
348k
348k
VCC
10k
56k
1.25V
2k
Tracking
Drive Amp
320k
5p
BGR
11p
VC
BUFFER
Standby
25
RF Drive
Amp
40k
40k
VCC
VCC
11
12
13
14
15
16
17
18
19
20
TE
FE
RFO_2
RFO_1
LPF_SW
150p
BPF_SW
RF_M
VCC
MODE
APC_ON
1p
510
E3
E4
10k
10k
10k
10k
3.9k
1k
CXA2515AM/AN
1µ
10µ
22
VCC
–9–
F IN
E IN
PD2 IN
PD1 IN
100µ
43k
43k
NC
PD
TE1
9
8
7
6
5
4
3
2
1
10
110k
VC
F
110k
E
GND
VC
PD2
PD1
500
100
LD
VC
174k
32k
32k
10k
10k
APC
55k
10k
Tracking
Error Amp
1k
VC
73.4k
RF
Summing
Amp
20k
56k
Focus
Error Amp
348k
348k
VCC
10k
56k
1.25V
2k
Tracking
Drive Amp
320k
5p
BGR
11p
VC
BUFFER
VC
Standby
25
RF Drive
Amp
40k
40k
VCC
VC
VCC
11
12
13
14
15
16
17
18
19
20
TE
FE
30k
RFO_2
RFO_1
LPF_SW
BPF_SW
RF_M
VCC
MODE
APC_ON
RF OUT
1000p
3.9k
1k
Tracking Error Out
Focus Error Out
VC
4700p
1p
68p 390
13p
MODE
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
10k
Application Circuit (Double-/sextuple-speed switching)
CXA2515AM/AN
CXA2515AM/AN
Note on Operation
The RF AC maximum output amplitude is 1.3Vpp when Pin 13 and 14 are capacitor-coupled shown in
Application Circuit.
Description of Operation
RF Amplifier
The signal currents from the photodiodes A, B, C and D become PD1 = A + C and PD2 = B + D by I-V converting,
and they are input to Pins 4 and 5. These signals are added at the RF summing amplifier and inverted at the
RF drive amplifier and then output to Pin 14.
390
68p
3.9k
1k
4.9k
RF_ M
A
RFO
14
17
LPF_SW
15
20k
C
PD1
I-V
B
PD2
I-V
10k
4
5
2k
10k
D
VC
VC RF
Summing Amp
RF Drive Amp
The low frequency component of RFO output voltage is as follows:
VRFO =
20k
4.9k
×
× (PD1 + PD2)
10k
2k
= 4.9 × (PD1 + PD2)
Focus Error Amplifier
The operation of (PD2 – PD1) is performed and the resulting signal is output to Pin 12.
15P
348k
PD1
I-V
PD2
I-V
32k
FE
4
12
5
Focus
Error Amp
32k
174k
15P
348k
VC
The low frequency component of FE output voltage is as follows:
VFE = 348k × (PD2 – PD1)
32k
= 10.9 × (PD2 – PD1)
– 10 –
13p
1p
BPF_SW
16
CXA2515AM/AN
Tracking Error Amplifier
The signal current from the photodiode F is I-V converted and input to Pin 9 via an input resistor. The signal
current from the photodiode E is I-V converted, and input to Pin 8 after its gain is adjusted by the volume.
These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and
are output to Pin 12.
11P
5P
VC
320k
62k
E
73.4k
8
100k
I-V
TE
VC
F
43k
12
9
I-V
110k
TE1
10
The low frequency component of TE output voltage is as follows:
VTE =
110k
320k
×
× (F – E)
43k
73.4k
= 11.1 × (F – E)
Center Voltage Generation Circuit
The center voltage of VR = (VCC + GND) is supplied.
The maximum current is approximately ±3mA.
Vcc
Vcc
40k
Vc Buffer
25
VR
6
VC
40k
APC Circuit
When the laser diode is driven with constant current, the optical output possesses large negative temperature
characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output
remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF.
VCC
100µ
56k
PD
22
10k
2
1k
8k
1
55k
10k
LD
56k
10k
1µ
1.25V
– 11 –
10µH
100
500
CXA2515AM/AN
Example of Representative Characteristics
RFO_1 Frequency Response (W/O EQ)
RFO_2 Frequency Response (W/O EQ)
30
20
20
GAIN [dB]
GAIN [dB]
30
10
0
100k
10
1M
10M
0
100k
100M
1M
FREQ. [Hz]
10M
100M
FREQ. [Hz]
RF_Out Frequency Response (T-EQ)∗
TE_Out Frequency Response
30
20
20
GAIN [dB]
GAIN [dB]
30
10
10
MODE = LOW
MODE = HIGH
0
100k
MODE = LOW
MODE = HIGH
0
1M
10M
100M
1k
10k
FREQ. [Hz]
100k
1M
FREQ. [Hz]
∗ T-EQ As shown in Application Circuit
FE_Out Frequency Response
APC Characteristics
2.5
30
2.0
1.5
20
LD [V]
GAIN [dB]
1.0
10
0.5
0
–0.5
–1.0
0
100
1k
10k
100k
–1.5
FREQ. [Hz]
–2.0
0
– 12 –
100
200
PD [mV]
300
CXA2515AM/AN
Package Outline
Unit: mm
CXA2515AM
20PIN SOP (PLASTIC) 300mil
+ 0.4
12.45 – 0.1
+ 0.4
1.85 – 0.15
20
11
6.9
10
0.45 ± 0.1
+ 0.1
0.2 – 0.05
1.27
0.5 ± 0.2
1
+ 0.2
0.1 – 0.05
7.9 ± 0.4
+ 0.3
5.3 – 0.1
0.15
± 0.12 M
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY / PHENOL RESIN
SONY CODE
SOP-20P-L01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
∗SOP020-P-0300-A
LEAD MATERIAL
COPPER ALLOY
PACKAGE WEIGHT
0.3g
JEDEC CODE
CXA2515AN
20PIN SSOP (PLASTIC)
+ 0.2
1.25 – 0.1
∗6.5 ± 0.1
0.1
11
20
1
6.4 ± 0.2
∗4.4 ± 0.1
A
10
0.65
b
(0.15)
(0.22)
0.5 ± 0.2
0.1 ± 0.1
DETAIL B : SOLDER
b=0.22 ± 0.03
+ 0.03
0.15 – 0.01
+ 0.1
b=0.22 – 0.05
+ 0.05
0.15 – 0.02
0.13 M
DETAIL B : PALLADIUM
NOTE: Dimension “∗” does not include mold protrusion.
0° to 10°
PACKAGE STRUCTURE
DETAIL A
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
SSOP-20P-L01
LEAD TREATMENT
SOLDER / PALLADIUM
PLATING
EIAJ CODE
SSOP020-P-0044
LEAD MATERIAL
42/COPPER ALLOY
PACKAGE MASS
0.1g
JEDEC CODE
NOTE : PALLADIUM PLATING
This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).
– 13 –
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