PHILIPS BYD73F Ultra fast low-loss controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D119
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1996 Sep 18
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD81
package through Implotec(1)
technology. This package is
• High maximum operating
temperature
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
handbook, 4 columns
a
• Available in ammo-pack.
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
UNIT
BYD73A
−
50
V
BYD73B
−
100
V
BYD73C
−
150
V
BYD73D
−
200
V
BYD73E
−
250
V
BYD73F
−
300
V
BYD73G
−
400
V
−
50
V
continuous reverse voltage
BYD73B
−
100
V
BYD73C
−
150
V
BYD73D
−
200
V
BYD73E
−
250
V
BYD73F
−
300
V
BYD73G
−
400
V
average forward current
BYD73A to D
BYD73E to G
IF(AV)
MAX.
repetitive peak reverse voltage
BYD73A
IF(AV)
MIN.
average forward current
BYD73A to D
BYD73E to G
1996 Sep 18
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
2
−
1.75
A
−
1.70
A
−
1.00
A
−
0.95
A
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
IFRM
IFRM
BYD73 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 55 °C; see Figs 6 and 7
BYD73A to D
−
14
A
BYD73E to G
−
15
A
repetitive peak forward current
Tamb = 60 °C; see Figs 8 and 9
BYD73A to D
−
8.5
A
BYD73E to G
−
9.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
25
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
MIN.
TYP.
MAX.
−
−
0.75
V
−
−
0.83
V
−
−
0.98
V
−
−
1.05
V
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYD73A to D
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 12 and 13
BYD73E to G
VF
forward voltage
BYD73A to D
IF = 1 A;
see Figs 12 and 13
BYD73E to G
V(BR)R
IR
trr
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD73A
55
−
−
V
BYD73B
110
−
−
V
BYD73C
165
−
−
V
BYD73D
220
−
−
V
BYD73E
275
−
−
V
BYD73F
330
−
−
V
BYD73G
440
−
−
V
VR = VRRMmax;
see Fig.14
−
−
1
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.14
−
−
100
µA
−
−
25
ns
−
−
50
ns
reverse current
reverse recovery time
BYD73A to D
BYD73E to G
1996 Sep 18
UNIT
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
Cd
BYD73 series
PARAMETER
diode capacitance
CONDITIONS
f = 1 MHz; VR = 0 V;
see Fig.15
BYD73A to D
BYD73E to G
dI R
-------dt
maximum slope of reverse recovery
current
BYD73A to D
BYD73E to G
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig.17
MIN.
TYP.
MAX.
UNIT
−
50
−
pF
−
40
−
pF
−
−
4
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE
UNIT
60
K/W
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
GRAPHICAL DATA
MGC535
handbook, halfpage
MGC536
handbook, halfpage
2.0
2.0
IF(AV)
IF(AV)
(A)
(A)
1.6
1.6
lead length 10 mm
1.2
1.2
0.8
0.8
0.4
0.4
0
lead length 10 mm
0
100
0
Ttp ( oC)
200
100
0
BYD73A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYD73E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Ttp ( oC)
200
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC537
MGC538
1.6
1.6
handbook, halfpage
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
100
Tamb ( oC)
0
200
100
BYD73A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
BYD73E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Switched mode application.
Fig.4
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
5
Tamb ( oC)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MCD605
16
handbook, full pagewidth
I
δ=
0.05
FRM
(A)
0.1
8
0.2
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
t p (ms)
10
4
BYD73A to D
Ttp = 55 °C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD607
handbook, 16
full pagewidth
I
δ=
0.05
FRM
(A)
0.1
8
0.2
0.5
1
0
10 -2
10 -1
1
10
10 2
10 3
t p (ms)
10 4
BYD73E to G
Ttp = 55°C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MCD604
10
handbook, full pagewidth
δ=
0.05
I FRM
(A)
0.1
5
0.2
0.5
1
0
10 -2
10 -1
1
10
10 2
10 3
10 4
t p (ms)
BYD73A to D
Tamb = 60 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD606
handbook, 10
full pagewidth
δ=
0.05
I FRM
(A)
0.1
5
0.2
0.5
1
0
-2
10
10
-1
1
10
10
2
10
3
t p (ms)
10
4
BYD73E to G
Tamb = 60 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MGC540
MGC539
2
2
handbook, halfpage
handbook, halfpage
2.5 2 1.57 1.42
a=3
a=3
2.5 2 1.57 1.42
P
(W)
P
(W)
1
1
0
0
0
1
IF(AV) (A)
0
2
BYD73A to D
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
1
2
IF(AV) (A)
BYD73E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD594
MGC531
10
10
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
8
8
6
6
4
4
2
2
0
0
0
1
VF (V)
2
0
1
2
VF (V)
3
BYD73A to D
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
BYD73E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1996 Sep 18
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MGA853
3
10halfpage
handbook,
MCD608
2
10
handbook, halfpage
IR
(µA)
Cd
(pF)
102
10
A, B, C, D
10
E, F, G
1
100
0
T j ( o C)
1
200
1
10 2
10
10 3
V R (V)
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
IF halfpage
andbook,
dI F
dt
7
t rr
50
10% t
dI R
dt
100%
2
IR
MGC499
3
MGA200
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
1996 Sep 18
Fig.17 Reverse recovery definitions.
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
BYD73 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18
10
MAM057
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
PACKAGE OUTLINE
5 max
handbook, full pagewidth
0.81
max
2.15
max
28 min
3.8 max
28 min
MBC051
Dimensions in mm.
The marking band indicates the cathode.
Fig.19 SOD81.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
11
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