BSI BS616UV4016DC10 Ultra low power cmos sram 256k x 16 bit Datasheet

Ultra Low Power CMOS SRAM
256K X 16 bit
BS616UV4016
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
n DESCRIPTION
Ÿ Wide VCC low operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 2.0V
Operation current : 12mA (Max.) at 100ns
1mA (Max.) at 1MHz
Standby current : 0.1uA (Typ.) at 25 OC
VCC = 3.0V
Operation current : 15mA (Max.) at 100ns
2mA (Max.) at 1MHz
Standby current : 0.25uA (Typ.) at 25OC
Ÿ High speed access time :
-10
100ns (Max.)
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
The BS616UV4016 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 2.0V/25OC and maximum access time of 100ns at
85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV4016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV4016 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
STANDBY
OPERATING
TEMPERATURE
Operating
(ICCSB1, Max)
VCC=3.0V
PKG TYPE
(ICC, Max)
VCC=3.0V
VCC=2.0V
1MHz
VCC=2.0V
fMax.
1MHz
fMax.
BS616UV4016DC
DICE
Commercial
+0OC to +70OC
BS616UV4016AC
2.0uA
1.0uA
1.5mA
13mA
0.8mA
10mA
BS616UV4016EC
TSOP II-44
BS616UV4016AI
Industrial
-40OC to +85OC
BS616UV4016EI
4.0uA
2.0uA
2.0mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
15mA
1.0mA
12mA
BGA-48-0608
TSOP II-44
n BLOCK DIAGRAM
n PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
BGA-48-0608
BS616UV4016EC
BS616UV4016EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
D8
UB
A3
A4
CE
D0
C
D9
D10
A5
A6
D1
D2
D
VSS
D11
A17
A7
D3
VCC
E
VCC
D12
NC
A16
D4
VSS
F
D14
D13
A14
A15
D5
D6
G
D15
NC
A12
A13
WE
D7
H
NC
A8
A9
A10
A11
NC
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
A12
A11
A10
A9
A8
A5
A6
A7
A4
A3
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 4096
4096
DQ0
.
.
.
.
.
.
16
.
.
.
.
16
.
.
Data
Output
Buffer
16
Column I/O
Write Driver
Sense Amp
16
256
Column Decoder
DQ15
CE
WE
OE
UB
LB
Data
Input
Buffer
8
Control
Address Input Buffer
A13 A14 A15 A16 A17 A0 A1 A2
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616UV4016
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Revision 1.6
May.
2006
BS616UV4016
n PIN DESCRIPTIONS
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 16-bit in the RAM
CE Chip Enable Input
CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
There 16 bi-directional ports are used to read data from or write data into the RAM.
Ports
VCC
Power Supply
VSS
Ground
n TRUTH TABLE
MODE
CE
WE
OE
LB
UB
IO0~IO7
IO8~IO15
VCC CURRENT
Chip De-selected
(Power Down)
H
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
X
X
H
H
High Z
High Z
ICCSB, ICCSB1
L
H
H
L
X
High Z
High Z
ICC
L
H
H
X
L
High Z
High Z
ICC
L
L
DOUT
DOUT
ICC
H
L
High Z
DOUT
ICC
L
H
DOUT
High Z
ICC
L
L
DIN
DIN
ICC
H
L
X
DIN
ICC
L
H
DIN
X
ICC
Output Disabled
Read
Write
L
L
H
L
L
X
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
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Revision 1.6
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2006
BS616UV4016
(1)
n ABSOLUTE MAXIMUM RATINGS
RATING
UNITS
RANG
AMBIENT
TEMPERATURE
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
-0.5(2) to 5.0
V
Commercial
0OC to + 70OC
1.8V ~ 3.6V
-40 to +125
O
C
Industrial
-40OC to + 85OC
1.9V ~ 3.6V
Storage Temperature
-60 to +150
O
C
SYMBOL
VTERM
TBIAS
TSTG
n OPERATING RANGE
PARAMETER
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
n CAPACITANCE
(1)
O
(TA = 25 C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
CIN
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
O
O
n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
TEST CONDITIONS
VCC=2.0V
MIN.
TYP.(1)
MAX.
UNITS
1.9
--
3.6
V
-0.3(2)
--
Input High Voltage
V
0.8
VCC=3.0V
VIH
0.6
VCC=2.0V
1.4
VCC=3.0V
2.2
--
VCC+0.3(3)
V
IIL
Input Leakage Current
VIN = 0V to VCC
--
--
1
uA
ILO
Output Leakage Current
VI/O = 0V to V CC,
CE= VIH or OE = VIH
--
--
1
uA
VOL
Output Low Voltage
--
--
VOH
ICC
ICC1
ICCSB
ICCSB1(5)
Output High Voltage
V CC = Max, IOL = 0.1mA
VCC=2.0V
V CC = Max, IOL = 2.0mA
VCC=3.0V
V CC = Min, IOH = -0.1mA
VCC=2.0V
1.6
V CC = Min, IOH = -1.0mA
VCC=3.0V
2.4
Operating Power Supply
Current
CE = VIL,
IIO = 0mA, f = FMAX(4)
Operating Power Supply
Current
CE = VIL,
IIO = 0mA, f = 1MHz
Standby Current – TTL
CE = VIH,
IIO = 0mA
Standby Current – CMOS
VCC=2.0V
--
CE≧VCC-0.2V
VCC=2.0V
VIN≧V CC-0.2V or VIN≦0.2V
VCC=3.0V
--
V
12
mA
15
--
--
1.0
mA
2.0
--
--
0.5
mA
1.0
VCC=3.0V
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
R0201-BS616UV4016
--
--
VCC=3.0V
VCC=2.0V
V
0.4
VCC=3.0V
VCC=2.0V
0.2
--
0.1
2.0
0.25
4.0
uA
4. FMAX=1/tRC.
5. ICC (MAX.) is 10mA/13mA at VCC=2.0V/3.0V and TA=70OC.
6. ICCSB1(MAX.) is 1.0uA/2.0uA at VCC=2.0V/3.0V and TA=70OC.
3
Revision 1.6
May.
2006
BS616UV4016
O
O
n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C)
SYMBOL
VDR
PARAMETER
TEST CONDITIONS
CE≧VCC-0.2V
VCC for Data Retention
(3)
ICCDR
MIN.
TYP. (1)
MAX.
UNITS
1.5
--
--
V
--
0.1
1.5
uA
0
--
--
ns
tRC (2)
--
--
ns
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V
Data Retention Current
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
Retention Time
tCDR
See Retention Waveform
tR
Operation Recovery Time
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCDR(Max.) is 1.0uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
VCC
VDR≧1.5V
VCC
tCDR
tR
CE≧VCC - 0.2V
VIH
CE
VCC
n AC TEST CONDITIONS
VIH
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
Output Load
WAVEFORM
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Others
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
CL(1)
VCC
GND
90%
10%
→ ←
Rise Time:
1V/ns
90%
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
10%
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BS616UV4016
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Revision 1.6
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2006
BS616UV4016
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tRC
Read Cycle Time
tAVQX
tAA
Address Access Time
tELQV
tACS
Chip Select Access Time
tBLQV
tBA
Data Byte Control Access Time
tGLQV
tOE
Output Enable to Output Valid
tELQX
tCLZ
Chip Select to Output Low Z
tBLQX
tBE
Data Byte Control to Output Low Z
tGLQX
tOLZ
Output Enable to Output Low Z
tEHQZ
tCHZ
Chip Select to Output High Z
tBHQZ
tBDO
Data Byte Control to Output High Z
tGHQZ
tOHZ
tAVQX
tOH
R0201-BS616UV4016
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
MIN.
TYP.
MAX.
DESCRIPTION
UNITS
100
--
--
ns
--
--
100
ns
(CE)
--
--
100
ns
(LB, UB)
--
--
100
ns
--
--
50
ns
(CE)
15
--
--
ns
(LB, UB)
15
--
--
ns
15
--
--
ns
(CE)
--
--
40
ns
(LB, UB)
--
--
40
ns
Output Enable to Output High Z
--
--
40
ns
Data Hold from Address Change
15
--
--
ns
5
Revision 1.6
May.
2006
BS616UV4016
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
READ CYCLE 2
(1,3,4)
CE
tACS
tBA
LB, UB
tCHZ
tBE
tCLZ
DOUT
READ CYCLE 3
(5)
tBDO
(5)
(1, 4)
tRC
ADDRESS
tAA
OE
tOH
tOE
tOLZ
CE
tCLZ
tOHZ
(5)
tCHZ
(5)
(1,5)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS616UV4016
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Revision 1.6
May.
2006
BS616UV4016
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tWC
Write Cycle Time
tAVWL
tAS
Address Set up Time
tAVWH
tAW
Address Valid to End of Write
tELWH
tCW
Chip Select to End of Write
tBLWH
tBW
Data Byte Control to End of Write
tWLWH
tWP
Write Pulse Width
tWHAX
tWR
Write Recovery Time
tWLQZ
tWHZ
tDVWH
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
100
--
--
ns
0
--
--
ns
100
--
--
ns
(CE)
100
--
--
ns
(LB, UB)
100
--
--
ns
50
--
--
ns
0
--
--
ns
Write to Output High Z
--
--
40
ns
tDW
Data to Write Time Overlap
40
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
40
ns
tWHQX
tOW
End of Write to Output Active
10
--
--
ns
(CE, WE)
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
ADDRESS
tWR1
(3)
tWR2
(3)
OE
tCW
(11)
(5)
CE
tBW
LB, UB
tAW
WE
tWP
tAS
tOHZ
(2)
(4,10)
DOUT
tDH
tDW
DIN
R0201-BS616UV4016
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Revision 1.6
May.
2006
BS616UV4016
WRITE CYCLE 2
(1,6)
tWC
ADDRESS
CE
(5)
LB, UB
(12)
tCW
(11)
tBW
tAW
tWP
WE
tAS
tWHZ
tWR2
(2)
(4,10)
(3)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All
signals must be active to initiate a write and any one signal can terminate a write by going
inactive. The data input setup and hold timing should be referenced to the second transition
edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals
of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11. tCW is measured from the later of CE going low to the end of write.
12. The change of Read/Write cycle must accompany with CE or address toggled.
R0201-BS616UV4016
8
Revision 1.6
May.
2006
BS616UV4016
n ORDERING INFORMATION
BS616UV4016
X
X
Z
YY
SPEED
10: 100ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
D: DICE
A: BGA-48-0608
E: TSOP II-44
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
n PACKAGE DIMENSIONS
TSOP II-44
R0201-BS616UV4016
9
Revision 1.6
May.
2006
BS616UV4016
n PACKAGE DIMENSIONS (continued)
NOTES
:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.2 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8mm)
R0201-BS616UV4016
10
Revision 1.6
May.
2006
BS616UV4016
n Revision History
Revision No.
History
Draft Date
1.5
Add Icc1 characteristic parameter
Jan. 13, 2006
1.6
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
R0201-BS616UV4016
11
Remark
Revision 1.6
May.
2006
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