Microsemi JAN2N6211 Pnp high power silicon transistor Datasheet

TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices
Qualified Level
2N6211
2N6212
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
JAN
JANTX
JANTXV
2N6213
Symbol 2N6211 2N6212 2N6213 Unit
VCEO
VCBO
VEBO
IB
IC
@ TA = +250C (1)
PT
@ TC = +250C (2)
Operating & Storage Temperature
Top, Tstg
225
275
300
350
350
400
6.0
1.0
2.0
3.0
35
-55 to +200
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Characteristics
Thermal Resistance Junction-to-Case
1) Derate linearly 17.1 mW/0C for TA > +250C
2) Derate linearly 200 mW/0C for TC > +250C
TO-66*
(TO-213AA)
THERMAL CHARACTERISTICS
Symbol
RθJC
Max.
5.0
Unit
C/W
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N6211
2N6212
2N6213
V(BR)CEO
225
300
350
Vdc
2N6211
2N6212
2N6213
V(BR)CER
250
325
375
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc
2N6211
2N6212
2N6213
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
V(BR)CEX
275
350
400
Vdc
120101
Page 1 of 2
2N6211, 2N6212, 2N6213 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VCE = 150 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc, VBE = 1.5 Vdc
VCE = 315 Vdc, VBE = 1.5 Vdc
VCE = 360 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 275 Vdc
VCB = 350 Vdc
VCB = 400 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Symbol
2N6211
2N6212
2N6213
2N6211
2N6212
2N6213
Min.
Max.
Unit
ICEO
5.0
mAdc
ICEX
0.5
0.5
0.5
mAdc
ICBO
15
15
15
mAdc
IEBO
0.5
mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.8 Vdc
IC = 1.0 Adc, VCE = 3.2 Vdc
IC = 1.0 Adc, VCE = 4.0 Vdc
IC = 1.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
2N6211
2N6212
2N6213
2N6211
2N6212
2N6213
2N6211
2N6212
2N6213
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
hFE
10
10
10
30
30
30
100
100
100
175
175
150
VCE(sat)
1.4
1.6
2.0
VBE(sat)
1.4
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
4.0
20
220
pF
on
0.6
µs
off
3.1
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc
Turn-Off Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
All Types
Test 2
VCE = 40 Vdc, IC = 0.875 Adc
All Types
Test 3
VCE = 225 Vdc, IC = 0.034 Adc
2N6211
Test 4
VCE = 300 Vdc, IC = 0.02 Adc
2N6212
Test 5
VCE = 350 Vdc, IC = 0.015 Adc
2N6213
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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