MA-COM MAGX-003135-120L00 Gan hemt pulsed power transistor 3.1 - 3.5 ghz, 120w peak, 300us pulse, 10% duty Datasheet

MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Features
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GaN on SiC Depletion-Mode HEMT Transistor
Common-Source Configuration
Broadband Class AB Operation
Thermally Enhanced Cu/Mo/Cu Package
RoHS* Compliant
+50 V Typical Operation
MTTF = 600 Years (TJ < 200°C)
EAR99 Export Classification
MSL-1
Description
The MAGX-003135-120L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor optimized for civilian and military
radar pulsed applications between 3.1 - 3.5 GHz.
Using state of the art wafer fabrication processes,
these high performance transistors provide high
gain, efficiency, bandwidth, ruggedness over a wide
bandwidth for today’s demanding application needs.
The MAGX-003135-120L00 is constructed using a
thermally enhanced Cu/Mo/Cu flanged ceramic
package which provides excellent thermal
performance. High breakdown voltages allow for
reliable and stable operation in extreme mismatched
load conditions unparalleled with older
semiconductor technologies.
Ordering Information
Part Number
Description
MAGX-003135-120L00
120 W GaN Power
Transistor
MAGX-003135-SB5PPR
3.1-3.5 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Electrical Specifications: Freq. = 3.1 - 3.5 GHz, TA = 25°C
Parameter
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: PIN = 10 W, VDD = 50 V, IDQ = 300 mA, Pulse Width = 300 µs, Duty = 10%
Peak Output Power
POUT
120
135
-
W
Power Gain
GP
10.8
11.8
-
dB
Drain Efficiency
ηD
45
52
-
%
Load Mismatch Stability
VSWR-S
-
5:1
-
-
Load Mismatch Tolerance
VSWR-T
-
10:1
-
-
Electrical Characteristics: TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
IDS
-
0.5
9
mA
VGS (TH)
-5
-3
-2
V
DC Characteristics
Drain-Source Leakage Current
VGS = -8 V, VDS = 175 V
Gate Threshold Voltage
VDS = 5 V, ID = 23 mA
Forward Transconductance
VDS = 5 V, ID = 9 A
GM
3.3
-
-
S
Input Capacitance
Not Applicable (Input Matched)
CISS
N/A
N/A
N/A
pF
Output Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
COSS
-
13.4
16
pF
Reverse Transfer Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
CRSS
-
1.4
2.2
pF
Dynamic Characteristics
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Absolute Maximum Ratings1,2,3,4,5
Parameter
Limit
Input Power (PIN)
42 dBm
Drain Supply Voltage (VDD)
+65 V
Gate Supply Voltage (VGG)
-8 to 0 V
Supply Current (IDD)
6.7 A
Absolute Maximum Junction/Channel Temperature
200ºC
Pulsed Power Dissipation at 85 ºC
170 W (Pulse Width = 100 μs)
144 W (Pulse Width = 300 μs)
Operating Temperature
-40 to +95ºC
Storage Temperature
-65 to +150ºC
ESD Min. - Machine Model (MM)
50 V
ESD Min. - Human Body Model (HBM)
250 V
1.
2.
3.
4.
Exceeding any one or combination of these limits may cause permanent damage to this device.
MACOM does not recommend sustained operation near these survivability limits.
For saturated performance, the following is recommended: (3*V DD + abs(VGG)) <175 V.
Operating at nominal conditions with TJ ≤ +200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF
and should be kept as low as possible to maximize lifetime.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)).
Typical Transient Thermal Resistances (IDQ = 300 mA, 300 μs pulse, 10% duty cycle):
a) Freq. = 3.1 GHz, ӨJC = 0.62C/W
TJ = 172C (TC = 82C, 48 V, 5.34 A, POUT = 120 W, PIN = 10.15 W)
b) Freq. = 3.3 GHz, ӨJC = 0.69C/W
TJ = 183C (TC = 83C, 48 V, 5.37 A, POUT = 120 W, PIN = 7.50 W)
c) Freq. = 3.5 GHz, ӨJC = 0.67C/W
TJ = 177C (TC = 84C, 48 V, 5.25 A, POUT = 120 W, PIN = 7.65 W)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Evaluation Board Assembly (3.1 - 3.5 GHz)
Correct Device Sequencing
Evaluation Board Impedances
Freq. (MHz)
ZIF (Ω)
ZOF (Ω)
3100
5.9 - j4.2
4.1 - j2.4
3300
5.2 - j4.8
4.0 - j2.8
3500
3.9 - j5.0
2.6 - j2.6
Zif
INPUT
NETWORK
OUTPUT
NETWORK
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS
Zof
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Typical Performance Curves: PIN = 10 W, VDD = 50 V, IDQ = 300 mA
Peak Output Power vs. Frequency
Power Gain vs. Frequency
150
12.0
Power Gain (dB)
Peak Output Power (W)
300 us, 10%
145
140
135
130
300 us ,10%
100 us, 10%
125
100 us, 10%
11.8
100 us, 20%
11.6
11.4
11.2
100 us, 20%
120
11.0
3.1
3.2
3.3
3.4
3.5
3.1
3.2
Frequency (GHz)
3.3
3.4
3.5
3.4
3.5
Frequency (GHz)
Drain Efficiency vs. Frequency
Return Loss vs. Frequency
53
0.6
300 us ,10%
0.5
100 us, 20%
Droop (dB)
Drain Efficiency (%)
100 us, 10%
52
51
50
0.4
0.3
0.2
300 us ,10%
49
0.1
100 us, 10%
100 us, 20%
48
0.0
3.1
3.2
3.3
3.4
3.5
Frequency (GHz)
3.1
3.2
3.3
Frequency (GHz)
Droop vs. Frequency
-4
Return Loss (dB)
300 us ,10%
-6
100 us, 10%
100 us, 20%
-8
-10
-12
-14
3.1
3.2
3.3
3.4
3.5
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Typical Performance Curves: VDD = 50 V, IDQ = 300 mA
180
55
Drain Efficiency (%)
Peak Output Power (W)
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 300 μs, Duty = 10%)
150
120
3.1 GHz
3.3 GHz
90
50
45
3.1GHz
3.3GHz
40
3.5 GHz
3.5GHz
60
35
5
7
9
11
13
5
7
Input Power (W)
9
11
13
Input Power (W)
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 10%)
55
Drain Efficiency (%)
Peak Output Power (W)
180
150
120
3.1 GHz
90
3.3 GHz
50
45
3.1 GHz
40
3.3 GHz
3.5 GHz
3.5 GHz
60
35
5
7
9
11
13
5
Input Power (W)
7
9
11
13
Input Power (W)
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 20%)
55
Drain Efficiency (%)
Peak Output Power (W)
180
150
120
3.1 GHz
90
3.3 GHz
3.5 GHz
50
45
3.1 GHz
40
3.3 GHz
3.5 GHz
60
35
5
7
9
11
Input Power (W)
13
5
7
9
11
Input Power (W)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
13
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Package Outline
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should be
used when handling these devices.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
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