Renesas BCR10PM Medium power use insulated type, planar passivation type Datasheet

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
BCR10PM
Dimensions
in mm
10.5 MAX
2.8
8.5
17
5.0
1.2
5.2
TYPE
NAME
φ3.2±0.2
VOLTAGE
CLASS
13.5 MIN
3.6
1.3 MAX
0.8
2.54
IT (RMS) ...................................................................... 10A
VDRM ....................................................................... 600V
IFGT !, IRGT !, IRGT # ............................................ 20mA
Viso ........................................................................ 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
123
0.5
2.6
∗ Measurement point of
case temperature
4.5
•
•
•
•
•
2.54
2
1
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, small motor control,
copying machine, electric tool, solenoid drivers, other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Symbol
Parameter
Conditions
Ratings
Unit
IT (RMS)
RMS on-state current
Commercial power frequency, sine full wave 360° conduction, Tc=85°C
ITSM
Surge on-state current
I2t
I2t
PGM
Peak gate power dissipation
5
W
PG (AV)
Average gate power dissipation
0.5
W
VGM
Peak gate voltage
10
V
IGM
Peak gate current
2
Tj
Junction temperature
Tstg
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
41.6
A2s
Storage temperature
—
Viso
for fusing
10
Weight
Typical value
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
!
VFGT !
VRGT !
Gate trigger voltage ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
1.5
V
IFGT !
!
—
—
20
mA
—
—
20
mA
—
—
20
mA
IRGT !
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.2
—
—
V
Rth (j-c)
Thermal resistance
Junction to case ✽3
—
—
3.5
°C/ W
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
Tj=125°C
10
—
—
V/µs
✽4
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
MAIN CURRENT
3. Peak off-state voltage
VD=400V
MAIN
VOLTAGE
TIME
(di/dt)c
TIME
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
MAXIMUM ON-STATE CHARACTERISTICS
100
7
5
3
2
101
7
5
3
2
Tj = 125°C
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
102
7
5
3
2 VGM = 10V
101
7
5
3
2
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
PGM = 5W
PG(AV) =
0.5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
VGD = 0.2V
IRGT I IFGT I, IRGT III
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
103
7
5
4
3
2
TYPICAL EXAMPLE
IRGT I, IRGT III
102
7
5
4
3
2
IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TEMPERATURE (°C)
103
7
5
3
2
NO FINS
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
INSULATED TYPE, PLANAR PASSIVATION TYPE
CASE TEMPERATURE (°C)
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
4
2
6
0
8
10
12
14
AMBIENT TEMPERATURE (°C)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
16
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
4
2
6
0
40
20
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
100 (%)
0
103
7
5
4
3
2
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
12
14
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
RMS ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
16
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
60
LACHING CURRENT (mA)
AMBIENT TEMPERATURE (°C)
80
10
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
8
103
7
5
3
2
DISTRIBUTION
102
7
5
3
2
101
7
5
3
2
T2+, G–
TYPICAL
EXAMPLE
T2+, G+  TYPICAL

T2– , G–  EXAMPLE
100
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
160
TYPICAL EXAMPLE
Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
7
5
3
2
SUPPLY
VOLTAGE
(di/dt)c
TIME
MAIN
VOLTAGE
(dv/dt)c
101
7
5
TIME
VD
MINIMUM
CHARACTERISTICS
VALUE
3
2
100
7
100
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
TIME
MAIN CURRENT
100 (%)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µ s)
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
140
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
I QUADRANT
III QUADRANT
5 7 101
2 3
2 3
103
7
5
4
3
2
TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
A
6V
A
6V
RG
V
TEST PROCEDURE 1
V
RG
TEST PROCEDURE 2
6Ω
A
6V
V
RG
TEST PROCEDURE 3
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
The product guaranteed maximum junction
temperature 150°C (See warning.)
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
BCR10PM
Dimensions
in mm
10.5 MAX
2.8
8.5
17
5.0
1.2
5.2
TYPE
NAME
φ3.2±0.2
VOLTAGE
CLASS
13.5 MIN
3.6
1.3 MAX
0.8
2.54
IT (RMS) ...................................................................... 10A
VDRM ....................................................................... 600V
IFGT !, IRGT !, IRGT # ............................................ 20mA
Viso ........................................................................ 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
123
0.5
2.6
∗ Measurement point of
case temperature
4.5
•
•
•
•
•
2.54
2
1
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, small motor control,
copying machine, electric tool, solenoid drivers, other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Symbol
Parameter
Conditions
Ratings
Unit
IT (RMS)
RMS on-state current
Commercial power frequency, sine full wave 360° conduction, Tc=110°C
ITSM
Surge on-state current
I2t
I2t
PGM
Peak gate power dissipation
5
W
PG (AV)
Average gate power dissipation
0.5
W
VGM
Peak gate voltage
10
V
IGM
Peak gate current
2
Tj
Junction temperature
Tstg
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
41.6
A2s
Storage temperature
—
Viso
for fusing
10
Weight
Typical value
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
A
–40 ~ +150
°C
–40 ~ +150
°C
2.0
g
2000
V
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=150°C, VDRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
!
VFGT !
VRGT !
Gate trigger voltage ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
1.5
V
IFGT !
!
—
—
20
mA
—
—
20
mA
—
—
20
mA
0.2/0.1
—
—
V
—
—
3.5
°C/ W
10/1
—
—
V/µs
IRGT !
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C/150°C, VD=1/2VDRM
Rth (j-c)
Thermal resistance
Junction to case ✽3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
✽4
Tj=125°C/150°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
MAIN CURRENT
3. Peak off-state voltage
VD=400V
MAIN
VOLTAGE
TIME
(di/dt)c
TIME
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
MAXIMUM ON-STATE CHARACTERISTICS
100
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ON-STATE VOLTAGE (V)
4.0
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
GATE VOLTAGE (V)
5
3
2 VGM = 10V
101
7
5
3
2
PGM = 5W
PG(AV) =
0.5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
IRGT I
IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
100 (%)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
103
TYPICAL EXAMPLE
7
5
3
IRGT I, IRGT III
2
102
IFGT I
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TEMPERATURE (°C)
103
7
5
3
2
NO FINS
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
INSULATED TYPE, PLANAR PASSIVATION TYPE
CASE TEMPERATURE (°C)
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
2
6
0
4
8
10
12
14
AMBIENT TEMPERATURE (°C)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
16
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY
REGARDLESS OF
120
CONDUCTION
100
ANGLE
120 120 t2.3
80
100 100 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
2
6
0
4
40
20
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
100 (%)
0
103
7
5
4
3
2
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
12
14
7
5
3
2
TYPICAL EXAMPLE
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
RMS ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
16
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
60
10
106
LACHING CURRENT (mA)
AMBIENT TEMPERATURE (°C)
80
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS,CURVES
APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
100
LOADS
60 60 t2.3
103
7
5
3
2
DISTRIBUTION
102
7
5
3
2
101
7
5
3
2
T2+, G–
TYPICAL
EXAMPLE
T2+, G+  TYPICAL

T2– , G–  EXAMPLE
100
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
160
TYPICAL EXAMPLE
140
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
160
TYPICAL EXAMPLE
Tj = 125°C
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
160
TYPICAL EXAMPLE
Tj = 150°C
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µ s)
JUNCTION TEMPERATURE (°C)
7
5
3
2
SUPPLY
VOLTAGE
MAIN
VOLTAGE
(dv/dt)c
101
7
5
TIME
VD
MINIMUM
CHARACTERISTICS
VALUE
3
2
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
TIME
(di/dt)c
TIME
MAIN CURRENT
I QUADRANT
III QUADRANT
100
7 0
10
2 3
5 7 101
2 3
5 7 102
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
7
5
3
2
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
101
7
5
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
3
2
100
7
100
MINIMUM
CHARACTERISTICS
VALUE
2 3
5 7 101
2 3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µ s)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
140
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
INSULATED TYPE, PLANAR PASSIVATION TYPE
103
7
5
4
3
2
TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µ s)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
6Ω
LOAD
A
6V
RG
V
TEST PROCEDURE 1
C1
A
6V
V
RG
TEST PROCEDURE 2
R1
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0
R0
C0 = 0.1µF
R0 = 100Ω
6Ω
A
6V
V
RG
TEST PROCEDURE 3
Mar. 2002
Similar pages