IXYS IXGK50N60B Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXGH
IXGK
IXGT
IXGJ
50N60B
50N60B
50N60B
50N60B
VCES
IC25
= 600
= 75
= 2.3
VCE(sat)
tfi(typ)
= 120
V
A
V
ns
TO-247 AD (IXGH)
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
50
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 100
@ 0.8 VCES
A
PC
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Mounting torque
TO-247AD
TO-264
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
C (TAB)
E
TO-268 (D3) ( IXGT)
G
C (TAB)
E
TJ
Md
C
Maximum Ratings
6
10
4
IC
= 250µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2002 IXYS All rights reserved
g
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVCES
TJ = 25°C
TJ = 125°C
G
C
E
(TAB)
TO-264 AA (IXGK)
G
C
°C
300
TO-247
TO-264
TO-268
Test Conditions
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TO-268 Leaded (IXGJ)
V
5.0
V
200
1
µA
mA
±100
nA
2.3
V
G = Gate
E = Emitter
E
C (TAB)
D = Drain
TAB = Collector
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOSTM process
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(insulated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
95585F(12/02)
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. m a x .
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
25
4100
VCE = 25 V, VGE = 0 V, f = 1 MHz
QG
pF
95
pF
160
nC
30
nC
55
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
QGC
td(on)
Inductive load, TJ = 25°°C
50
ns
tri
IC = IC90, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
50
ns
td(off)
tfi
Eoff
td(on)
tri
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
TO-268 (IXGT) Outline
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
250
ns
3.0
4.5
mJ
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
50
ns
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
50
ns
3
mJ
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
200
ns
250
ns
4.2
mJ
0.42
TO-247 & TO-268 leaded packages
TO-264 package
Dim.
120
RthJC
RthCK
ns
Terminals:
1 - Gate
2 -Collector
3 -Emitter
Tab-Collector
250
Inductive load, TJ = 125°°C
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
3
150
IC = IC90, VGE = 15 V
Eon
2
pF
310
Cres
QGE
S
1
Cies
Coes
42
TO-247 AD (IXGH) Outline
0.25
0.15
TO-264 AA (IXGK) Outline
K/W
K/W
K/W
TO-268 (IXGJ) Leaded Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Terminals:
1 - Gate
2Collector
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
100
200
VGE = 15V
13V
11V
9V
TJ = 25°C
7V
60
40
1
2
3
4
7V
80
40
5V
0
5V
0
5
0
2
4
VCE - Volts
6
8
VCE - Volts
Figure 4. Temperature Dependence of VCE(sat)
100
1.6
TJ = 125°C V = 15V
GE
13V
11V
VGE = 15V
VCE (sat) - Normalized
9V
7V
60
40
5V
20
0
0
1
2
3
4
1.2
IC = 50A
1.0
IC = 25A
0.8
0.6
0.4
25
5
IC = 100A
1.4
50
75
VCE - Volts
100
125
Figure 6. Capacitance Curves
10000
100
f = 1Mhz
VCE = 10V
Ciss
Capacitance - pF
80
60
40
TJ = 25°C
TJ = 125°C
1000
Coss
100
Crss
20
0
150
TJ - Degrees C
Figure 5. Admittance Curves
IC - Amperes
10
Figure 3. Saturation Voltage Characteristics
80
IC - Amperes
9V
120
20
0
11V
VGE = 15V
13V
160
IC - Amperes
IC - Amperes
80
TJ = 25°C
10
0
2
4
6
VGE - Volts
© 2002 IXYS All rights reserved
8
10
0
5
10
15
20
25
VCE-Volts
30
35
40
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
Figure 7. Dependence of EON and EOFF on IC
6
12
E(ON)
5
6
10
8
E(OFF)
3
6
2
4
1
E(ON)
4
8
E(ON)
3
6
20
40
60
80
4
E(OFF)
2
E(ON)
0
E(OFF)
IC = 50A
2
1
2
0
10
E(OFF)
IC = 100A
IC =25A
0
0
100
E(OFF) - millijoules
4
E(OFF) - milliJoules
RG = 4.7Ω
12
TJ = 125°C
5
E(ON) - millijoules
TJ = 125°C
E(ON) - millijoules
Figure 8. Dependence of EON and EOFF on RG
0
0
10
20
30
40
50
60
RG - Ohms
IC - Amperes
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
600
16
IC = 25A
VCE = 250V
100
IC - Amperes
VGE - Volts
12
8
TJ = 125°C
10
RG = 6.2 Ω
dV/dt < 5V/ns
1
4
0.1
0
0
40
80
120
160
0
200
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Figure 11. IGBT Transient Thermal Resistance
ZthJC (K/W)
1
0.1
D=0.5
D=0.2
0.01
D=0.1
D=0.05
D=0.02
D = Duty Cycle
D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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