Vishay BYT56 Fast avalanche sinterglass diode Datasheet

BYT56.
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
e2
949588
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Very fast rectification and switching diode
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Part
Type differentiation
Package
BYT56A
VR = 50 V; IFAV = 3 A
SOD-64
BYT56B
VR = 100 V; IFAV = 3 A
SOD-64
BYT56D
VR = 200 V; IFAV = 3 A
SOD-64
BYT56G
VR = 400 V; IFAV = 3 A
SOD-64
BYT56J
VR = 600 V; IFAV = 3 A
SOD-64
BYT56K
VR = 800 V; IFAV = 3 A
SOD-64
BYT56M
VR = 1000 V; IFAV = 3 A
SOD-64
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
Symbol
Value
Unit
BYT56A
VR = VRRM
50
V
BYT56B
VR = VRRM
100
V
BYT56D
VR = VRRM
200
V
BYT56G
VR = VRRM
400
V
BYT56J
VR = VRRM
600
V
BYT56K
VR = VRRM
800
V
BYT56M
VR = VRRM
1000
V
Peak forward surge current
tp = 10 ms, half sinewave
IFSM
80
A
Average forward current
on PC board
IFAV
1.5
A
l = 10 mm
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
Document Number 86032
Rev. 1.6, 13-Apr-05
I(BR)R = 0.4 A
IFAV
3
A
Tj = Tstg
- 55 to + 175
°C
ER
10
mJ
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BYT56.
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
25
K/W
on PC board with spacing
25 mm
RthJA
70
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 3 A
VF
1.4
V
Reverse current
VR = VRRM
IR
5
µA
VR = VRRM, Tj = 150 °C
IR
150
µA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
100
ns
Reverse recovery time
RthJA - Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
40
I FAV - Average Forward Current ( A )
3.5
30
20
l
l
10
TL= constant
0
0
5
10
15
20
25
2.5
2.0
1.5
1.0
RthJA = 70 K/W
PCB: d = 25 mm
0.5
0
30
l - Lead Length ( mm )
94 9462
V R = VRRM
half sinewave
R thJA = 25 K/W
l = 10 mm
3.0
0
Figure 1. Max. Thermal Resistance vs. Lead Length
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature ( ° C )
16366
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100
I R - Reverse Current ( µA )
I F - Forward Current ( A)
V R = VRRM
10
Tj =175°C
1
Tj = 25°C
0.1
0.01
0.001
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
V F - Forward Voltage ( V )
16365
Figure 2. Forward Current vs. Forward Voltage
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2
100
25
16367
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86032
Rev. 1.6, 13-Apr-05
BYT56.
Vishay Semiconductors
350
300
PR -Limit
@100 % VR
250
200
150
PR -Limit
@80 % VR
100
50
0
25
16368
90
V R = VRRM
400
CD - Diode Capacitance ( pF )
PR - Reverse Power Dissipation ( mW )
450
50
75
100
125
150
70
60
50
40
30
20
10
0
0.1
175
Tj - Junction Temperature ( °C )
f = 1 MHz
80
1
16369
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
10
100
V R - Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1.014) min.
Document Number 86032
Rev. 1.6, 13-Apr-05
4.0 (0.156) max.
26 (1.014) min.
94 9587
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3
BYT56.
Vishay Semiconductors
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1. Meet all present and future national and international statutory requirements.
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systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
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Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
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Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 86032
Rev. 1.6, 13-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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