Hanbit HMD8M32M4EG-6 32mbyte(8mx32) 72-pin edo mode 4k ref. simm design 5v Datasheet

HANBit
HMD8M32M4EG
32Mbyte(8Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
Part No. HMD8M32M4E, HMD8M32M4EG
GENERAL DESCRIPTION
The HMD8M32M4E is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M
x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components.
The module is a single In-line memory module with edge connections and is intended for mounting in to 72-pin edge
connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs
are TTL-compatible.
FEATURES
PIN ASSIGNMENT
w Part Identification
HMD8M32M4E----4K Cycles/64ms Ref. Solder
PIN
HMD8M32M4EG- 4K Cycles/64ms Ref. Gold
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
Vss
25
DQ22
49
DQ8
w Access times : 50, 60ns
2
DQ0
26
DQ7
50
DQ24
w High-density 32MByte design
3
DQ16
27
DQ23
51
DQ9
w Single +5V ± 0.5V power supply
4
DQ1
28
A7
52
DQ25
w JEDEC Standard pinout
5
DQ17
29
A11
53
DQ10
w EDO mode operation
6
DQ2
30
Vcc
54
DQ26
w TTL compatible inputs and outputs
7
DQ18
31
A8
55
DQ11
w FR4-PCB design
8
DQ3
32
A9
56
DQ27
OPTIONS
MARKING
w Timing
9
DQ19
33
NC
57
DQ12
10
Vcc
34
NC
58
DQ28
11
NC
35
NC
59
Vcc
50ns access
-5
12
A0
36
NC
60
DQ29
60ns access
-6
13
A1
37
NC
61
DQ13
14
A2
38
NC
62
DQ30
15
A3
39
Vss
63
DQ14
16
A4
40
/CAS0
64
DQ31
17
A5
41
/CAS2
65
DQ15
18
A6
42
/CAS3
66
NC
19
A10
43
/CAS1
67
PD1
w Packages
72-pin SIMM
M
PRESENCE DETECT PINS
Pin
50ns
60ns
PD1
NC
NC
20
DQ4
44
/RAS0
68
PD2
PD2
Vss
Vss
21
DQ20
45
/RAS1
69
PD3
PD3
Vss
NC
22
DQ5
46
NC
70
PD4
PD4
Vss
NC
23
DQ21
47
/WE
71
NC
24
DQ6
48
NC
72
Vss
PERFORMANCE RANGE
Speed
tRAC
tCAC
tRC
tHPC
5
50ns
13ns
90ns
26ns
6
60ns
15ns
110ns
30ns
URL:www.hbe.co.kr
REV.1.0 (August. 2002)
-1-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
FUNCTIONAL BLOCK DIAGRAM
DQ0
/RAS0
/CAS0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U1 DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
/RAS
/LCAS
/CAS1
/UCAS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/OE
/W
/RAS
/CAS2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
/UCAS
DQ10
DQ11
DQ12
/OE
DQ13
DQ14
/W
A0-A11 DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ16-31
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/RAS1
/CAS0
/LCAS
/CAS1
/UCAS
/OE
/W
/LCAS
/CAS3
/RAS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A0-A11
U3
/RAS0
DQ0-15
U4
A0-A11
U6
/RAS
/RAS1
/LCAS
/CAS2
/UCAS
/CAS3
/OE
/W
A0-A11
/WE
A0-A11
Vcc
Vss
URL:www.hbe.co.kr
REV.1.0 (August. 2002)
0.1uf or 0.22uf Capacitor
for each DRAM
-2-
To all DRAMs
HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN ,OUT
-1V to 7.0V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 7.0V
Power Dissipation
PD
4W
TSTG
-55oC to 150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Short Circuit Output Current
IOS
50mA
w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
VIH
2.4
-
Vcc+1
V
Input Low Voltage
VIL
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
SPEED
MIN
MAX
UNITS
ICC1
-5
-
816
Ma
-6
-
736
MA
ICC2
Don't care
-
32
MA
ICC3
-5
-
816
MA
-6
-
736
MA
-5
-
896
MA
-6
-
816
MA
ICC5
Don't care
-
16
MA
ICC6
-5
-
816
MA
-6
-
736
MA
Il(L)
-80
80
µA
IO(L)
-10
10
µA
VOH
2.4
-
V
VOL
-
0.4
V
ICC4
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.)
ICC2 : Standby Current ( /RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min )
ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
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REV.1.0 (August. 2002)
-3-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V)
IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V
VOH : Output High Voltage Level (IOH= -5mA )
VOL : Output Low Voltage Level (IOL = 4.2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( TA=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
CIN1
-
100
pF
Input Capacitance (/W)
C IN2
-
130
pF
Input Capacitance (/RAS0)
CIN3
-
40
pF
Input Capacitance (/CAS0-/CAS3)
CIN4
-
30
pF
Input/Output Capacitance (DQ0-31)
CDQ1
-
20
pF
AC CHARACTERISTICS
o
( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.)
-5
STANDARD OPERATION
-6
SYMBOL
UNIT
MIN
MAX
MAX
Random read or write cycle time
tRC
Access time from /RAS
tRAC
50
60
ns
Access time from /CAS
tCAC
13
15
ns
Access time from column address
tAA
25
30
ns
/CAS to output in Low-Z
tCLZ
3
Output buffer turn-off delay
tOFF
3
13
3
13
ns
Transition time (rise and fall)
tT
2
50
2
50
ns
/RAS precharge time
tRP
30
/RAS pulse width
tRAS
50
/RAS hold time
tRSH
13
15
ns
/CAS hold time
tCSH
38
45
ns
/CAS pulse width
tCAS
8
10K
10
10K
ns
/RAS to /CAS delay time
tRCD
20
37
20
45
ns
/RAS to column address delay time
tRAD
15
25
15
30
ns
/CAS to /RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
URL:www.hbe.co.kr
REV.1.0 (August. 2002)
90
MIN
-4-
110
ns
3
ns
40
10K
60
ns
10K
ns
HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
Column address hold time
tCAH
8
10
ns
Column Address to /RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
Write command hold time
tWCH
10
10
ns
Write command hold referenced to /RAS
tWCR
50
55
ns
Write command pulse width
tWP
10
10
ns
Write command to /RAS lead time
tRWL
13
10
ns
Write command to /CAS lead time
tCWL
8
10
ns
Data-in set-up time
tDS
0
0
ns
Data-in hold time
tDH
8
10
ns
Refresh period
tREF
Write command set-up time
tWCS
0
0
ns
/CAS setup time (C-B-R refresh)
tCSR
5
5
ns
/CAS hold time (C-B-R refresh)
tCHR
10
10
ns
/RAS precharge to /CAS hold time
tRPC
5
5
ns
Access time from /CAS precharge
tCPA
/CAS precharge time (Fast page)
tCP
8
/RAS pulse width (Fast page )
tRASP
50
/W to /RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
tWRH
10
10
ns
64
ns
64
30
35
10
200K
60
ns
ns
ns
200K
ns
NOTES
1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 1TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC.
5.Assumes that tRCD ≥ tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH
or VOL.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If tWCS ≥ tWCS(min) the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles.
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference
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REV.1.0 (August. 2002)
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HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE
/RAS
tRC
tRAS
VIH-
tRP
VILtCRP
/UCAS,/LCAS
tCRP
tRSH
VIH-
tCAS
tRAD
VILtASR
A
tCSH
tRCD
tRAH
tCAH
tASC
tRAL
VIHVIL-
ROW ADDRESS
COLUMN ADDRESS
tRCS
/W
tRRH
tRCH
VIHVIL-
tWEZ
tCEZ
tAA
/OE VIHVIL-
tOEZ
tOEA
tCAC
tCLZ
tRAC
DQ0-DQ15 VOHVOL-
DATA-OUT
OPEN
TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE)
NOTE : Dout = Open
/RAS
tRC
VIH-
tRP
tRAS
VILtCRP
VIH/UCAS,/LCAS V
IL-
VIH-
tCRP
tRSH
tCAS
tRAD
tASR
tRAH
VIHA VIL-
tCSH
tRCD
ROW ADDRESS
tCAH
tASC
tRAL
COLUMN ADDRESS
tCWL
tRWL
tWCS
tWCH
tWP
/W VILVIH/OE VILVOHDQ0-DQ15 VOL-
URL:www.hbe.co.kr
REV.1.0 (August. 2002)
tDS
tDH
DATA-IN
-6-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M32M4EG
PACKAGING INFORMATION
107.95 mm
101.19 mm
R1.57 mm
3.38 mm
R3.18±0.51m
18.52mm
10.16 mm
6.35 mm
R1.57±10 mm
6.35 mm
2.03
6.5mm
95.25 mm
7.68
MAX
2.54 mm
0.25 mm MAX
MIN
Gold : 1.04±0.10 mm
1.27
Solder:0.914±0.10mm
1.29±0.08 mm
ORDERING INFORMATION
Part Number
Density
Org.
Package
Vcc
SPEED
HMD8M32M4EG-5
32MByte
8MX 32bit
72 Pin-SIMM
5.0V
50ns
HMD8M32M4EG-6
32MByte
8MX 32bit
72 Pin-SIMM
5.0V
60ns
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REV.1.0 (August. 2002)
-7-
HANBit Electronics Co.,Ltd.
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