Astec AS1004-2.5S Micropower voltage reference Datasheet

AS1004
Micropower Voltage Reference
Features
Description
•
•
The AS1004 is a two-terminal precision band-gap voltage
reference with a low turn-on current of 10 µA.
Low voltage reference
10 µA turn-on current for
AS1004-1.2
•
20 µA turn-on current for
AS1004-2.5
•
± 4 mV (0.3 %) initial accuracy
for AS1004-1.2
•
± 20 mV (0.8 %) initial accuracy
for AS1004-2.5
•
Guaranteed operation to 20 mA.
Over three orders of magnitude
of operating current!
•
Temperature performance
guaranteed
•
Very low dynamic impedance
Pin Configuration —
Emulating a 1.235 V zener diode, the AS1004 operates more
than three orders of magnitude of output current with minute
output impedance and guaranteed stability. With an initial
tolerance of ± 4 mV and guaranteed temperature performance, it is ideal for precision instrumentation, especially in
low power applications. Being a low-voltage reference, the
AS1004 is also well-suited as a reference for low-voltage
power supply applications, especially in power supplies
intended for low-voltage logic systems, laptop computers
and other portable or battery operated equipment.
The AS1004 is pin-for-pin compatible with the LT1004 and
the LM385 and offers improved specifications over both the
LM385 and the MP5010. It is also available as a 2.5 V
reference with a guaranteed start-up current of 20 µA.
Top view
TO-92 (LP)
SOIC (D)
SOT-89 (S)
N/C
1
8
CATHODE
N/C
2
7
N/C
N/C
3
6
CATHODE
ANODE
4
5
ANODE
N/C
ANODE
ANODE
CATHODE
N/C
CATHODE
Ordering Information
Description
Temperature Range
Order Codes
TO-92
0 to 70° C
AS1004-1.2LP
AS1004-2.5LP
8-Pin Plastic SOIC
0 to 70° C
AS1004-1.2D
AS1004-2.5D
SOT-89
0 to 70° C
AS1004-1.2S
AS1004-2.5S
© ASTEC Semiconductor
29
Micropower Voltage Reference
AS1004
Simplified Schematic
K
R2
Q13
Q4
Q12
Q3
C2
R10
Q7
R4
Q11
C1
C3
R11
Q5
Q1
Q10
R12
Q9
Q8
Q6
R6
R7
Q14
A
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Reverse Breakdown Current
IZ
30
mA
Forward Current
IF
30
mA
Continuous Power Dissipation at 25° C
PD
TO-92
775
mW
8LSOIC
750
mW
SOT-89
1000
mW
TJ
150
°C
TSTG
– 65 to 150
°C
TL
300
°C
Maximum Junction Temp
Storage Temperature
Lead Temperature, Soldering 10 Seconds
Typical Thermal Resistances
Recommended Conditions
Parameter
Cathode Current
ASTEC Semiconductor
θJA
θJC
Typical Derating
TO-92
160° C/W
80° C/W
6.3 mW/°C
8L SOIC
175° C/W
45° C/W
5.7 mW/°C
SOT-89
110° C/W
8° C/W
9.1 mW/°C
Symbol
Rating
Unit
Package
IZ
100
µA
30
Micropower Voltage Reference
AS1004
Electrical Characteristics
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based
on power dissipation and package thermal characteristics.
Test Condition
Reverse Breakdown Voltage
VZ
IZ = 100 µA, TJ = 25° C
1.231
1.235
1.239
2.480
2.500
2.520
V
0° C ≤ TA ≤ 70° C
1.225
1.235
1.245
2.470
2.500
2.530
V
∆VZ /∆T
Minimum Operating Current
IZ (min)
Reverse Breakdown Voltage
Change With Current
∆VZ /∆IZ
Imin ≤ IZ ≤ 20 mA
Reverse Dynamic Impedance ZZ
Wide Band Noise
en
∆VZ /∆T
Long Term Stability
Min
AS1004-2.5
Typ
Max
Symbol
Average Temperature
Coefficient
Min
AS1004-1.2
Typ
Max
Parameter
20
60
Unit
ppm/°C
4
10
12
20
µA
Imin ≤ IZ ≤ 1 mA
0.5
1
0.5
1
mV
Over Temperature
0.5
1.5
0.5
1.5
mV
1 mA ≤ IZ ≤ 20 mA
6.5
10
6.5
10
mV
Over Temperature
6.5
20
6.5
20
mV
IZ = 100 mA, f = 25 Hz
0.2
0.6
0.8
0.9
Ω
Over Temperature
1
1.5
1.5
Ω
IZ = 100 µA
10 Hz ≤ f ≤ 10 KHz
60
60
µV
IZ = 100 µA
TA = 25° C ± 0.1° C
20
60
ppm/kH
Typical Performance Curves
AS1004-1.2 Reference Voltage vs.
Ambient Temperature
Calculating Average Temperature
Coefficient for the AS1004-1.2 Reference
0
mV
IZ = 100 µA
0
∆VREF
∆T
V Z – Reference Voltage (V)
0
%
ppm
1.245
-5
5000
0.5
-10
0
10
20
30
40
50
60 70
Temperature (°C)
1.240
1.235
1.230
0.025 mV/ °C
1.225
0.002 %/ °C
20 ppm/ °C
Average Temperature Coefficient =
∆VREF
∆T
–55 –35
Figure 1
ASTEC Semiconductor
–15 5
25
45 65 85
TA – Ambient Temperature (°C)
Figure 2
31
105
125
Micropower Voltage Reference
AS1004
Typical Performance Curves
0
0
AS1004-2.5 Reference Voltage
versus Ambient Temperature
2.520
mV
%
ppm
Calculating Average Temperature
Coefficient for the AS1004-2.5 Reference
IZ = 100 µA
0
∆VREF
V Z – Reference Voltage (V)
∆T
-5
5000
0.5
-10
0
10
20
30
40
50
60 70
Temperature (°C)
2.510
2.500
2.490
0.046 mV/ °C
0.004 %/ °C
37 ppm/ °C
Average Temperature Coefficient =
2.480
∆VREF
∆T
–55 –35
Figure 4
AS1004-1.2 Reverse Operating
Characteristics
AS1004-2.5 Reverse Operating
Characteristics
125
100
TA = –55° C to 125° C
TA = –55° C to 125° C
IR – Reverse Current (µA)
IR – Reverse Current (µA)
105
Figure 3
100
10
1
0.1
–15 5
25
45 65 85
TA – Ambient Temperature (°C)
0
0.2
0.4
0.8
0.6
1
VR – Reverse Voltage (V)
1.2
1
0.1
1.4
Figure 5
ASTEC Semiconductor
10
0
0.5
1.0
1.5
2.0
VR – Reverse Voltage (V)
Figure 6
32
2.5
3.0
Micropower Voltage Reference
AS1004
Typical Performance Curves
AS1004-1.2 Change in Reference
Voltage versus Reverse Current
AS1004-2.5 Change in Reference
Voltage versus Reverse Current
16
16
TA = –55° C to 125° C
∆VZ – Change In Reference Voltage (mA)
∆VZ – Change In Reference Voltage (mA)
TA = –55° C to 125° C
12
8
4
0
–4
0.01
0.1
1
10
IR – Reverse Current (mA)
12
8
4
0
–4
0.01
100
0.1
1
10
IR – Reverse Current (mA)
Figure 7
Figure 8
AS1004-1.2 Transient Response
AS1004-2.5 Transient Response
1.5
3
OUTPUT
36 kΩ
VI
0.5
VO
0
5
INPUT
0
50
36 kΩ
VI
VO
1
0
5
INPUT
100
500
0
600
t – Time (µs)
0
50
t – Time (µs)
Figure 10
Figure 9
ASTEC Semiconductor
OUTPUT
2
Input and Output Voltage (V)
Input and Output Voltage (V)
1
0
100
33
100
500
600
Micropower Voltage Reference
AS1004
Typical Performance Curves
AS1004-1.2 Reverse Dynamic
Impedance
AS1004-2.5 Reverse Dynamic
Impedance
10 k
10 k
tZ = 100 µA
TA = 25° C
1k
ZZ – Reference Impedance (Ω)
ZZ – Reference Impedance (Ω)
tZ = 100 µA
TA = 25° C
100
10
1
0.1
0.01
0.1
1
10
f = Frequency (kHz)
100
1k
100
10
1
0.1
0.01
1k
Figure 11
100
1k
Low Frequency Reverse Dynamic
Impedance
100
1.2
TA = –55° C to 125° C
f = 25 Hz
ZZ – Reference Impedance (Ω)
TA = 25° C
V F – Forward Voltage (V)
1
10
f = Frequency (kHz)
Figure 12
Forward Characteristics
0.8
0.4
0
0.01
0.1
0.1
1
10
IF = Forward Current (mA)
1
0.1
0.01
100
Figure 13
ASTEC Semiconductor
10
0.1
1
10
IZ – Reverse Current (mA)
Figure 14
34
100
Micropower Voltage Reference
AS1004
Typical Applications
2.5V Reference
1.235V Reference
Low Noise Reference
VIN
VIN
VIN
3k
100 k
100 k
22 Ω
OUT
OUT
AS1004-1.2
OUT
AS1004-2.5
AS1004-2.5
Figure 15
Figure 16
Variable Output
Regulator
V
Figure 17
High Stability 5V Regulator
VIN ≥ 8 V
IN
VIN
LM317
VOUT
VIN
OUT
ADJ
LM338
VOUT
5 V OUT
ADJ
200 Ω
0.1 µF
50 µF
976 Ω, 1%
+
+
10 µF
22 µF
5k
AS1004-2.5
AS1004-2.5
R≤
324 Ω, 1%
V - – 1V
0.015 mA
V-
Figure 18
Figure 19
Lead Acid Low Battery Detector
Micropower 10V Reference
VIN = 12 V to 20 V
LO = Battery Low
86.7 k
500 k
1M
+
12 V
3
–
500 k
LM4250
2 –
4
150 pF
AS1004-1.2
6
8
22 M
150 pF
AS1004-1.2
Figure 20
ASTEC Semiconductor
7
+
500 k
Figure 21
35
3.5 M
Micropower Voltage Reference
AS1004
Notes
ASTEC Semiconductor
36
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