Pan Jit MMSZ4700-V Surface mount silicon zener diode Datasheet

MMSZ4687-V SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE
4.3 to 43 Volts
POWER
Unit: inch (mm)
SOD-123
500 mWatts
FEATURES
• 500mW Power Dissipation
.110(2.8)
.098(2.5)
.008(.20)MAX
• In compliance with EU RoHS 2002/95/EC directives
.053(1.35)
.037(0.95)
.028(0.7)
.019(0.5)
• Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
• Case: SOD-123, Molded Plastic
.071(1.8)
.055(1.4)
.154(3.90)
.141(3.60)
• Planar Die construction
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
.016(.40)MIN
.005(.12)MAX
• Approx. Weight: 0.01grams
• Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Value
Units
Maximum Power Dissipation @TA=25OC (Notes A)
PD
500
mW
Operating Junction and StorageTemperature Range
TJ
-50 to +150
O
C
NOTES:
A. Mounted on 5.0mm 2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
STAD-FEB.14.2007
PAGE . 1
MMSZ4687-V SERIES
Nominal Zener Voltage
Part Number
Max Reverse
Leakage Current
Max. Zener Impedance
V Z @ IZT
Z ZT@ IZT
I R @ VR
Z ZK @ IZK
Marking
C ode
No m. V
M i n. V
M a x. V
Ω
mA
Ω
mA
µA
V
MMSZ4687-V
4.3
4.09
4.52
-
0.05
-
-
4
2
CP
MMSZ4688-V
4.7
4.47
4.94
-
0.05
-
-
10
3
CT
MMSZ4689-V
5.1
4.85
5.36
-
0.05
-
-
10
3
CU
MMSZ4690-V
5.6
5.32
5.88
-
0.05
-
-
10
4
CV
MMSZ4691-V
6.2
5.89
6.51
-
0.05
-
-
10
5
CA
MMSZ4692-V
6.8
6.46
7.14
-
0.05
-
-
10
5.1
CX
MMSZ4693-V
7.5
7.13
7.88
-
0.05
-
-
10
5.7
CY
MMSZ4694-V
8.2
7.79
8.61
-
0.05
-
-
1
6.2
CZ
MMSZ4695-V
8.7
8.27
9.14
-
0.05
-
-
1
6.6
DC
MMSZ4696-V
9.1
8.65
9.56
-
0.05
-
-
1
6.9
DD
MMSZ4697-V
10
9.50
10.50
-
0.05
-
-
1
7.6
DE
MMSZ4698-V
11
10.50
11.60
-
0.05
-
-
0.05
8.4
DF
MMSZ4699-V
12
11.40
12.60
-
0.05
-
-
0.05
9.1
DH
MMSZ4700-V
13
12.40
13.70
-
0.05
-
-
0.05
9.8
DJ
MMSZ4701-V
14
13.30
14.70
-
0.05
-
-
0.05
10.6
DK
MMSZ4702-V
15
14.30
15.80
-
0.05
-
-
0.05
11.4
DM
MMSZ4703-V
16
15.20
16.80
-
0.05
-
-
0.05
12.1
DN
MMSZ4704-V
17
16.20
17.90
-
0.05
-
-
0.05
12.9
DP
MMSZ4705-V
18
17.10
18.90
-
0.05
-
-
0.05
13.6
DT
MMSZ4706-V
19
18.10
20.00
-
0.05
-
-
0.05
14.4
DU
MMSZ4707-V
20
19.00
21.00
-
0.05
-
-
0.01
15.2
DV
MMSZ4708-V
22
20.90
23.10
-
0.05
-
-
0.01
16.7
DA
MMSZ4709-V
24
22.80
25.20
-
0.05
-
-
0.01
18.2
DZ
MMSZ4710-V
25
23.80
26.30
-
0.05
-
-
0.01
19
DY
MMSZ4711-V
27
25.70
28.40
-
0.05
-
-
0.01
20.4
EA
MMSZ4712-V
28
26.60
29.40
-
0.05
-
-
0.01
21.2
EC
MMSZ4713-V
30
28.50
31.50
-
0.05
-
-
0.01
22.8
ED
MMSZ4714-V
33
31.40
34.70
-
0.05
-
-
0.01
25
EE
MMSZ4715-V
36
34.20
37.80
-
0.05
-
-
0.01
27.3
EF
MMSZ4716-V
39
37.10
41.00
-
0.05
-
-
0.01
29.6
EH
MMSZ4717-V
43
40.90
45.20
-
0.05
-
-
0.01
32.6
EJ
STAD-FEB.14.2007
PAGE . 2
MMSZ4687-V SERIES
Typical Characteristics
TKVZ - Temperature Coefficient of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
Tamb = 25 °C unless otherwise specified
600
500
400
300
200
100
0
0
40
80
120
200
160
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
10
5
IZ = 5 mA
0
-5
10
0
200
CD - Diode Capacitance (pF)
Tj = 25 °C
100
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
0
1
0
5
10
15
0
25
20
5
15
20
25
Figure 5. Diode Capacitance vs. Z-Voltage
100
1.3
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
-4
8 x 10 /K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0
0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
IF - Forward Current (mA)
VZtn - Relative Voltage Change
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
0.8
- 60
10
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
10
Tj = 25 °C
1
0.1
0.01
0.001
0
60
120
180
240
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
STAD-FEB.14.2007
50
20
40
30
VZ - Z-Voltage (V)
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
VZ - Voltage Change (mV)
15
0
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
PAGE . 3
MMSZ4687-V SERIES
rZ - Differential Z-Resistance (Ω)
100
IZ - Z-Current (mA)
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0
4
6
12
8
1000
20
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
5
VZ - Z-Voltage (V)
10
15
20
25
VZ - Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance vs. Z-Voltage
IZ - Z-Current (mA)
50
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
0
15
20
25
35
30
VZ - Z-Voltage (V)
Zthp - Thermal Resistance for Pulse Cond. (KW)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
10
RthJA = 300 K/W
T = Tjmax - Tamb
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
1
10-1
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
102
tP - Pulse Length (ms)
Figure 10. Thermal Response
STAD-FEB.14.2007
PAGE . 4
MMSZ4687-V SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.01.2006
PAGE . 5
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