NUF3102MU Low Capacitance 3 Line EMI Filter with ESD Protection in UDFN8 Package This device is a 3 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF3102MU has a cut−off frequency of 150 MHz and can be used in applications for data rate up to 58 MHz or 116 Mbps. This UDFN package is specifically designed to enhance EMI filtering for low−profile or slim design electronics especially where space and height is a premium. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all capacitors. www.onsemi.com R1 1 8 Cd Cd R2 2 7 Cd Cd R1 3 6 Features • EMI Filtering and ESD Protection • Integration of 19 Discrete Components • Compliance with IEC61000−4−2 (Level 4) • • • • > 8 kV (Contact) > 15 kV (Air) UDFN Package, 1.2 x 1.8 mm Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C Human Body Model = 3B These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Cd Cd 5 (Top View) MARKING DIAGRAM 8 1 UDFN8 CASE 517AD 32 M G • Reduces EMI/RFI Emissions on a Data Line • Low Profile Package; Typical Height of 0.5 mm • Design−Friendly and Easy−to−Use Pin Configurations, • Cd 4 Benefits • • Cd 32 M G 1 = Specific Device Code = Month Code = Pb−Free Package PIN CONNECTIONS Particularly for Portable Electronics Integrated Solution Offers Cost and Space Savings in UDFN Package Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response Integrated Solution Improves System Reliability 1 4 8 5 Applications • • • • • • EMI Filtering and ESD Protection for Data Lines Keypad Interface and Protection for Portable Electronics Bottom Connector Interface for Mobile Handsets Notebook Computers and Digital Cameras LCD Display Interface in Mobile Handsets Camera Display Interface in Mobile Handsets ORDERING INFORMATION Device Package Shipping† NUF3102MUTAG UDFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 February, 2017 − Rev. 3 1 Publication Order Number: NUF3102MU/D NUF3102MU MAXIMUM RATINGS Parameter Symbol ESD Discharge IEC61000−4−2 Value VPP Unit kV Contact Discharge Machine Model Human Body Model 14 0.4 8.0 Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance R1 Resistance Max Unit 5.0 V 8.0 V 6.0 7.0 100 nA IR = 10 mA 85 100 115 R2 IR = 10 mA 40 47 54 Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 10 13 16 pF Cut−Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 150 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Measured at 25°C. 2. Total Line Capacitance is two times the Diode Capacitance (Cd). 3. 50 source and 50 load termination. www.onsemi.com 2 NUF3102MU TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 −5 −10 −10 −20 −20 S41 (dB) S21 (dB) −15 −25 −30 −30 −40 −35 −40 −50 −45 −50 1.0E+6 10.0E+6 100E+6 1.0E+9 −60 10.0E+6 10.0E+9 100E+6 10.0E+9 FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Insertion Loss Characteristic (P1−P8) (P3−P6) Figure 2. Analog Crosstalk Curve 1.10 2.0 1.08 1.06 1.5 RESISTANCE (%) NORMALIZED CAPACITANCE 1.0E+9 1.0 0.5 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0 0 1.0 2.0 3.0 4.0 0.90 −40 5.0 −20 0 20 40 60 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 3. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance Cd at 2.5 V) Figure 4. Typical Normalized Resistance over Temperature www.onsemi.com 3 80 NUF3102MU PACKAGE DIMENSIONS UDFN8, 1.8x1.2, 0.4P CASE 517AD ISSUE D A B D 2X 0.10 C PIN ONE REFERENCE 2X ÉÉÉ ÉÉÉ ÇÇ ÉÉ MOLD CMPD EXPOSED Cu NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A3 A1 E DETAIL B ALTERNATE CONSTRUCTIONS 0.10 C DIM A A1 A3 b D E e D2 E2 J K L L1 TOP VIEW 0.05 MIN A DETAIL B 0.05 C (A3) (0.10) 8X 0.05 C DETAIL A A1 NOTE 4 C SIDE VIEW L J DETAIL A 8X SEATING PLANE L1 D2 L 1 E2 SOLDERING FOOTPRINT* 8 K e e/2 1.10 DETAIL A OPTIONAL CONSTRUCTION 8X MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 1.80 BSC 1.20 BSC 0.40 BSC 0.90 1.10 0.20 0.30 0.19 REF 0.20 TYP 0.20 0.30 −−− 0.10 7X 8X 0.25 0.45 PACKAGE OUTLINE 8X b 0.10 C A B 0.05 C NOTE 3 1.50 BOTTOM VIEW 0.35 1 0.35 0.40 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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