Infineon IPD350N06LG Optimosâ® power-transistor Datasheet

IPD350N06L G
OptiMOS® Power-Transistor
Product Summary
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logicl level
V DS
60
V
R DS(on),max
35
mΩ
ID
29
A
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Type
IPD350N06L G
Package
PG-TO252-3-11
Marking
350N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
29
T C=100 °C
20
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C1)
116
Avalanche energy, single pulse
E AS
I D=29 A, R GS=25 Ω
80
mJ
Reverse diode dv /dt
dv /dt
I D=29 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
±20
V
68
W
-55 ... 175
°C
55/175/56
See figure 3
Rev. 1.1
page 1
2006-05-08
IPD350N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.2
minimal footprint
-
-
75
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=28 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
1
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=29 A
-
27
35
mΩ
V GS=4.5 V, I D=19 A
-
36
47
-
1.4
-
Ω
16
32
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=29 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.1
page 2
2006-05-08
IPD350N06L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
600
800
-
150
200
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
40
60
Turn-on delay time
t d(on)
-
6
9
Rise time
tr
-
21
32
Turn-off delay time
t d(off)
-
29
44
Fall time
tf
-
20
30
Gate to source charge
Q gs
-
2
3
Gate charge at threshold
Q g(th)
-
1
1.3
Gate to drain charge
Q gd
-
6
9
Switching charge
Q sw
-
8
11
Gate charge total
Qg
-
10
13
Gate plateau voltage
V plateau
-
4.2
-
Output charge
Q oss
-
6
7
-
-
29
-
-
116
-
0.98
1.3
V
-
40
50
ns
-
36
45
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=29 A, R G=11 Ω
pF
ns
Gate Charge Characteristics3)
V DD=30 V, I D=29 A,
V GS=0 to 5 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
3)
T C=25 °C
V GS=0 V, I F=29 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
Rev. 1.1
page 3
2006-05-08
IPD350N06L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
30
70
25
60
20
I D [A]
P tot [W]
50
40
15
30
10
20
5
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
101
limited by on-state
resistance
1 µs
2
10
0.5
10 µs
100
101
1 ms
DC
0.2
Z thJC [K/W]
I D [A]
100 µs
10 ms
0.1
0.05
10-1
0.02
0
10
0.01
single pulse
10-1
10-2
-1
10
0
1
10
10
2
10
V DS [V]
Rev. 1.1
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2006-05-08
IPD350N06L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
60
10 V
5.5 V
4V
3.5 V
3V
5V
50
60
I D [A]
40
R DS(on) [mΩ]
4.5 V
30
4V
4.5 V
40
5V
5.5 V
10 V
20
20
3.5 V
10
3V
0
0
0
1
2
0
3
10
20
V DS [V]
30
40
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
60
50
50
40
40
g fs [S]
I D [A]
30
30
20
20
10
10
175 °C
25 °C
0
0
0
1
2
3
4
5
V GS [V]
Rev. 1.1
0
10
20
30
40
50
60
I D [A]
page 5
2006-05-08
IPD350N06L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=29 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
100
2.5
80
2
60
V GS(th) [V]
R DS(on) [mΩ]
280 µA
98 %
40
1.5
28 µA
1
typ
20
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
102
175 °C 98%
25 °C
103
I F [A]
C [pF]
Ciss
175 °C
101
25 °C 98%
Coss
102
100
Crss
101
10-1
0
10
20
30
40
50
V DS [V]
Rev. 1.1
0
1
2
3
V SD [V]
page 6
2006-05-08
IPD350N06L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=29 A pulsed
parameter: T j(start)
parameter: V DD
102
12
30 V
10
12V
25 °C
48 V
8
V GS [V]
I AV [A]
100 °C
101
150 °C
6
4
2
100
0
100
101
102
103
0
5
t AV [µs]
10
15
20
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
75
V GS
Qg
V BR(DSS) [V]
70
65
V g s(th)
60
55
Q g (th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.1
page 7
2006-05-08
IPD350N06L G
PG-TO252-3: Outline
packaging:
Rev. 1.1
page 8
2006-05-08
IPD350N06L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office ( www.infineon.com ).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.1
page 9
2006-05-08
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