Fuji FMV10N60E N-channel silicon power mosfet Datasheet

FMV10N60E
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Equivalent circuit schematic
TO-220F(SLS)
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Drain-Source Voltage
Characteristics
600
600
±10
±40
±30
10
416
6.0
4.4
100
2.16
60
150
-55 to + 150
2
Tch
Tstg
VISO
Operating and Storage Temperature range
Isolation Voltage
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
kVrms
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
I AV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS =0V
I D =250µA, VDS =VGS
VDS =600V, VGS =0V
VDS =480V, VGS =0V
VGS =±30V, VDS =0V
I D =5A, VGS =10V
I D =5A, VDS =25V
Tch =25°C
Tch =125°C
VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =5A
RG =15Ω
Vcc =300V
I D =10A
VGS =10V
L=3.05mH, Tch =25°C
I F =10A, VGS =0V, Tch =25°C
I F =10A, VGS =0V
-di/dt=100A/µs, Tch=25°C
min.
600
2.5
6
10
-
typ.
3.0
10
0.675
12
1800
140
10.5
20
9
100
18
47
10.5
13.5
0.86
0.51
5.4
max.
3.5
25
250
100
0.79
2700
210
16
30
13.5
150
27
70.5
16
20
1.30
-
Unit
V
V
min.
typ.
max.
2.083
58.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS =4A, L=47.7mH, Vcc=60V, RG =50Ω
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to Case
Channel to Ambient
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : I F ≤-I D, dv/dt=4.4kV/μs, Vcc≤BVDSS, Tch≤150°C.
1
FMV10N60E
80
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
Allowable Power Dissipation
PD=f(Tc)
2
10
t=
1µs
70
10µs
1
10
60
100µs
0
40
ID [A]
PD [W]
50
10
1ms
30
10
20
Power loss waveform :
Square w aveform
-1
PD
10
t
10
0
0
25
50
75
100
125
DC
-2
10
150
-1
0
1
10
10
VDS [V]
Tc [°C]
20
2
10
3
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 ° C
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 ° C
10
1
10
0
ID[A]
15
ID [A]
10
10
10
-1
10
-2
10
-3
10
-4
5
0
0
100
5
10
VDS [V]
15
20
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
1.3
2
3
4
VGS[V]
5
6
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 ° C
4.5V
VGS=4.0V
5V
1.2
1.1
RDS(on) [ Ω ]
gfs [S]
10
1
6V
1.0
10V
20V
0.9
0.8
0.7
0.1
0.6
0.01
0.01
0.5
0.1
1
10
0
100
5
10
ID [A]
ID [A]
2
15
20
FMV10N60E
2.5
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
6
5
VGS(th) [V]
2.0
1.5
RDS(on) [ Ω ]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
max.
1.0
typ.
0.5
4
max.
3
typ.
2
min.
1
0
0.0
-50
-25
0
25
50
Tch [°C]
75
100
125
-50
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25 ° C
-25
0
25
50
75
Tch [°C]
100
125
150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
20
18
10
4
10
3
10
2
10
1
10
0
16
14
12
480V
C [pF]
VGS [V]
Ciss
Vcc= 120V
300V
10
8
Coss
6
4
Crss
2
0
0
10
20
30
40
50
60
70
80
-2
10
10
-1
0
10
VDS [V]
Qg [nC]
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 ° C
3
10
10
1
2
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
10
td(off)
2
10
1
t [ns]
IF [A]
tf
td(on)
1
10
tr
0.1
0.01
0.00
0
0.25
0.50
0.75
1.00
1.25
10
1.50
10
VSD [V]
3
-1
0
10
10
1
10
2
FMV10N60E
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A
600
500
Zth(ch-c) [�C/W]
IAS =4A
EAV [mJ]
400
IAS =6A
300
200
IAS =10A
100
t [sec]
0
0
25
50
75
100
125
150
starting Tch [ C]
4
FMV10N60E
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
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Catalog, be sure to obtain the latest specifications.
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