STMICROELECTRONICS T830-800W

T820-xxxW
T830-xxxW
®
SNUBBERLESS TRIAC
FEATURES
■
■
■
■
■
ITRMS = 8 A
VDRM = VRRM = 600V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
A2
A1
G
DESCRIPTION
The T820/830W triacs use high performance glass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on
inductive and resistive loads.
G
A1
A2
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
Value
Unit
Tc= 95°C
8
A
tp = 16.7 ms
(1 cycle, 60 Hz)
88
A
tp = 10 ms
(1/2 cycle, 50 Hz)
100
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
50
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500 mA
dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
20
A/µs
Non Repetitive
100
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
Symbol
VDRM
VRRM
September 2001 - Ed: 1A
°C
260
°C
T820 / T830-xxxW
Parameter
Repetitive peak off-state voltage
Tj = 125°C
- 40 to + 150
- 40 to + 125
Unit
600
700
800
600
700
800
V
1/5
T820-xxxW / T830-xxxW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°C/W
Rth(j-c)
Junction to case for A.C (360° conduction angle)
3.1
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=33Ω
Quadrant
Tj= 25°C
I-II-III
MAX
T820
T830
Unit
20
30
mA
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG =500mA
dlG/dt= 3Aµs
Tj= 25°C
I-II-III
TYP
2
µs
IH *
IT= 100mA
Tj= 25°C
MAX
Gate open
35
50
VTM *
ITM= 11A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
MAX
10
µA
Tj= 125°C
MAX
2
mA
dV/dt *
Linear slope up to
Gate open
VD=67%VDRM
Tj= 125°C
MIN
200
300
V/µs
(dV/dt)c *
(dI/dt)c = 4.5 A/ms (see note)
Tj= 125°C
MIN
10
20
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T820W / T830W triacs.
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T820-xxxW / T830-xxxW
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
180
O
= 180
8
= 120
= 90
6
= 60
4
Tcase (oC)
P (W)
P(W)
10
= 30
10
o
-90
-95
o
8
-100
o
6
Rth = 0 o C/W
o
2.5 C/W
o
5 C/W
7.5 o C/W
o
4
o
-105
-110
-115
2
2
0
0
1
2
3
4
5
6
7
Tamb ( C)
8
Fig. 3: RMS on-state current versus case temperature.
I
T(RMS)
-120
o
I T(RMS) (A)
-125
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 4: Thermal transient impedance junction to
case and junction to ambient versus pulse duration.
Zth/Rth
(A)
1
10
Zth(j-c)
8
= 180
o
0.1
6
Zth(j-a)
4
0.01
2
o
Tcase( C)
0
0
10
20
30
40
50
60
tp(s)
70
80
90 100 110 120 130
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 o C]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
100
2.6
o
Tj initial = 25 C
2.4
80
2.2
2.0
Igt
1.8
1.6
1.4
60
40
Ih
1.2
1.0
20
0.8
0.6
0.4
Number of cycles
Tj(oC)
-40
-20
0
20
40
60
80
100
120
140
0
1
10
100
1000
3/5
T820-xxxW / T830-xxxW
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp  10ms, and
corresponding value of I2t.
Fig. 8: On-state characteristics (maximum values).
I TSM (A). I2 t (A2 s)
I TM (A)
1000
1000
o
Tj initial = 25 C
I TSM
Tj initial
o
25 C
100
100
I2 t
10
Tj max
Tj max
Vto =0.9V
Rt =0.048
10
1
VTM (V)
tp(ms)
1
1
4/5
10
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
T820-xxxW / T830-xxxW
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
REF.
A
■
■
■
■
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L2
■
Millimeters
16.00 typ.
0.630 typ.
L3
28.60
30.60
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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