Mitsubishi M81706AFP High voltage half bridge driver Datasheet

MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81706AFP is high voltage Power MOSFET and IGBT
module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES
¡FLOATING SUPPLY VOLTAGE ................................. 600V
¡OUTPUT CURRENT ..................... +120mA/–250mA (min)
¡HALF BRIDGE DRIVER
¡UNDERVOLTAGE LOCKOUT
¡SOP-8 PACKAGE
APPLICATIONS
MOSFET and IGBT module inverter driver for PDP, HID
lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose.
1. VCC
8. VB
2. HIN
7. HO
3. LIN
6. VS
4. GND
5. LO
Outline:8P2S
BLOCK DIAGRAM
HV
LEVEL
SHIFT
VREG
HIN
2
3
7
HO
6
VS
1
VCC
5
LO
4
GND
R
S
PULSE
GEN
UV DETECT
FILTER
LIN
VB
RQ
INTER
LOCK
VREG/VCC
LEVEL
SHIFT
8
UV DETECT
FILTER
VREG/VCC
LEVEL
SHIFT
DELAY
Aug. 2009
1
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Symbol
VB
VS
VBS
VHO
VCC
VLO
VIN
Pd
Kq
Rth(j-c)
Tj
Topr
Tstg
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Test conditions
Ratings
–0.5 ~ 625
Unit
V
V
V
VB–25 ~ VB+0.5
–0.5 ~ 25
VS–0.5 ~ VB+0.5
VBS = VB–VS
V
V
V
V
–0.5 ~ 25
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
0.6
6.0
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
W
mW/°C
°C/W
°C
°C
50
–20 ~ 125
–20 ~ 100
–40 ~ 125
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VB
VS
VBS
VHO
VCC
VLO
VIN
Parameter
Test conditions
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
10
VS
VBS = VB–VS
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Min.
VS+10
0
HIN, LIN
Limits
Typ.
—
—
—
10
0
—
—
—
0
—
Max.
VS+20
500
Unit
V
V
20
VB
V
V
20
VCC
VCC
V
V
V
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
Package Power Dissipation Pd (W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
Temperature Ta (°C)
Aug. 2009
2
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.*
—
Max.
1.0
0.2
0.5
mA
Unit
IFS
Floating Supply Leakage Current
VB = VS = 600V
Min.
—
IBS
VBS Standby Current
HIN = LIN = 0V
—
ICC
VCC Standby Current
HIN = LIN = 0V
0.2
0.5
1.0
mA
VOH
High Level Output Voltage
IO = –20mA, LO, HO
13.6
14.2
—
V
VOL
Low Level Output Voltage
IO = 20mA, LO, HO
—
0.3
0.6
V
VIH
High Level Input Threshold Voltage
HIN, LIN
2.7
—
—
V
VIL
Low Level Input Threshold Voltage
HIN, LIN
—
—
0.8
V
IIH
High Level Input Bias Current
VIN = 5V
—
5
20
µA
IIL
Low Level Input Bias Current
VIN = 0V
—
—
2
µA
VBSuvr
VBS Supply UV Reset Voltage
8.0
8.9
9.8
V
VBSuvt
VBS Supply UV Trip Voltage
7.4
8.2
9.0
V
VBSuvh
VBS Supply UV Hysteresis Voltage
0.5
0.7
—
V
tVBSuv
VBS Supply UV Filter Time
—
7.5
—
µs
VCCuvr
VCC Supply UV Reset Voltage
8.0
8.9
9.8
V
VCCuvt
VCC Supply UV Trip Voltage
7.4
8.2
9.0
V
VCCuvh
VCC Supply UV Hysteresis Voltage
0.5
0.7
—
V
tVCCuv
VCC Supply UV Filter Time
—
7.5
—
µs
IOH
Output High Level Short Circuit Pulsed Current
VO = 0V, VIN = 5V, PW < 10µs
120
200
—
mA
IOL
Output Low Level Short Circuit Pulsed Current
VO = 15V, VIN = 0V, PW < 10µs
250
350
—
mA
ROH
Output High Level On Resistance
IO = –20mA, ROH = (VOH–VO)/IO
—
40
70
Ω
ROL
Output Low Level On Resistance
IO = 20mA, ROL = VO/IO
—
15
30
Ω
tdLH(HO)
High Side Turn-On Propagation Delay
CL = 1000pF between HO-VS
—
120
240
ns
tdHL(HO)
High Side Turn-Off Propagation Delay
CL = 1000pF between HO-VS
—
170
280
ns
trH
High Side Turn-On Rise Time
CL = 1000pF between HO-VS
—
130
220
ns
tfH
High Side Turn-Off Fall Time
CL = 1000pF between HO-VS
—
50
80
ns
tdLH(LO)
Low Side Turn-On Propagation Delay
CL = 1000pF between LO-GND
—
120
240
ns
tdHL(LO)
Low Side Turn-Off Propagation Delay
CL = 1000pF between LO-GND
—
170
280
ns
trL
Low Side Turn-On Rise Time
CL = 1000pF between LO-GND
—
130
220
ns
tfL
Low Side Turn-Off Fall Time
CL = 1000pF between LO-GND
—
50
80
ns
∆tdLH
Delay Matching, High Side and Low Side Turn-On
|tdLH(HO)–tdLH(LO)|
—
0
30
ns
∆tdHL
Delay Matching, High Side and Low Side Turn-Off
|tdHL(HO)–tdHL(LO)|
—
0
30
ns
µA
* Typ. is not specified.
Aug. 2009
3
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
FUNCTION TABLE
HIN
LIN
VBS UV
VCC UV
HO
LO
H→L
H→L
L→H
L→H
X
X
H→L
L→H
L
H
L
H
L
H
X
X
H
H
H
H
L
L
H
H
H
H
H
H
H
H
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
H
L
L
Behavioral state
LO = HO = Low
LO = High
HO = High
LO = HO = Low
HO = Low, VBS UV tripped
LO = High, VBS UV tripped
LO = Low, VCC UV tripped
HO = LO = Low, VCC UV tripped
Note1 : “L” state of VBS UV, VCC UV means that UV trip voltage.
2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
3 : X(HIN) : L→H or H→L.X(LIN) : H or L.
4 : Output signal (HO) is triggered by the edge of input signal.
HIN
HO
TIMING DIAGRAM
1. Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
HIN
LIN
HO
LO
Aug. 2009
4
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
2. VCC (VBS) Supply Under Voltage Lockout Timing Diagram
If VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal
becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal LO becomes “H”.
VCCuvh
VCC
VCCuvr
VCCuvt
tVCCuv
LO
LIN
It VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal
becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal
is “H”.
VBS(H)
LIN(L)
VCCuvh
VCC
VCCuvr
VCCuvt
tVCCuv
HO
HIN
If VBS supply voltage drops below UV trip voltage (VBSuvt = VBSuvr–VBSuvh) for VBS supply UV filter time, output signal
becomes “L”. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following
“H” edge of input signal.
VBSuvh
VBS
VBSuvr
VBSuvt
tVBSuv
HO
HIN
Aug. 2009
5
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
3. Allowable Supply Voltage Transient
It is recommended to supply VCC firstly and supply VBS secondly. In the case of shutting off supply voltage, please shut
off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises
rapidly, output signal (HO or LO) may be malfunction.
Consideration
As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: VS).
Therefore, pin insulation space distance should be taken enough.
PACKAGE OUTLINE
e
8
b2
E
Recommended Mount Pad
1
Symbol
F
4
A
D
G
b
x
M
A1
A2
e
y
L
L1
HE
e1
I2
5
c
z
Z1
Detail G
Detail F
A
A1
A2
b
c
D
E
e
HE
L
L1
z
Z1
x
y
b2
e1
I2
Dimension in Millimeters
Min
Nom
Max
–
–
1.9
0.05
–
–
–
1.5
–
0.35
0.4
0.5
0.13
0.15
0.2
4.8
5.0
5.2
4.2
4.4
4.6
–
1.27
–
5.9
6.2
6.5
0.2
0.4
0.6
–
0.9
–
–
0.595
–
–
–
0.745
–
–
0.25
–
–
0.1
0°
–
10°
–
0.76
–
–
5.72
–
1.27
–
–
Aug. 2009
6
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