NTE NTE6085 Silicon dual schottky rectifier Datasheet

NTE6085
Silicon Dual Schottky Rectifier
Description:
The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky
Barrier principle with a platinum barrier metal.
Features:
D Plastic Package
D Metal to Silicon Rectifier, Majority Carrier Conduction
D Low Power Loss, High Efficiency
D High Current Capability, Low VT
D High Surge Capability
Applications:
D For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection
Absolute Maximum Ratings:
Maximum Recurred Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.5V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Maximum Average Rectified Forward Current (TC = +105°C), IF(AV)
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Forward Surge Current, IFSM
(8.3ms, Single Half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . 150A
Peak Repetitive Reverse Surge Current (2µs, 1kHz), IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Repetitive Reverse Current (2µs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W
Lead Temperature (During Soldering, .250” (6.35mm) from case, 10sec max), TL . . . . . . . . +250°C
Electrical Characteristics (Per Diode Leg): (Note 1)
Parameter
Instantaneous Forward Voltage
Instantaneous Reverse Current
Symbol
vF
iR
Test Conditions
Min
Typ
Max
Unit
iF = 7.5A, TC = +125°C
–
–
0.57
V
iF = 15A, TC = +125°C
–
–
0.72
V
iF = 15A, TC = +125°C
–
–
0.84
V
VR = 45V, TC = +125°C
–
–
15
mA
VR = 45V, TC = +25°C
–
–
0.1
mA
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.147 (3.75) Dia Max
.110 (2.79)
.185 (4.7)
.392
(9.95)
.054 (1.38)
.245 (6.22)
.269
(6.83)
Max
K
.6.08
(15.42)
Max
.040
(1.02)
A
K
A
.500
(12.7)
Min
.100 (2.54)
.018 (0.48)
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