Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 IRHNA7160 IRHNA8160 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.045Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA7160 IRHNA8160 BV DSS 100V 100V RDS(on) 0.045Ω 0.045Ω ID 51A 51A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Pre-Radiation Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Package Mounting Surface Temperature Weight To Order IRHNA7160, IRHNA8160 51 32.5 204 300 2.0 ±20 500 51 30 5.5 -55 to 150 Units A W W/K V mJ A mJ V/ns oC 300 (for 5 sec.) 3.3 (typical) g Previous Datasheet Index Next Data Sheet IRHNA7160, IRHNA8160 Devices Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units 100 — — 0.13 — — — — 2.0 12 — — — — — — — — 0.045 0.050 4.0 — 25 250 V V/°C IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 8.7 100 -100 224 50 90 65 265 240 180 — LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6000 1700 280 — — — Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25°C, ID = 1.0 mA nC VGS = 12V, ID =32.5 A VGS = 12V, ID = 51A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 32.5A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 51A VDS = Max. Rating x 0.5 ns VDD = 50V, ID =51 A, RG = 2.35Ω Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nH pF Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = 25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — 51 204 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 51A, VGS = 0V Tj = 25°C, IF = 51A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. — — — — — — 1.8 570 5.8 V ns µC Thermal Resistance Parameter Min. Typ. Max. Units RthJC Junction-to-Case — — 0.42 RthJ-PCB Junction-to-PC board — TBD — Test Conditions K/W To Order soldered to a copper-clad PC board Previous Datasheet Index Next Data Sheet IRHNA7160, IRHNA8160 Devices Radiation Characteristics Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHNA7160. The values in Table 1 will be met for either of the two low dose rate test circuits that are Table 1. Low Dose Rate 100K Rads (Si) 1000K Rads (Si) Units min. VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. IRHNA7160 IRHNA8160 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. max. min. max. 100 — 2.0 4.0 — 100 — -100 — 25 — 0.045 100 1.25 — — — — — 4.5 100 -100 50 0.062 — 1.8 — 1.8 Test Conditions VGS = 0V, ID = 1.0 mA VGS = VDS, ID = 1.0 mA VGS = 20V nA VGS = -20V µA VDS = 0.8 x Max Rating, VGS = 0V Ω VGS = 12V, ID =32.5A V V TC = 25°C, IS = 51A,VGS = 0V 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min. Typ. Max. Units Test Conditions — — 80 — — 80 V Applied drain-to-source voltage during gamma-dot — 140 — — 140 — A Peak radiation induced photo-current — — 800 — — 160 A/µsec Rate of rise of photo-current 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Drain-to-Source Voltage IPP di/dt L1 Table 3. Single Event Effects Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS 100 V Ni 28 1 x 105 ~41 100 -5 To Order Previous Datasheet Index Next Data Sheet IRHNA7160, IRHNA8160 Devices Radiation Characteristics Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 25V, Starting T J = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 51A, VGS = 12V, 25 ≤ RG ≤ 200Ω ISD ≤ 51A, di/dt ≤ 170 A/µs, VDD ≤ BV DSS, T J ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — SMD2 LEADASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE NOTES: 1 DIMENSIONINGANDTOLERANCINGPERANSIY14.5M-1982 2.CONTROLLING DIMENSION: INCH 3. DIMENSIONSARESHOWNINMILLIMETERS(INCHES) 4 DIMENSIONINCLUDESMETALLIZATIONFLASH 5 DIMENSIONDOESNOTINCLUDEMETALLIZATIONFLASH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/96 To Order