MOTOROLA MCR218FP Silicon controlled rectifier Datasheet

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SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
ISOLATED SCRs
8 AMPERES RMS
50 thru 800 VOLTS
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• 80 A Surge Current Capability
• Insulated Package Simplifies Mounting
G
A
CASE 221C-02
STYLE 2
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open)
MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
MCR218-10FP
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
p 20%)
Value
VDRM
VRRM
Unit
Volts
50
200
400
600
800
IT(RMS)
8
Amps
ITSM
80
Amps
I2t
26
A2s
PGM
5
Watts
PG(AV)
0.5
Watt
IGM
2
Amps
V(ISO)
1500
Volts
TJ
–40 to +125
°C
Tstg
–40 to +125
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
2
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Min
Typ
Max
Unit
—
—
—
—
10
2
µA
mA
IRRM
—
—
2
mA
VTM
—
1
1.8
Volts
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
IGT
—
10
25
mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
VGT
—
—
1.5
Volts
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
—
—
Volts
Holding Current
(Anode Voltage = 12 Vdc)
IH
—
16
30
mA
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
tgt
—
1.5
—
µs
—
—
15
35
—
—
—
100
—
Peak Forward Blocking Current
(VD = Rated VDRM, Gate Open)
Symbol
IDRM
TJ = 25°C
TJ = 125°C
Peak Reverse Blocking Current
(VR = Rated VRRM, TJ = 125°C)
Forward “On” Voltage(1)
(ITM = 16 A Peak)
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A)
µs
tq
TJ = 25°C
TJ = 125°C
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle
dv/dt
V/µs
p 2%.
125
115
α
α = CONDUCTION ANGLE
105
95
dc
85
α = 30°
75
0
1
90° 120°
60°
2
3
4
180°
5
6
7
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
2
8
P(AV) , AVERAGE ON-STATE POWER DISSIPATION
(WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
TYPICAL CHARACTERISTICS
15
12
α
α = CONDUCTION ANGLE
9
120°
60°
6
dc
180°
90°
α = 30°
3
0
0
1
2
3
4
5
6
7
IT(AV), AVG. ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
Motorola Thyristor Device Data
8
80
I TSM , PEAK SURGE CURRENT (AMP)
100
70
TJ = 25°C
50
125°C
30
20
i F , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)
10
7
1 CYCLE
75
70
65
TC = 85°C
f = 60 Hz
60
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
55
1
5
2
3
4
6
8
10
NUMBER OF CYCLES
3
Figure 4. Maximum Non-Repetitive Surge Current
2
+I
1
0.7
0.5
REVERSE
BLOCKING
REGION
0.3
–V
0.2
IT
VT
IH
IDRM
IRRM
VRRM
0.1
0.4
1.2
2
2.8
3.6
4.4
5.2
6
REVERSE
AVALANCHE
REGION
FORWARD
BREAKOVER
POINT
–I
VDRM
FORWARD
BLOCKING
REGION
+V
v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 3. Maximum On-State Characteristics
Figure 5. Characteristics and Symbols
1
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
Figure 6. Thermal Response
Motorola Thyristor Device Data
3
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
2
VD = 12 V
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
100
120
140
2
VD = 12 V
1.6
1.2
0.8
0.4
0
–60
–40
–20
TJ, JUNCTION TEMPERATURE (°C)
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Current versus Temperature
Figure 8. Gate Trigger Voltage versus Temperature
IH , HOLDING CURRENT (NORMALIZED)
2
VD = 12 V
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Holding Current versus Temperature
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
–B–
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
SEATING
PLANE
C
S
P
N
E
A
Q
H
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
1 2 3
–Y–
K
Z
J
L
G
R
D
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
CASE 221C-02
Motorola Thyristor Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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Motorola Thyristor Device Data
*MCR218FP/D*
MCR218FP/D
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