Siemens BC847B Npn silicon af transistors (for af input stages and driver applications high current gain) Datasheet

NPN Silicon AF Transistors
BC 846 ... BC 850
Features
●
●
●
●
●
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
Type
Marking
Ordering Code
(tape and reel)
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
1)For
Pin Configuration
1
2
3
B
E
C
Package1)
SOT-23
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 846 ... BC 850
Maximum Ratings
Parameter
Symbol
Unit
BC 846
Values
BC 847
BC 850
BC 848
BC 849
Collector-emitter voltage
VCE0
65
45
30
V
Collector-base voltage
VCB0
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEB0
6
6
5
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Peak emitter current
IEM
200
Total power dissipation, TS = 71 ˚C
Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
mA
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Rth JA
≤
310
Junction - soldering point
Rth JS
≤
240
1)Package
mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
K/W
BC 846 ... BC 850
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CE0
Collector-base breakdown voltage
IC = 10 µA
BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CB0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CES
Emitter-base breakdown voltage
IE = 1 µA
BC 846, BC 847
BC 848, BC 849, BC 850
V(BR)EB0
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
DC current gain
IC = 10 µA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
IC = 2 mA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
hFE
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
1)Pulse
test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
V
65
45
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
6
5
–
–
–
–
–
–
–
–
15
5
nA
µA
–
–
–
–
140
250
480
–
–
–
110
200
420
180
290
520
220
450
800
–
–
90
200
250
600
–
–
700
900
–
–
580
–
660
–
700
770
mV
VCEsat
BC 846 ... BC 850
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
–
250
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
3
–
pF
Input capacitance
VCB = 0.5 V, f = 1 MHz
Cibo
–
8
–
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h11e
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h12e
Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h21e
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h22e
Noise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz
BC 849
BC 850
BC 849
f = 1 kHz, ∆ f = 200 Hz
BC 850
F
Equivalent noise voltage
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz
BC 850
Vn
Semiconductor Group
kΩ
–
–
–
–
–
–
10– 4
–
–
–
1.5
2.0
3.0
–
–
–
–
–
–
–
200
330
600
–
–
–
µS
–
–
–
4
2.7
4.5
8.7
18
30
60
–
–
–
dB
–
–
–
–
1.4
1.4
1.2
1.0
4
3
4
4
–
–
0.135
µV
BC 846 ... BC 850
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
5
BC 846 ... BC 850
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
DC current gain hFE = f (IC)
VCE = 5 V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 846 ... BC 850
h parameter he = f (IC) normalized
VCE = 5 V
h parameter he = f (VCE) normalized
IC = 2 mA
Noise figure F = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure F = f (f)
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
Semiconductor Group
7
BC 846 ... BC 850
Noise figure F = f (IC)
VCE = 5 V, f = 120 Hz
Noise figure F = f (IC)
VCE = 5 V, f = 1 kHz
Noise figure F = f (IC)
VCE = 5 V, f = 10 kHz
Semiconductor Group
8
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