isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 3.68 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF610A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX UNIT 200 2 V 4 V VGS= 10V; ID=1.65A 1.5 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 VDS= 160V; VGS= 0; Tj= 125℃ 10 100 μA VSD Forward On-Voltage IS= 3.3A; VGS= 0 1.5 V Ciss Input Capacitance 210 pF Coss Output Capacitance 44 pF Crss Reverse Transfer Capacitance 18 pF MAX UNIT 30 ns 30 ns Turn-off Delay Time 50 ns Fall Time 35 ns VDS=25V,VGS=0V, F=1.0MHz ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER CONDITIONS Turn-on Delay Time Rise Time VDD=100V,ID=3.3A RG=24Ω MIN TYP · isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn